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P4SMA16CA(MS)

P4SMA16CA(MS)

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    SMA(DO-214AC)

  • 描述:

  • 数据手册
  • 价格&库存
P4SMA16CA(MS) 数据手册
P4SMAXXXA(CA)(MS) Product specification P4SMAXXXA(CA)(MS) Mechanical Data Features    400W Peak Pulse Power Dissipation Case : SMA Molded plastic body 6.8V - 550V Standoff Voltages Terminals : Solderable per MIL-STD-750,Method 2026 Uni- and Bi-Directional Versions Available Excellent Clamping Capability    Glass Passivated Die Construction  Plastic Material: UL Flammability Classification Rating 94V-0 Low inductance Polarity Indicator: Cathode Band(Note:Bi-directional deviced have no polarity indicator) Weight : 0.00095ounce, 0.027grams Fast Response Time Reference News PACKAGE OUTLINE PIN CONFIGURATION Marking Information ***A S Unipolar J ***C Bipolar Copyright© Msksemi Incorporated www.msksemi.com P4SMAXXXA(CA)(MS) Maximum Ratings And Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. PPPM 400 W Peak Forward Surge Current (Note 3,Fig4 ) IFSM 60 A Peak Pulse Current on 10/1000 us waveform (Note 1) IPPM Peak Pulse Power Dissipation on TA=25°C (Note 1,2,4, Fig1) VESD1 VESD2 Contact ESD Voltage per IEC6100-4-2 Air Typical Thermal Resistance Junction to Ambient(Note 2) ±30 kV ±30 RθJA Operating Junction Temperature and Storage Temperature Range) A see Table 1 100 ℃/W ℃ -55 ~ +150 Tj, Tstg NOTES: 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25℃ per Fig. 2. 2. Mounted on 5mm2 copper pads to each terminal. 3. Peak Forward Surge Current : 8.3ms single half sine-wave Superimposed on rated load (JEDEC method). 4. Peak pulse power waveform is 10/1000μS . Electrical Characteristics (TA=25℃) Part Number Unidirectional Bidirectional Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Reverse Pulse Leakage Current @ VRWM UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) P4SMA6.8A P4SMA6.8CA 6V8A 6V8C 5.80 6.45~7.14 10 10.5 39.0 1000 P4SMA7.5A P4SMA7.5CA 7V5A 7V5C 6.40 7.13~7.88 10 11.3 36.3 500 P4SMA8.2A P4SMA8.2CA 8V2A 8V2C 7.02 7.79~8.61 10 12.1 33.9 200 P4SMA9.1A P4SMA9.1CA 9V1A 9V1C 7.78 8.65~9.55 1 13.4 30.6 50 P4SMA10A P4SMA10CA 10A 10C 8.55 9.50~10.50 1 14.5 28.3 10 P4SMA11A P4SMA11CA 11A 11C 9.40 10.50~11.60 1 15.6 26.3 5 P4SMA12A P4SMA12CA 12A 12C 10.20 11.40~12.60 1 16.7 24.6 5 P4SMA13A P4SMA13CA 13A 13C 11.10 12.40~13.70 1 18.2 22.5 1 P4SMA15A P4SMA15CA 15A 15C 12.80 14.30~15.80 1 21.2 19.3 1 P4SMA16A P4SMA16CA 16A 16C 13.60 15.20~16.80 1 22.5 18.2 1 P4SMA18A P4SMA18CA 18A 18C 15.30 17.10~18.90 1 25.2 16.1 1 P4SMA20A P4SMA20CA 20A 20C 17.10 19.00~21.00 1 27.7 14.8 1 P4SMA22A P4SMA22CA 22A 22C 18.80 20.90~23.10 1 30.6 13.4 1 P4SMA24A P4SMA24CA 24A 24C 20.50 22.80~25.20 1 33.2 12.3 1 Copyright© Msksemi Incorporated www.msksemi.com P4SMAXXXA(CA)(MS) Part Number Unidirectional Bidirectional Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Reverse Pulse Leakage Current @ VRWM UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) P4SMA27A P4SMA27CA 27A 27C 23.10 25.70~28.40 1 37.5 10.9 1 P4SMA30A P4SMA30CA 30A 30C 25.60 28.50~31.50 1 41.4 9.9 1 P4SMA33A P4SMA33CA 33A 33C 28.20 31.40~34.70 1 45.7 9.0 1 P4SMA36A P4SMA36CA 36A 36C 30.80 34.20~37.80 1 49.9 8.2 1 P4SMA39A P4SMA39CA 39A 39C 33.30 37.10~41.00 1 53.9 7.6 1 P4SMA43A P4SMA43CA 43A 43C 36.80 40.90~45.20 1 59.3 6.9 1 P4SMA47A P4SMA47CA 47A 47C 40.20 44.70~49.40 1 64.8 6.3 1 P4SMA51A P4SMA51CA 51A 51C 43.60 48.50~53.60 1 70.1 5.8 1 P4SMA56A P4SMA56CA 56A 56C 47.80 53.20~58.80 1 77.0 5.3 1 P4SMA62A P4SMA62CA 62A 62C 53.00 58.90~65.10 1 85.0 4.8 1 P4SMA68A P4SMA68CA 68A 68C 58.10 64.60~71.40 1 92.0 4.5 1 P4SMA75A P4SMA75CA 75A 75C 64.10 71.30~78.80 1 103.0 4.0 1 P4SMA82A P4SMA82CA 82A 82C 70.10 77.90~86.10 1 113.0 3.6 1 P4SMA91A P4SMA91CA 91A 91C 77.80 86.50~95.50 1 125.0 3.3 1 P4SMA100A P4SMA100CA 100A 100C 85.50 95.00~105.00 1 137.0 3.0 1 P4SMA110A P4SMA110CA 110A 110C 94.00 105.00~116.00 1 152.0 2.7 1 P4SMA120A P4SMA120CA 120A 120C 102.00 114.00~126.00 1 165.0 2.5 1 P4SMA130A P4SMA130CA 130A 130C 111.00 124.00~137.0 1 179.0 2.3 1 P4SMA150A P4SMA150CA 150A 150C 128.00 143.00~158.0 1 207.0 2.0 1 P4SMA160A P4SMA160CA 160A 160C 136.00 152.00~168.0 1 219.0 1.9 1 P4SMA170A P4SMA170CA 170A 170C 145.00 162.00~179.0 1 234.0 1.8 1 P4SMA180A P4SMA180CA 180A 180C 154.00 171.00~189.0 1 246.0 1.7 1 P4SMA200A P4SMA200CA 200A 200C 171.00 190.00~210.0 1 274.0 1.5 1 P4SMA220A P4SMA220CA 220A 220C 185.00 209.00~231.0 1 328.0 1.3 1 P4SMA250A P4SMA250CA 250A 250C 214.00 237.00~263.0 1 344.0 1.2 1 P4SMA300A P4SMA300CA 300A 300C 256.00 285.00~315.0 1 414.0 1.0 1 P4SMA350A P4SMA350CA 350A 350C 300.00 332.00~368.0 1 482.0 0.85 1 P4SMA400A P4SMA400CA 400A 400C 342.00 380.00~420.0 1 548.0 0.75 1 P4SMA440A P4SMA440CA 440A 440C 376.00 418.00~462.0 1 602.0 0.68 1 P4SMA480A P4SMA480CA 480A 480C 408.00 456.00~504.0 1 658.0 0.61 1 P4SMA510A P4SMA510CA 510A 510C 434.00 485.00~535.0 1 698.0 0.57 1 P4SMA530A P4SMA530CA 530A 530C 450.00 503.50~556.5 1 725.0 0.55 1 P4SMA540A P4SMA540CA 540A 540C 459.00 513.00~567.0 1 740.0 0.54 1 P4SMA550A P4SMA550CA 550A 550C 467.00 522.50~577.5 1 760.0 0.52 1 P4SMA600A P4SMA600CA 600A 600C 510.00 570.00~630.0 1 828.0 0.48 1 Copyright© Msksemi Incorporated www.msksemi.com P4SMAXXXA(CA)(MS) Ratings and Characteristic Curves (T A=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (P PP ) or Current (I PP ) Derating in Percentage % PPPM - Peak Pulse Power (kW) 10 1 0.2×0.2 ″(5.0×5.0mm) Copper Pad Area 0.1 1 10 100 100 80 60 40 20 0 1000 0 td-Pulse Width (µs) 75 100 125 150 175 Figure 4. Typical Junction Capacitance 10000 150 TJ=25℃ Pulse Width(t d) is defined as the point where the peak current decays to 50% of I PPM tr=10µs Bi-directional V=0V 1000 Uni-directional V=0V Peak Value I PPM 100 Cj (pF) IPPM - Peak Pulse Current, %I RSM 50 TA-Ambient Temperature ( ℃) Figure 3. Pulse Waveform Half Value I PPM (IPPM /2) Uni-directional @V R 100 50 10/1000µs Waveform as defined by R.E.A 10 td 0 0 Bi-directional @V 1 1.0 2.0 3.0 1 4.0 3.0 2.4 1.8 1.2 0.6 0 50 75 100 125 TA-Ambient Temperature ( ℃) Copyright© Msksemi Incorporated 100 1000 Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only IFSM - Peak Forward Surve Current (A) 3.6 25 10 VBR -Reverse Breakdown Voltage (V) Figure 5. Steady State Power Dissipation Derating Curve 0 R TJ=25℃ f=1.0MHz Vsig=50mVp-p t-Time (ms) PM(AV), Steady State Power Dissipation (W) 25 150 175 45 40 35 30 25 20 15 10 5 0 1 10 100 Number of Cycles at 60Hz www.msksemi.com P4SMAXXXA(CA)(MS) Recommended Soldering Conditions Reflow Soldering Critical Zone TL to TP tP TP Ramp-up TL tL Temperature TS max TS min Ramp-down tS Preheat 25 t 25℃ to Peak Time Recommended Conditions Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (tS) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate Time 25℃ to Peak Temperature Copyright© Msksemi Incorporated 20-40 seconds 6℃/second max. 8 minutes max. www.msksemi.com P4SMAXXXA(CA)(MS) Ratings and Characteristic Curves TA =25°C unless otherwise noted Fig.1 Peak Pulse Power Rating Curve Fig.2 Forward Current Derating Curve 100 ulse.Wavefom PEAK PULSE POWER(PPP)OR CURRENT(IPP) DERATINGIN PERCENTAGE% Non-Repetive e Shown in Figure.3 PPPM,PEAK PULSE FORWARD ,kW TA=25°C 10 1.0 Mounted o 5.0m m Copper Lann Areas d 0.1 100 80 60 40 20 0 0.1 10 1 100 1000 25 10000 td,PULSE WIDTH ,us Pulse Width (td) is Defined as the Point where the Peak. Ippm,Peak Pulse Current (%) Value Current Decayst to 50% of Ipp Ippm 80 Half Value-Ipp/2 60 10/1000usec Waveform as Defined bye R.E.A. 40 20 0 0 1.0 2.0 T,TIME,ms Copyright© Msksemi Incorporated 3.0 4.0 IFSM,PEAK FORWARD SURGE CURRENT, AMPERES TA=25°C Peak k 100 125 150 175 Fig.4 Maximum Non-Repetitive Peak Forward Surge Current 120 100 75 TA,AMBIENT TEMPERATURE,°C Fig.3 Pulse Waveform tf=10usec 50 60 50 40 30 20 10 TJ=TJmax 8.3ms Single Half Sinepwave JEDEC Method 0 1 10 100 Number of Cycles at 60Hz www.msksemi.com P4SMAXXXA(CA)(MS) PACKAGE MECHANICAL DATA A Dimensions B C Ref. H F G D E L J K Millimeters Min. Max. Min. Max. A 4.25 4.65 0.167 0.183 B 2.50 2.90 0.098 0.114 C 1.35 1.65 0.053 0.065 D 0.76 1.52 0.030 0.060 E 4.93 5.28 0.194 0.208 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 1.98 2.41 0.078 0.095 J 6.50 L 0.256 2.30 K DO-214AC (SMA) Inches 1.70 0.090 0.067 REEL SPECIFICATION P/N P4SMAXXXA(CA)(MS) Copyright© Msksemi Incorporated PKG QTY SMA 2000 www.msksemi.com P4SMAXXXA(CA)(MS) Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. Copyright© Msksemi Incorporated www.msksemi.com
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