瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
●
低浪涌电阻
●
优异的箝位性能
●
小型化紧凑封装，内部结构去应力设计
●
12 V以上电压规格对应漏电典型值低于1.0 μA
●
重复率0.01% 的10/1000 μS 波形对应峰值脉冲功率600 W
●
表贴应用，节约空间
●
典型的故障模式为电压或电流超过额定而导致的短路
●
IEC 61000-4-2 ESD 30 kV(空气)，30 kV(接触)
●
数据线EFT保护符合IEC 61000-4-4
●
快速响应时间
●
玻璃钝化保护
●
回流焊高温保证:260 °C/30 s
●
温度系数典型值0.1%
●
密封材料阻燃等级V-0
●
湿度敏感等级符合MSL 等级1
Transient Voltage Suppressor (TVS) is a circuit
●
引脚镀雾锡
protection component that either attenuates (reduces)
●
无卤素，符合RoHS要求
or filters a transient voltage spike (overvoltage), TVS
●
TVS
概述 Description
瞬态抑制二极管 (TVS) 是一种电路保护元件，它可以削
弱或过滤突增的瞬态电压(过压)，在浪涌到来瞬间几纳
秒时间内发生雪崩击穿，将浪涌电流引至接地端，并将
电压箝位在安全范围内，从而实现了高效能的电压保护
diodes provide critical protection by going into
●
无铅E3：二级互连引线无铅，端子镀锡(Sn) (IPC/JEDEC J-STD609A.01)
Low incremental surge resistance
avalanche breakdown within no more than a few
●
Excellent clamping capability
nanoseconds after a strike, clamping the transient
●
Low profile package with built-in strain relief
voltage, and routing its current to the ground.
●
Typical IR less than 1.0 μA above 12 V
●
600 W peak pulse power capability with a 10/1000 μS Waveform,
repetition rate (duty cycle): 0.01%
应用 Applications
●
For surface mounted applications to optimize board space
●
通信设备
Communication Equipment
●
Low profile package，Built-in strain relief
●
安防
Security & Protection
●
Typical failure mode is short from over-specified voltage or current
●
工控设备
Industrial Control Equipment
●
IEC 61000-4-2 ESD 30 kV (Air), 30 kV (Contact)
●
电源
Power Supply
●
EFT protection of data lines in accordance with IEC 61000-4-4
●
汽车电子
Automotive Electronics
●
Very fast response time
●
新能源设备
New Energy
●
防雷保护
Glass passivated chip junction
●
Lightning Protection
●
High temperature to reflow soldering guaranteed: 260
°C/30sec
●
功能图 Functional Diagram
(αT:Temperature Coefficient, typical value is 0.1%)
●
负极
Cathode
正极
Anode
单向 Uni-Directional
VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))
Plastic package is flammability rated V-0 per Underwriters Laboratories
●
Meet MSL level1, per J-STD-020
●
Matte tin lead–free plated
●
Halogen free and RoHS compliant
●
Pb-free E3 means 2nd level interconnect is Pb-free and the terminal
finish material is tin(Sn) (IPC/JEDEC J-STD-609A.01)
双向 Bi-Directional
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1
TVS
特性 Features
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
封装尺寸 Package Outline Dimensions (DO-214AA)
L
H
D
L2
T
L1
TVS
A
E
安装布局
B
C
(Mounting Pad Layout)
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英制(英寸)
Inches
Min.
Max.
Min.
Max.
L
4.060
4.750
0.160
0.187
W
3.300
3.940
0.130
0.155
W1
1.930
2.200
0.076
0.086
H
1.990
2.610
0.078
0.103
T
0.152
0.305
0.0086
0.012
L1
5.210
5.590
0.205
0.220
L2
0.760
1.520
0.030
0.060
D
-
0.203
-
0.008
A
-
2.740
-
0.107
B
2.160
-
0.085
-
C
2.160
-
0.085
-
E
2.260
-
0.089
-
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2
TVS
W1 W
公制(毫米)
Millimeters
符号 Symbol
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
额定参数与特性 Maximum Ratings and Characteristics
(除另有注释，默认TA=25 ℃ Ratings at 25 °C ambient temperature unless otherwise specified.)
值
Value
单位
Unit
10/1000 μS 波形下的峰值功耗 (图 2)(1)(2)(图 4)-单芯片器件
Peak Power Dissipation (Fig2) with a 10/1000 μS waveform(1)(2) (Fig4)-Single Die Parts
PPPM
600
W
10/1000 μS 波形下的峰值功耗 (图 2)(1)(2) (图 4)-双芯片器件 (5)
Peak Power Dissipation (Fig2) with a 10/1000 μS waveform(1)(2)(Fig.4)-Stacked Die
Parts(5)
PPPM
800
W
峰值功耗 ,无限散热，TL=50 °C
Peak Power Dissipation on Infinite Heat Sink at TL=50 °C
PD
5.0
W
IFSM
100
A
正向瞬态峰值电压@ IF=50 A ，仅适用于单向产品
Maximum Instantaneous Forward Voltage at 50 A for Unidirectional Only(4)
VF
3.5/5.0
V
工作温度范围
Operating Temperature Range
TJ
-65 to 150
°C
存储温度范围
Storage Temperature Range
TSTG
-65 to 175
°C
热阻(结至引线)
Typical Thermal Resistance Junction to Lead
RθJL
20
°C/W
热阻(结至环境)
Typical Thermal Resistance Junction to Ambient
RθJA
100
°C/W
TVS
符号
Symbol
TVS
参数
Parameter
正向脉冲电流峰值(3),额定负载叠加8.3 ms 单半正弦波测得(JEDEC方法)
Peak Forward Surge Current,8.3 ms single half sinewave superimposed on rated load
(JEDEC Method)(3)
注释 Notes
1.
2.
3.
4.
5.
参照图4非重复性脉冲电流波形，初始结温25 °C 以图3所示曲线降额（环境温度TA=25 ℃ ）。
Non-repetitive current pulse, per Fig. 4 and derated above TJ (initial)=25 °C per Fig.
测试安装于5.0 mm 2 焊盘 。
Mounted on 5.0 mm 2 land areas.
叠加波形为8.3 ms单个半周期正弦波或等幅方波 , 最长周期4次/min。
Measured of 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute
单芯片VF< 3.5 V，叠层芯片VF< 5.0 V 。
VF < 3.5 V for single die parts and VF< 5.0 V for stacked-die parts.
双芯片产品的详细信息，请参阅电气特性中以*标示的部件编号。
For stacked die component details, please refer to models marked with * in electrical characteristics table.
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瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
型号规则 Part Numbering System
P6SMB
XX
C
A
产品系列 Product Series
反向关断电压
Reverse Stand-off Voltage
C: 双向 Bi-directional
None: 单向 uni-direction
TVS
TVS
5% VBR 电压容差
5% VBR Voltage tolerance
标记 Marking
阴极线
Cathode Band
SET
SET
XXX
YMXXX
YMXXX
商标
Trademark
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XXX
日期代码 Data Code
标记代码
Marking Code
商标
Trademark
日期代码 Data Code
Y-年 Year
Y-年 Year
M-月 Month
M-月 Month
XXX-批次号 Lot code
XXX-批次号 Lot code
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标记代码
Marking Code
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瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
术语 Glossary
项目
Item
描述
Description
箝位电压 Clamping Voltage
VC
TVS在低差阻区域内的电压，用于限制设备两端的电压。
Voltage across TVS in a region of low differential resistance that serves to limit the voltage across the device
terminals.
TVS
VR
TVS 在没有导通状态下最高电压。
Maximum voltage that can be applied to the TVS without operation.
注：也用VWM（最高直流工作电压）表示，也称为截止电压(Vso)。
NOTE : It is also shown as VWM (maximum working voltage (maximum d.c. voltage)) and known as rated standoff voltage (Vso).
反向漏电流 Reverse Leakage Current
IR
量测VR的电流。
Current measured at VR.
注：也用ID 待机电流表示。
NOTE : Also shown as ID for stand-by current.
击穿电压 Breakdown Voltage
VBR
在击穿区以指定电流IT (测试电流)通过TVS的电压。
Voltage across TVS at a specified current IT (test current) in the breakdown region.
额定随机重复峰值脉冲电流 Rated Random Recurring Peak Impulse Current
IPPM
施加在设备上的随机重复峰值脉冲电流的最大额定值。
Maximum-rated value of random recurring peak impulse current that may be applied to a device.
额定平均功率 Rated Average Power Dissipation
PM(AV)
所有电源(包括瞬态电流和待机电流)在短时间内平均产生的最大额定功耗。
Maximum-rated value of power dissipation resulting from all sources, including transients and standby current,
averaged over a short period of time.
额定随机重复峰值脉冲功率 Rated Random Recurring Peak Impulse Power Dissipation
PPPM
额定随机重复峰值脉冲电流(IPPM) 和规定的最大箝位电压(VC)乘积的最大额定值。
Maximum-rated value of the product of rated random recurring peak impulse current (IPPM) multiplies by specified
maximum clamping voltage (VC).
电容 Capacitance
CJ
在规定的频率和电压下所测量的TVS电容。
Capacitance across the TVS measured at a specified frequencyx and voltage.
—(GB-T 18802.321 / IEC 61643-321 / JESD210A)
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TVS
反向关断电压 Reverse Stand-off Voltage
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
项目
Item
描述
Description
正向浪涌峰值电压 Peak Forward Surge Voltage
VFS
在指定的正向浪涌电流(IFS)和持续时间下，通过TVS的峰值电压。
Peak voltage across TVS for a specified forward surge current (IFS) and time duration.
注：也用VF 表示。
NOTE : Also shown as VF.
正向浪涌电流 Forward Surge Current
IFS
在正向导通区域通过TVS的脉冲电流。
Pulsed current through TVS in the forward conducting region.
注：也用IF表示。
NOTE : Also shown as IF.
击穿电压的变化与温度变化的比值。
The change of breakdown voltage divided by the change of temperature.
峰值脉冲电流 Peak pulse Current
IPP
施加在TVS上的峰值脉冲电流，以确定箝位电压VC 的特定波形。
Peak pulse current value applied across the TVS to determine the clamping voltage VC for a specified wave shape.
脉冲直流测试电流 Pulsed D.C. Test Current
IT
测量击穿电压VBR的试测试电流。该电流值由制造商确定，通常以脉冲持续时间小于40 ms的毫安级电流给出。
Test current for measurement of the breakdown voltage VBR. This is defined by the manufacturer and usually
given in milliamperes with a pulse duration of less than 40 ms.
注：也用IBR表示。
NOTE : Also shown as IBR .
—(GB-T 18802.321 / IEC 61643-321 / JESD210A)
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TVS
TVS
击穿电压温度系数 Temperature Coefficient of Breakdown Voltage
αV(BR)
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
型号
Part Number
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
Uni
Bi
Uni
Bi
P6SMB6.8A
P6SMB6.8CA
6V8A
6V8C
6.45
P6SMB7.5A
P6SMB7.5CA
7V5A
7V5C
P6SMB8.2A
P6SMB8.2CA
8V2A
P6SMB9.1A
Max
反向关断
最大反向
最大峰值
最大箝位
电流
电压
Test
Reverse
Current Stand-off
IT
Voltage
VR
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak
Pulse
Current
IPP
电压
Max.
Clamping
Voltage
VC@IPP
(mA)
(V)
(μA)
(A)
(V)
7.14
10
5.8
1000
58.1
10.5
7.13
7.88
10
6.4
500
54
11.3
8V2C
7.79
8.61
10
7.02
200
50.4
12.1
P6SMB9.1CA
9V1A 9V1C
8.65
9.55
1
7.78
50
45.5
13.4
P6SMB10A
P6SMB10CA
10A
10C
9.5
10.5
1
8.55
10
42.1
14.5
P6SMB11A
P6SMB11CA
11A
11C
10.5
11.6
1
9.4
5
39.1
15.6
P6SMB12A
P6SMB12CA
12A
12C
11.4
12.6
1
10.2
5
36.5
16.7
P6SMB13A
P6SMB13CA
13A
13C
12.4
13.7
1
11.1
1
33.5
18.2
P6SMB15A
P6SMB15CA
15A
15C
14.3
15.8
1
12.8
1
28.8
21.2
P6SMB16A
P6SMB16CA
16A
16C
15.2
16.8
1
13.6
1
27.1
22.5
P6SMB18A
P6SMB18CA
18A
18C
17.1
18.9
1
15.3
1
24.2
25.5
P6SMB20A
P6SMB20CA
20A
20C
19
21
1
17.1
1
22
27.7
P6SMB22A
P6SMB22CA
22A
22C
20.9
23.1
1
18.8
1
19.9
30.6
P6SMB24A
P6SMB24CA
24A
24C
22.8
25.2
1
20.5
1
18.4
33.2
P6SMB27A
P6SMB27CA
27A
27C
25.7
28.4
1
23.1
1
16.3
37.5
P6SMB30A
P6SMB30CA
30A
30C
28.5
31.5
1
25.6
1
14.7
41.4
P6SMB33A
P6SMB33CA
33A
33C
31.4
34.7
1
28.2
1
13.3
45.7
P6SMB36A
P6SMB36CA
36A
36C
34.2
37.8
1
30.8
1
12.2
49.9
P6SMB39A
P6SMB39CA
39A
39C
37.1
41
1
33.3
1
11.3
53.9
P6SMB43A
P6SMB43CA
43A
43C
40.9
45.2
1
36.8
1
10.3
59.3
P6SMB47A
P6SMB47CA
47A
47C
44.7
49.4
1
40.2
1
9.4
64.8
P6SMB51A
P6SMB51CA
51A
51C
48.5
53.6
1
43.6
1
8.7
70.1
P6SMB56A
P6SMB56CA
56A
56C
53.2
58.8
1
47.8
1
7.9
77
P6SMB58A
P6SMB58CA
58A
58C
55.1
60.9
1
52.78
1
7.7
79.8
P6SMB62A
P6SMB62CA
62A
62C
58.9
65.1
1
53
1
7.2
85
P6SMB68A
P6SMB68CA
68A
68C
64.6
71.4
1
58.1
1
6.6
92
P6SMB75A
P6SMB75CA
75A
75C
71.3
78.8
1
64.1
1
5.9
103
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(V)
测试
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7
TVS
电气特性 ( 除另有注释，默认TA=25 ℃ )
Electrical Characteristics (TA=25 °C unless otherwise noted )Table 1
瞬态抑制二极管 TVS Diodes
型号
Part Number
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
Uni
Bi
Uni
Bi
P6SMB82A
P6SMB82CA
82A
82C
77.9
P6SMB91A
P6SMB91CA
91A
91C
P6SMB100A
P6SMB100CA
100A
P6SMB110A
Max
测试
反向关断
最大反向
最大峰值
最大箝位
电流
电压
Test
Reverse
Current Stand-off
IT
Voltage
VR
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak
Pulse
Current
IPP
电压
Max.
Clamping
Voltage
VC@IPP
(V)
(mA)
(V)
(μA)
(A)
(V)
86.1
1
70.1
1
5.4
113
86.5
95.5
1
77.8
1
4.9
125
100C
95
105
1
85.5
1
4.5
137
P6SMB110CA
110A 110C
105
116
1
94
1
4
152
P6SMB120A
P6SMB120CA
120A
120C
114
126
1
102
1
3.7
165
P6SMB130A
P6SMB130CA
130A
130C
124
137
1
111
1
3.4
179
P6SMB150A
P6SMB150CA
150A
150C
143
158
1
128
1
2.9
207
P6SMB160A
P6SMB160CA
160A
160C
152
168
1
136
1
2.8
219
P6SMB170A
P6SMB170CA
170A
170C
162
179
1
145
1
2.6
234
P6SMB180A
P6SMB180CA
180A
180C
171
189
1
154
1
2.5
246
P6SMB200A
P6SMB200CA
200A
200C
190
210
1
171
1
2.2
274
P6SMB220A
P6SMB220CA
220A 220C
209
231
1
185
1
1.9
328
P6SMB250A
P6SMB250CA
250A 250C
237
263
1
214
1
1.8
344
P6SMB300A
P6SMB300CA
300A
300C
285
315
1
256
1
1.5
414
P6SMB350A*
P6SMB350CA*
350A
350C
332
368
1
300
1
1.3
482
P6SMB400A*
P6SMB400CA*
400A
400C
380
420
1
342
1
1.1
548
P6SMB440A*
P6SMB440CA*
440A
440C
418
462
1
376
1
1.0
602
P6SMB480A*
P6SMB480CA*
480A
480C
456
504
1
408
1
0.9
658
P6SMB510A*
P6SMB510CA*
510A
510C
485
535
1
434
1
0.9
698
P6SMB530A*
P6SMB530CA*
530A
530C
503.5
556.5
1
451
1
0.8
725
P6SMB540A*
P6SMB540CA*
540A
540C
513
567
1
460
1
0.8
740
P6SMB550A*
P6SMB550CA*
550A
550C
522.5
577.5
1
468
1
0.8
760
P6SMB600A*
P6SMB600CA*
600A
600C
570
630
1
512
1
0.75
828
注释 Notes:
1.对于VR为10 V及更低的双向产品，IR值需乘以两倍。
For bidirectional type having VR of 10 volts and less, the IR should be doubled.
2.对于没有A的产品，VBR范围为±10%且VC也比有A的产品高5%，当前不推荐没有A的产品用于新设计，带A的产品推荐优先选用。
For parts without A in the PN, the VBR tolerance is ± 10% and VC is 5% higher than parts with A. The parts without A are currently
available, but not recommended for new designs. The parts with A are preferred.
3.双芯片产品的详细信息，请参阅电气特性中以*标示的部件编号 。
For stacked die component details, please refer to models marked with * in electrical characteristics table.
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8
TVS
P6SMB Series
Transient Voltage Suppression Diodes
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
伏安特性曲线 I-V Curve Characteristics
单向
Uni-directional
VC
双向
Bi-directional
IF
VBR VWM
IPP
IT
ID
VC VBR VWM
ID VF
IT
ID
IT
TVS
IPP
参考性能曲线(除有另外注释，默认TA=25 ℃ )
Performance Curve for Reference(TA=25 °C unless otherwise noted)
脉冲峰值功率 PPPM - Peak Pulse Power (KW)
电压/电流 Voltage or Current
Voltage Transient
Voltage Across TVS
Current Through TVS
100
TJ (initial)=Tamb
Stacked die,800W
At 10×1000 µs,25 °C
10
Signal die,600W
At 10×1000 µs,25 °C
1.0
0.1
0.01
0.001
0.1
1
10
td – 脉宽 Pulse Width (ms)
Time
FIGURE 2 峰值脉冲功率额定曲线
Peak Pulse Power Rating Curve
FIGURE 1 TVS瞬态箝位波形
TVS Transients Clamping Waveform
150
100
Tr=10μs
80
60
40
20
0
0
25
50
75
100
120
150
175
TJ –初始结温 Initial Junction Temperature (°C )
FIGURE 3 峰值脉冲功率降额曲线
Peak Pulse Power Derating Curve
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IPPM - 峰值脉冲电流 Peak Pulse Current, % IRSM
降额百分比 Peak Pulse Power (PPP) or
Current (IPPM) Derating in Percentage, %
TVS
IPP
VWM VBR VC
TJ = 25 °C Pulse Width
(td) is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
10
Half Value
IPPM/2
10/1000 μs Waveform
as defined by R.E.A.
50
td
0
0
1.0
2.0
3.0
4.0
t –时间 Time (ms)
FIGURE 4 脉冲波形 Pulse Waveform
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9
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
10000
100
Uni-direction at Zero-bias
10
Bi-direction at
Zero-bias
1
100
Bi/Uni direction at
10
0.1
VR-bias
0.01
1
1
10
100
0.001
1000
0.01
0.1
TVS
VBR – 反向击穿电压 Reverse Breakdown Voltage (V)
10
100
1000
TP – 脉宽 Pulse Duration (s)
FIGURE 5 典型结电容 Typical Junction Capacitance
FIGURE 6 典型瞬态热阻 Typical Transient Thermal Impedance
120
100.0
IF– 正向峰值电流 Peak Forward Current (A)
IFSM - 正向浪涌峰值电流 Peak Forward Surge Current (A)
1
TVS
电容 CJ –(pF)
1000
100
80
60
40
20
0
1
10
Single die
Stacked die
10.0
1.0
0.1
100
0.0
1.0
60 Hz周波数 Number of Cycles at 60 Hz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VF– 正向峰值电压 Peak Forward Voltage (V)
FIGURE 7 最大非重复正向浪涌电流(单向型)
FIGURE 8 峰值正向电压及电流(典型值)
Maximum Non-Repetitive Forward Surge Current
Peak Forward Drop vs Peak Forward Current (Typical Values)
Uni-Directional only
环境特性 Environmental Specifications 物理特性 Physical Specifications
高温存储
High Temp. Storage
JESD22-A103
高温反偏 HTRB
JESD22-A108
温度循环
Temperature Cycling
JESD22-A104
湿度敏感性等级 MSL
JESDEC-J-STD-020, Level 1
高温高湿反偏 H3TRB
JESD22-A101
耐焊接热 RSH
JESD22-A111
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重量
Weight
0.003 ounce,0.093 grams
封装
Case
JESD22DO214AA. Molded plastic body
over glass passivated junction
极性
Polarity
Color band denotes positive end (cathode)
except Bidirectional
端子
Terminal
Matte Tin-plated leads, Solderability per
JESD22-B102
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10
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
焊接参数 Soldering Parameters
tP
TP
Critical Zone
TL to TP
Ramp-up
tL
TS
TS
Ramp-down
tS
Preheat
TVS
TVS
温度 Temperature (T)
TL
25 °C
t 25 °C to Peak
时间 Time (t)
回流焊条件 Reflowing Condition
回流焊接参数
Reflow Soldering Parameters
预热 Pre-heat
无铅组装
Lead-Free Assembly
最低温(TS (min))
Temperature Min (TS (min))
150 °C
最高温(TS (max))
Temperature Max (TS (max))
200 °C
升温时长(tS)
Time (min to max) (tS)
60 ~ 120 seconds
平均升温速率(液相温度(TL)至峰值温度(TP))
3 °C / second max.
Average Ramp-up Rate ( Liquidus Temp (TL) to Peak Temp (TP))
TS (max) 到TL升温速率
3 °C / second max.
TS (max) to TL Ramp-up Rate
温度 Temperature (TL) (Liquidus)
回流 Reflow
时长 Time (min to max) (tL)
实际峰值温度 (tP) 5 °C 以内的时间
Time of within 5 °C of Actual Peak Temperature (tP)
降温速率 Ramp-down Rate
8 Minutes max.
260 °C
极限温度 Do Not Exceed
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20 ~ 40 seconds
6 °C / second max.
25 °C 至峰值温度时长 Time from 25 °C to Peak Temperature
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60 ~ 150 seconds
260+0/-5 °C
峰值温度 Peak Temperature (TP)
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217 °C
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11
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
编带
Tape
P2
P0
符号
Symbol
尺寸
Dimension (mm)
W
12.00+0.30/-0.10
P0
4.00±0.10
P1
8.00±0.10
P2
2.00±0.05
D0
1.55±0.05
D1
1.55±0.05
E
1.75±0.10
F
5.50±0.05
A0
3.78±0.10
B0
5.65±0.15
K0
2.70±0.10
T
0.30±0.05
T
TVS
D1
B0
W
F
E
D0
P1
A0
K0
卷盘尺寸
Reel Size
13寸卷盘
13” Reel
A
A
330 mm
C
13.2 mm
W1
12.5 mm
C
Arbor hole Dia.
Direction of Feed
W1
型号
Part Number
封装
Package
卷盘数量QTY
(Reel)
包装选项
Packaging Option
包装规格
Packaging Specification
P6SMB×××
DO-214AA
3000 PCS
Tape & Reel – 12 mm tape/13” reel
EIA STD RS-481
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12
TVS
包装信息 Packaging Information
瞬态抑制二极管 TVS Diodes
P6SMB Series
TVS
TVS
Transient Voltage Suppression Diodes
注意
ATTENTION
使用方法 Usage
1.
2.
3.
请在规定的温度范围内使用TVS。
TVS must be operated in the specified ambient temp.
请勿使用强极性溶剂清洗TVS以免破坏封装层。
Do not clean the TVS with strong polar solvent such as ketone, esters, benzene and halogenated hydrocarbon, to avoid
damaging the encapsulating layer.
请勿对TVS施加剧烈的振动，冲击或压力，以避免元件开裂。
Please do not apply severe vibration, shock or pressure to TVS, to avoid element cracking.
更换 Replacement
1.
2.
若TVS出现可视化损伤，请将其更换。
If TVS is visually damaged, please replace it.
TVS为非修理型产品，安全起见，请更换同等规格的TVS。
TVS is a non-repairable product. For safety sake, please use equivalent TVS for replacement.
存储 Storage
1.
存储温度范围。
Storage Temp. Range: (-55 to 150) °C.
2.
请勿将TVS存放于高温高湿或腐蚀性气体环境中，已避免影响引脚的焊接性能，请于收货后一年内进行使用 。
Do not store the TVS at the high temp., high humidity or corrosive gas environment, to avoid influencing the solder-ability
of the lead wires. The product shall be used up within 1 year after receiving the goods.
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13
瞬态抑制二极管 TVS Diodes
P6SMB Series
Transient Voltage Suppression Diodes
环境条件 Environmental Conditions
1.
2.
3.
请勿暴露于室外阳光直射环境。
TVS should not be exposed to the open air, nor direct sunshine.
请避免雨水，水汽等高温高湿环境。
TVS should avoid rain, water vapor or other condition of high temp. and high humidity.
请避免沙尘，盐雾等有害环境。
TVS should avoid sand dust, salt mist, or other harmful gases.
TVS最大典型结电容 Max. Typical Capacitance of TVS
高频线路应用中请参照规格书中所给出的典型电容曲线。
The typical capacitance of TVS is listed in the specifications. Designers may refer to it when designing TVS in high frequency
circuit.
1.
TVS
TVS
安装机械应力 Installation Mechanical Stress
安装TVS时请避免敲击，防止物理损伤。
Do not knock TVS when installing, to avoid mechanical damage.
2.
请不要对 TVS 施加剧烈的振动、冲击或压力，以免表面树脂或元件破裂。
Please do not apply severe vibration, shock or pressure to TVS, to avoid surface resin or element cracking.
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