0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SMDJ33CA

SMDJ33CA

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    SMC(DO-214AB)

  • 描述:

    功率:3000W

  • 数据手册
  • 价格&库存
SMDJ33CA 数据手册
SMDJ5.0(C)A -SMDJ220(C)A Product specification SMDJ5.0(C)A -SMDJ220(C)A Features Mechanical Data  For surface mounted applications in order to optimize board space  Low profile package  Built-in strain relief  Glass passivated junction  Low inductance  Excellent clamping capability  3000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01%  Fast response time  Typical IR less than 1μA above 10V  High Temperature soldering: 260℃/10 seconds at terminals  Plastic package has underwriters laboratory flammability 94V-0  Meets MSL level 1, per J-STD-020  Safety certification: UL  IEC61000-4-2 ESD 30KV Air, 30KV contact compliance  Case: JEDEC DO-214AB. Molded plastic over glass passivated junction  Terminal: Tin plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode except bi-directional models  Standard Packaging: 16mm tape (EIA STD RS-481)  Weight: 0.28g Applications  I/O interface  AC/DC power supply  Low frequency signal transmission line (RS232, RS485, etc.) Reference News PACKAGE OUTLINE PIN CONFIGURATION SMC(DO-214AB) Unipolar SMC(DO-214AB) Bipolar Copyright© Msksemi Incorporated www.msksemi.com SMDJ5.0(C)A -SMDJ220(C)A Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 3000 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 6.5 Watts IFSM 300 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 15 ℃/W Typical thermal resistance junction to ambient RθJA 75 ℃/W Steady state power dissipation at TA=50℃ (Fig.5) Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Range. Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2. 2. Mounted on 8.0mm×8.0mm copper pads to each terminal. 3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minutes maximum. Electrical Characteristics (TA=25℃) Part Number Unidirectional Bidirectional Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Revers e Leakag e @ VRWM UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) SMDJ5.0A SMDJ5.0CA RDE DDE 5.0 6.40~7.00 10 9.2 326.1 800 SMDJ6.0A SMDJ6.0CA RDG DDG 6.0 6.67~7.37 10 10.3 291.3 800 SMDJ6.5A SMDJ6.5CA RDK DDK 6.5 7.22~7.98 10 11.2 267.9 500 SMDJ7.0A SMDJ7.0CA PDM DDM 7.0 7.78~8.60 10 12.0 250.0 200 SMDJ7.5A SMDJ7.5CA PDP DDP 7.5 8.33~9.21 1 12.9 232.6 100 SMDJ8.0A SMDJ8.0CA PDR DDR 8.0 8.89~9.83 1 13.6 220.6 50 SMDJ8.5A SMDJ8.5CA PDT DDT 8.5 9.44~10.40 1 14.4 208.3 20 SMDJ9.0A SMDJ9.0CA PDV DDV 9.0 10.00~11.10 1 15.4 194.8 10 SMDJ10A SMDJ10CA PDX DDX 10.0 11.10~12.30 1 17.0 176.5 5 SMDJ11A SMDJ11CA PDZ DDZ 11.0 12.20~13.50 1 18.2 164.8 2 SMDJ12A SMDJ12CA PEE DEE 12.0 13.30~14.70 1 19.9 150.8 2 SMDJ13A SMDJ13CA PEG DEG 13.0 14.40~15.90 1 21.5 139.5 2 SMDJ14A SMDJ14CA PEK DEK 14.0 15.60~17.20 1 23.2 129.3 2 SMDJ15A SMDJ15CA PEM DEM 15.0 16.70~18.50 1 24.4 123.0 2 SMDJ16A SMDJ16CA PEP DEP 16.0 17.80~19.70 1 26.0 115.4 2 SMDJ17A SMDJ17CA PER DER 17.0 18.90~20.90 1 27.6 108.7 2 SMDJ18A SMDJ18CA PET DET 18.0 20.00~22.10 1 29.2 102.7 2 SMDJ20A SMDJ20CA PEV DEV 20.0 22.20~24.50 1 32.4 92.6 2 SMDJ22A SMDJ22CA PEX DEX 22.0 24.40~26.90 1 35.5 84.5 2 SMDJ24A SMDJ24CA PEZ DEZ 24.0 26.70~29.50 1 38.9 77.1 2 Copyright© Msksemi Incorporated www.msksemi.com SMDJ5.0(C)A -SMDJ220(C)A Part Number Unidirectional Bidirectional Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Revers e Leakag e @ VRWM UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) SMDJ26A SMDJ26CA PFE DFE 26.0 28.90~31.90 1 42.1 71.3 2 SMDJ28A SMDJ28CA PFG DFG 28.0 31.10~34.40 1 45.4 66.1 2 SMDJ30A SMDJ30CA PFK DFK 30.0 33.30~36.80 1 48.4 62.0 2 SMDJ33A SMDJ33CA PFM DFM 33.0 36.70~40.60 1 53.3 56.3 2 SMDJ36A SMDJ36CA PFP DFP 36.0 40.00~44.20 1 58.1 51.6 2 SMDJ40A SMDJ40CA PFR DFR 40.0 44.40~49.10 1 64.5 46.5 2 SMDJ43A SMDJ43CA PFT DFT 43.0 47.80~52.80 1 69.4 43.2 2 SMDJ45A SMDJ45CA PFV DFV 45.0 50.00~55.30 1 72.7 41.3 2 SMDJ48A SMDJ48CA PFX DFX 48.0 53.30~58.90 1 77.4 38.8 2 SMDJ51A SMDJ51CA PFZ DFZ 51.0 56.70~62.70 1 82.4 36.4 2 SMDJ54A SMDJ54CA PGE DGE 54.0 60.00~66.30 1 87.1 34.4 2 SMDJ58A SMDJ58CA PGG DGG 58.0 64.40~71.20 1 93.6 32.1 2 SMDJ60A SMDJ60CA PGK DGK 60.0 66.70~73.70 1 96.8 31.0 2 SMDJ64A SMDJ64CA PGM DGM 64.0 71.10~78.60 1 103.0 29.1 2 SMDJ70A SMDJ70CA PGP DGP 70.0 77.80~86.00 1 113.0 26.5 2 SMDJ75A SMDJ75CA PGR DGR 75.0 83.30~92.10 1 121.0 24.8 2 SMDJ78A SMDJ78CA PGT DGT 78.0 86.70~95.80 1 126.0 23.8 2 SMDJ85A SMDJ85CA PGV DGV 85.0 94.40~104.00 1 137.0 21.9 2 SMDJ90A SMDJ90CA PGX DGX 90.0 100.00~111.00 1 146.0 20.5 2 SMDJ100A SMDJ100CA PGZ DGZ 100.0 111.00~123.00 1 162.0 18.5 2 SMDJ110A SMDJ110CA PHE DHE 110.0 122.00~135.00 1 177.0 16.9 2 SMDJ120A SMDJ120CA PHG DHG 120.0 133.00~147.00 1 193.0 15.5 2 SMDJ130A SMDJ130CA PHK DHK 130.0 144.00~159.00 1 209.0 14.4 2 SMDJ150A SMDJ150CA PHM DHM 150.0 167.00~185.00 1 243.0 12.3 2 SMDJ160A SMDJ160CA PHP DHP 160.0 178.00~197.00 1 259.0 11.6 2 SMDJ170A SMDJ170CA PHR DHR 170.0 189.00~209.00 1 275.0 10.9 2 SMDJ180A SMDJ180CA HHT IHT 180.0 201.00~222.00 1 292.0 10.3 2 SMDJ190A SMDJ190CA HHV IHV 190.0 211.00~233.00 1 308.0 9.7 2 SMDJ200A SMDJ200CA HHX IHX 200.0 224.00~247.00 1 324.0 9.3 2 SMDJ210A SMDJ210CA HHZ IHZ 210.0 237.00~263.00 1 340.0 8.8 2 SMDJ220A SMDJ220CA HIE IIE 220.0 246.00~272.00 1 356.0 8.4 2 Copyright© Msksemi Incorporated www.msksemi.com SMDJ5.0(C)A -SMDJ220(C)A Ratings and Characteristic Curves (TA=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (P PP ) or Current (I PP ) Derating in Percentage % PPPM - Peak Pulse Power (kW) 1000 100 10 1 0.31×0.31 ″(8.0×8.0mm) Copper Pad Area 0.1 0.1 1 100 10 100 80 60 40 20 0 0 1000 Figure 3. Pulse Waveform 1000 Bi-directional 10 td 1 2.0 t-Time (ms) Copyright© Msksemi Incorporated 175 100 10/1000µs Waveform as defined by R.E.A 1.0 150 Uni-directional Cj (pF) IPPM - Peak Pulse Current, %I RSM 50 0 125 10000 Half Value I PPM (IPPM /2) 0 100 100000 Peak Value I PPM 100 75 Figure 4. Typical Junction Capacitance TJ=25℃ Pulse Width(t d) is defined as the point where the peak current decays to 50% of I PPM tr=10µs 50 TA-Ambient Temperature ( ℃) td-Pulse Width (µs) 150 25 3.0 4.0 Measured at 1MHz, 100mV, 0V bias 1 10 100 VRWM -Reverse Stand-Off Voltage (V) 1000 www.msksemi.com SMDJ5.0(C)A -SMDJ220(C)A Figure 5. Steady State Power Dissipation Derating Curve Surge Current Uni-Directional Only IFSM - Peak Forward Surve Current (A) PM(AV), Steady State Power Dissipation (W) 7 Figure 6. Maximum Non-Repetitive Forward 6 5 4 3 2 1 0 0 25 50 75 100 125 150 350 300 250 200 150 100 50 175 0 1 10 Number of Cycles at 60Hz TA-Ambient Temperature ( ℃) 100 Recommended Soldering Conditions Reflow Soldering Critical Zone TL to TP tP TP Ramp-up Temperature TL tL TS max TS min Ramp-down tS Preheat 25 t 25℃ to Peak Time Copyright© Msksemi Incorporated www.msksemi.com SMDJ5.0(C)A -SMDJ220(C)A Recommended Conditions Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (tS) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) 20-40 seconds Ramp-down Rate 6℃/second max. Time 25℃ to Peak Temperature 8 minutes max. Dimensions (SMC/DO-214AB) Product: Symbol Cathode Band D1 D L H1 H d T1 T 3.20mm Pad: 1.75mm 4.69mm Copyright© Msksemi Incorporated 1.75mm Millimeters Inches Min. Max. Min. Max. L 6.60 7.11 0. 0. D 5.59 6.22 2600. 2800. D1 2.90 3.20 2200. 2450. T 7.75 8.13 1140. 1260. T1 0.76 1.52 3050. 3200. d - 0.203 030 - 0600. H 2.20 2.80 0.087 0080. H1 2.06 2.62 0.079 0.103 www.msksemi.com SMDJ5.0(C)A -SMDJ220(C)A Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. Copyright© Msksemi Incorporated www.msksemi.com
SMDJ33CA 价格&库存

很抱歉,暂时无法提供与“SMDJ33CA”相匹配的价格&库存,您可以联系我们找货

免费人工找货