SMBJ28CA

SMBJ SERIES Transient Voltage Suppressors Features Uni-directional ◆600W peak pulse power capability at 10/1000μs waveform, Repetition rate (duty cycle):0.01% ◆For surface mounted applications to optimize board space ◆Low incremental surge impedance ◆Excellent clamping capability ◆Photo Glass and LPCVD process ◆Fast response time: typically less than 1ps from 0V to BV min. ◆Typical IR less than 1μA above 12V. ◆High Temperature soldering guaranteed: 260℃/40 seconds at terminals ◆Plastic package has underwriters laboratory flammability 94V-0 ◆Meets MSL level 1, per J-STD-020. ◆Meet Halogen free and RoHS compliant ◆AEC-Q101 qualified available ◆Automotive product No.: base P/N-H Bi-directional Mechanical Data ◆Case: JEDEC DO-214AA ◆Polarity: Color band denotes positive end (cathode) except bi-directional models ◆Weight: About 0.098g Partnumber Coding System Application ◆For Bi-directional devices, use suffix C or CA(e.g.SMBJ10C,SMBJ10CA). ◆Electrical characteristics apply in both directions. Document Number:8060004 Revision:21-Apr-28 An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~1~ SMBJ SERIES Maximum Ratings and Characteristics Parameters at 25℃ ambient temperature unless otherwise Noted. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 600 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 5.0 Watts Maximum Instantaneous ForwardVoltage at 50A for Unidirectional Only VF 3.5 V Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) IFSM 100 Amps TJ,TSTG -55 to +150 ℃ Steady state power dissipation at TA=50℃ (Fig.5) Operating junction and Storage Temperature Range. Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2. 2. Mounted on 5.0mm×5.0mm copper pads to each terminal. 3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minutes maximum. Dimensions (DO-214AA/SMB) DO-214AA(SMB) .085 (2.15) .073 (1.85) .154(3 .90) .130(3 .30) 0.106 (2.69) .187(4.75) .161(4.10) 0.082 (2.10) .091(2.30) .083(2.10) 0.081(2.072) .056(1.41) .030(0.76) .008(0.20) .003(0.08) .220(5.60) .200(5.10) Document Number:8060004 Revision:21-Apr-28 M ounting P ad Layout .012(0.31) .006(0.15) 0 .220 (5.58) D im ensions in inches and (m illim eters) An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~2~ SMBJ SERIES Electrical Characteristics Part Number Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Reverse Leakage @VRWM Unidirectional Bidirectional UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) SMBJ5.0A SMBJ5.0CA KE AE 5.0 6.40~7.00 10 9.2 65.3 800 SMBJ6.0A SMBJ6.0CA KG AG 6.0 6.67~7.37 10 10.3 58.3 800 SMBJ6.5A SMBJ6.5CA KK AK 6.5 7.22~7.98 10 11.2 53.6 500 SMBJ7.0A SMBJ7.0CA KM AM 7.0 7.78~8.60 10 12.0 50.0 200 SMBJ7.5A SMBJ7.5CA KP AP 7.5 8.33~9.21 1 12.9 46.6 100 SMBJ8.0A SMBJ8.0CA KR AR 8.0 8.89~9.83 1 13.6 44.2 50 SMBJ8.5A SMBJ8.5CA KT AT 8.5 9.44~10.40 1 14.4 41.7 20 SMBJ9.0A SMBJ9.0CA KV AV 9.0 10.00~11.10 1 15.4 39.0 10 SMBJ10A SMBJ10CA KX AX 10.0 11.10~12.30 1 17.0 35.3 5 SMBJ11A SMBJ11CA KZ AZ 11.0 12.20~13.50 1 18.2 33.0 1 SMBJ12A SMBJ12CA LE BE 12.0 13.30~14.70 1 19.9 30.2 1 SMBJ13A SMBJ13CA LG BG 13.0 14.40~15.90 1 21.5 28.0 1 SMBJ14A SMBJ14CA LK BK 14.0 15.60~17.20 1 23.2 25.9 1 SMBJ15A SMBJ15CA LM BM 15.0 16.70~18.50 1 24.4 24.6 1 SMBJ16A SMBJ16CA LP BP 16.0 17.80~19.70 1 26.0 23.1 1 SMBJ17A SMBJ17CA LR BR 17.0 18.90~20.90 1 27.6 21.8 1 SMBJ18A SMBJ18CA LT BT 18.0 20.00~22.10 1 29.2 20.6 1 SMBJ20A SMBJ20CA LV BV 20.0 22.20~24.50 1 32.4 18.6 1 SMBJ22A SMBJ22CA LX BX 22.0 24.40~26.90 1 35.5 16.9 1 SMBJ24A SMBJ24CA LZ BZ 24.0 26.70~29.50 1 38.9 15.5 1 SMBJ26A SMBJ26CA ME CE 26.0 28.90~31.90 1 42.1 14.3 1 SMBJ28A SMBJ28CA MG CG 28.0 31.10~34.40 1 45.4 13.3 1 SMBJ30A SMBJ30CA MK CK 30.0 33.30~36.80 1 48.4 12.4 1 SMBJ33A SMBJ33CA MM CM 33.0 36.70~40.60 1 53.3 11.3 1 SMBJ36A SMBJ36CA MP CP 36.0 40.00~44.20 1 58.1 10.4 1 SMBJ40A SMBJ40CA MR CR 40.0 44.40~49.10 1 64.5 9.3 1 SMBJ43A SMBJ43CA MT CT 43.0 47.80~52.80 1 69.4 8.7 1 SMBJ45A SMBJ45CA MV CV 45.0 50.00~55.30 1 72.7 8.3 1 SMBJ48A SMBJ48CA MX CX 48.0 53.30~58.90 1 77.4 7.8 1 SMBJ51A SMBJ51CA MZ CZ 51.0 56.70~62.70 1 82.4 7.3 1 SMBJ54A SMBJ54CA NE DE 54.0 60.00~66.30 1 87.1 6.9 1 SMBJ58A SMBJ58CA NG DG 58.0 64.40~71.20 1 93.6 6.5 1 SMBJ60A SMBJ60CA NK DK 60.0 66.70~73.70 1 96.8 6.2 1 SMBJ64A SMBJ64CA NM DM 64.0 71.10~78.60 1 103 5.9 1 SMBJ70A SMBJ70CA NP DP 70.0 77.80~86.00 1 113 5.3 1 SMBJ75A SMBJ75CA NR DR 75.0 83.30~92.10 1 121 5.0 1 Document Number:8060004 Revision:21-Apr-28 An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~3~ SMBJ SERIES Part Number Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Reverse Leakage @VRWM Unidirectional Bidirectional UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) SMBJ78A SMBJ78CA NT DT 78.0 86.70~95.80 1 126.0 4.8 1 SMBJ85A SMBJ85CA NV DV 85.0 94.40~104.00 1 137.0 4.4 1 SMBJ90A SMBJ90CA NX DX 90.0 100.00~111.00 1 146.0 4.1 1 SMBJ100A SMBJ100CA NZ DZ 100.0 111.00~123.00 1 162.0 3.7 1 SMBJ110A SMBJ110CA PE EE 110.0 122.00~135.00 1 177.0 3.4 1 SMBJ120A SMBJ120CA PG EG 120.0 133.00~147.00 1 193.0 3.1 1 SMBJ130A SMBJ130CA PK EK 130.0 144.00~159.00 1 209.0 2.9 1 SMBJ150A SMBJ150CA PM EM 150.0 167.00~185.00 1 243.0 2.5 1 SMBJ160A SMBJ160CA PP EP 160.0 178.00~197.00 1 259.0 2.3 1 SMBJ170A SMBJ170CA PR ER 170.0 189.00~209.00 1 275.0 2.2 1 SMBJ180A SMBJ180CA PT ET 180.0 201.00~222.00 1 292.0 2.1 1 SMBJ190A SMBJ190CA PA EC 190.0 211.00~233.00 1 308.0 2.0 1 SMBJ200A SMBJ200CA PV EV 200.0 224.00~247.00 1 324.0 1.9 1 SMBJ220A SMBJ220CA PX EX 220.0 246.00~272.00 1 340.0 1.7 1 SMBJ250A SMBJ250CA PZ EZ 250.0 279.00-309.00 1 405.0 1.5 1 SMBJ300A SMBJ300CA QE FE 300.0 335.00-371.00 1 486.0 1.3 1 SMBJ350A SMBJ350CA QG FG 350.0 391.00-432.00 1 567.0 1.1 1 SMBJ400A SMBJ400CA QK FK 400.0 447.00-494.00 1 648.0 0.9 1 SMBJ440A SMBJ440CA QM FM 440.0 492.00-543.00 1 713.0 0.9 1 Notes: For bidirectional type having VRWM of 10V and less, the IR limit is double. Document Number:8060004 Revision:21-Apr-28 An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~4~ SMBJ SERIES Ratings and Characteristic Curves(TA=25℃ unless otherwise noted) Figure 2. Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage % Figure 1. Peak Pulse Power Rating Curve 100 75 50 25 0 0 25 50 75 100 125 150 175 TA-Ambient Temperature (℃) Figure 3. Pulse Waveform 100000 TJ=25℃ Pulse Width(td) is defined as the point where the peak current decays to 50% of IPPM tr=10µs Bi-directional V=0V 10000 Peak Value IPPM 100 Uni-directional V=0V Cj (pF) IPPM - Peak Pulse Current, %IRSM 150 Figure 4. Typical Junction Capacitance Half Value IPPM (IPPM/2) 1000 Uni-direct ional @VR 100 50 10/1000µs Waveform as defined by R.E.A td 0 0 Bi-directional @VR 10 TJ=25℃ f=1.0MHz Vsig=50mVp-p 1 1.0 2.0 3.0 4.0 1 t-Time (ms) Figure 5. Steady State Power Dissipation DeratingCurve Document Number:8060004 Revision:21-Apr-28 10 100 1000 VBR-Reverse Breakdown Voltage (V) Figure 6. Maximum Non-Repetitive Forward Surge Current An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~5~ SMBJ SERIES Reflow Soldering Parameters tP TP Critical Zone TL to TP Ramp-up Temperature TL tL TS max Ramp-down TS min tS Preheat 25℃ t 25℃ to Peak Time (t) Reflow Condition Pre heat Lead-free Assembly -Temperature Min (TS min) 150℃ -Temperature Max (TS max) 200℃ -Time (min to max) ( tS) 60-180 seconds Average ramp-up rate (TL to TP) 3℃/second max. TS max to TL -Ramp-up Rate 3℃/second max. Reflow -Temperature (TL) (Liquidus) 217℃ -Time (min to max) (tS) 60-150 seconds Peak Temperature (TP) 260(+0/-5)℃ Time within 5℃ of actual Peak Temperature (tP) 20-40 seconds Ramp-down Rate 6℃/second max. Time 25℃ to Peak Temperature 8 minutes max. Do not exceed 280℃ Reliability Standards Terminal strength MIL-STD-750 Method 2026 Mechanical shock JESD22-B104 Vibration JESD22-B103 High Temp. Storage JESD22-A103 High Temp Reverse Bias JESD22-A108 Temperature Cycling JESD22-A104 High Temp High humidityReverse Bias JESD22-A101 Resistance to solder heat JESD22-B106 Document Number:8060004 Revision:21-Apr-28 An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~6~ SMBJ SERIES Packaging Part number Compnent Package Quantity Packaging Option Packaging Specification SMBJxxxXX DO-214AA 3000 Tape & Reel-12mm tape/13″ reel EIA STD RS-481 SMBJxxxXX-T7 DO-214AA 500 Tape & Reel-12mm tape/7″ reel EIA STD RS-481 Tape and Reel Specification 0.157 (4.0) 0.472 (12.0) 0.36 (9.2) 0.315 (8.0) 0.059(1.5)DIA Cover Tape 12.99 (330.0) 0.512(13.0) Arbor Hole Dia Dimensions are in inches (and millimeters). 0.49 (12.4) Direction of Feed Document Number:8060004 Revision:21-Apr-28 An hui Anmei Semiconductor Co.,Ltd. www.amsemi.com.cn ~7~ SMBJ SERIES IMPORTANT NOTICE AND DISCLAIMER AM RESERVES THE RIGHT TO MAKE CHANGES TO ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. CUSTOMERS SHOULD OBTAIN AND CONFIRM THE LATEST PRODUCT INFORMATION AND SPECIFICATIONS BEFORE FINAL DESIGN PURCHASE OR USE. AM disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. All information are provided as-is, even it has qualified by the AEC-Q101 which satisfy industrial application requirement, except as expressly stated in this data sheet is applied for automotive grade, AM make no warranties, representation or guarantee, whether express, implied or statutory, including, without limitation, regarding any merchantability, satisfactory quality, or fitness for a particular purpose with respect to AM. AM does not assume any liability or compensation for any application assistance or customer product design, and make no warranty or accept any liability with products, which are purchased or used for any unintended or unauthorized application. 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