SMBJ60A

安徽富信半导体科技有限公司 ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD. SMBJ SERIES SMB TVS 瞬态电压㧕制二极管 ▉Features 特点 Excellent Clamping Capability 优秀的钳位能力 Fast Response Time 快速反应时间 Built-in Strain Relief 内应力释放 ▉Applications 应用 Clamping Voltage 钳制电压 ▉Internal Schematic Diagram 内部结构 ▉Absolute Maximum Ratings 最大额定值 Characteristic 特性参数 Symbol 符号 Rat 额定值 Unit 单位 PPK 600 W VRWM 5.0~440 V Peak Pulse Current 峰值脉冲电流 IPP 65.2~0.9 A Peak Forward Surge Current 峰值正向浪涌电流(UNI) IFSM 100 A Forward Voltage@IF=35A 正向电压(UNI) VF 3.5 V Thermal Resistance Junction-Ambient 结到环境热阻 RθJA 20 ℃/W Junction/Storage Temperature 结温/储存温度 TJ,Tstg -55~150 ℃ Peak Power Dissipation 峰值功率 Reverse Stand-off Work Voltage 反向工作电压 ■Electrical Characteristics 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) 安徽富信半导体科技有限公司 ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD. Type Number SMBJ5.0(C)A SMBJ6.0(C)A SMBJ6.5(C)A SMBJ7.0(C)A SMBJ7.5(C)A SMBJ8.0(C)A SMBJ8.5(C)A SMBJ9.0(C)A SMBJ10(C)A SMBJ11(C)A SMBJ12C)A SMBJ13(C)A SMBJ14(C)A SMBJ15(C)A SMBJ16(C)A SMBJ17(C)A SMBJ18(C)A SMBJ20(C)A SMBJ22(C)A SMBJ24(C)A SMBJ26(C)A SMBJ28(C)A SMBJ30(C)A SMBJ33(C)A SMBJ36(C)A SMBJ40(C)A SMBJ43(C)A SMBJ45(C)A SMBJ48(C)A SMBJ51(C)A SMBJ54(C)A SMBJ58(C)A SMBJ60(C)A SMBJ64(C)A SMBJ70(C)A SMBJ75(C)A SMBJ78(C)A SMBJ85(C)A SMBJ90(C)A SMBJ100(C)A SMBJ110(C)A SMBJ120(C)A SMBJ130(C)A SMBJ150(C)A SMBJ160(C)A SMBJ170(C)A SMBJ188(C)A SMBJ200(C)A SMBJ220(C)A SMBJ250(C)A SMBJ300(C)A SMBJ350(C)A SMBJ400(C)A SMBJ440(C)A VRWM (V) 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 200 220 250 300 350 400 440 VBR(V)@IT Min. Max. 6.40 7.25 6.67 7.67 7.22 8.30 7.78 8.95 8.33 9.58 8.89 10.23 9.44 10.82 10.0 11.50 11.1 12.80 12.2 14.00 13.3 15.30 14.4 15.60 15.6 17.90 16.7 19.20 17.8 20.50 18.9 21.70 20.0 23.30 22.2 25.50 24.4 28.00 26.7 30.70 28.9 33.20 31.1 35.80 33.3 38.30 36.7 42.20 40.0 46.00 44.4 51.10 47.8 54.90 50.0 57.50 53.3 61.30 56.7 65.20 60.0 69.00 64.4 74.10 66.7 76.70 71.1 81.80 77.8 89.50 83.3 95.80 86.7 99.70 94.4 108.2 100 115.5 111 128.0 122 140.5 133 153.0 144 165.5 167 192.5 178 205.0 189 217.5 209 231.0 224 247.0 246 272.0 279 305.0 335 371.0 391 432.0 447 494.0 492 543.0 IT (mA) 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VC(V) @IPP 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 328 332 352 405 486 567 648 713 IPP (A) 65.2 58.3 53.6 50.0 46.5 44.1 41.7 39.0 35.3 33.0 30.2 27.9 25.8 24.0 23.1 21.7 20.5 18.5 16.9 15.4 14.2 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.7 7.3 6.9 6.4 6.2 5.8 5.3 4.9 4.7 4.4 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.2 2.0 1.9 1.5 1.5 1.3 1.1 0.9 0.9 IR(µA) @VRWM 800 800 500 200 100 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Marking A(UNI) CA(BI) KE AE KG AG KK AK KM AM KP AP KR AR KT AT KV AV KX AX KZ AZ LE BE LG BG LK BK LM BM LP BP LR BR LT BT LV BV LX BX LZ BZ ME CE MG CG MK CK MM CM MP CP MR CR MT CT MV CV MX CX MZ CZ NE DE NG DG NK DK NM DM NP DP NR DR NT DT NV DV NX DX NZ DZ PE EE PG EG PK EK PM EM PP EP PR ER PT ET PV EV PX EX PZ EZ QE FE QG FG QK FK QM FM 安徽富信半导体科技有限公司 ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD. SMBJ SERIES ■Typical Characteristic Curve 典型特性曲线 安徽富信半导体科技有限公司 ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD. SMBJ SERIES ■Dimension 外形封装尺寸