SS12F-AT

SS12F-AT THRU SS120F-AT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Forward Current-1A Reverse Voltage-20V to 200V FEATURES   PINNING For surface mount applications PIN DESCRIPTION 1 Cathode 2 Anode High forward surge current capability  Low power loss,high efficiency  Metal silicon junction,majority carriers conduction MECHANICAL DATA 1  Case: SMAF molded plastic body  Terminals: Solderable per MIL-STD-750， Method 2026  Weight: Approximated 0.027 grams 2 Top View Simplified outline SMAF and symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %. SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F PARAMETER SYMBOL UNIT -AT -AT -AT -AT -AT -AT -AT -AT Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS Voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TC=125℃ VDC 20 40 60 80 100 120 150 200 V IF(AV) 1.0 A Peak Forward Surge Current (Note1) IFSM 30 A Maximum Forward Voltage at 1.0 A VF Maximum DC Reverse Current at Rated DC Blocking Voltage at TA=25℃ IR 0.55 0.70 0.85 0.90 V 0.2 5 0.1 2 mA 0.3 10 TA=100℃ Typical Junction Capacitance (Note2) CJ 110 80 95 pF Typical Thermal Resistance(Note3) RθJA Storage Temperature Range TSTG -55 to +150 ℃ TJ -55 to +125 ℃ Operating Junction Temperature Range ℃/W Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method). 2. Measured at 1MHz and applied reverse voltage of 4 V D.C. 3. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/3 Dated: 04/2017 Rev:2.0 SS12F-AT THRU SS120F-AT RATINGS AND CHARACTERISTIC CURVES Fig.2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve 10 4 Instaneous Reverse Current (μA ) Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 125 100 75 50 150 10 3 TJ=100°C 10 2 TJ=75°C 101 TJ=25°C 10 0 0 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） Case Temperature (°C) Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance TJ=25°C 10 1.0 Junction Capacitance (pF) Instaneous Forward Current (A) 500 20 SS12F-AT/SS14F-AT SS16F-AT/SS18F-AT SS110F-AT/SS112F-AT SS115F-AT/SS120F-AT 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 200 100 50 SS12F-AT/SS14F-AT 20 10 SS16F-AT~SS120F-AT Transient Thermal Impedance（°C/W） Peak Forward Surge Current (A) 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 10 100 Fig.6- Typical Transient Thermal Impedance 50 1 10 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surge Current 00 1 0.1 Instaneous Forward Voltage (V) 100 Number of Cycles at 60Hz 1000 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/3 Dated: 04/2017 Rev:2.0 SS12F-AT THRU SS120F-AT PACKAGE OUTLINE SMAF 4.40 4.90 3.30 3.70 1.30 1.60 2.40 2.80 0.90 1.10 0.18 0.30 Dimensions in milimeters ORDERING INFORMATION Device Package SS12F-AT thru SS120F-AT SMAF Shipping 3,000/Tape & Reel (7 inches) 10,000/ Tape & Reel (13 inches) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/3 Dated: 04/2017 Rev:2.0