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P3100SB

P3100SB

  • 厂商:

    JINGYANG(晶扬电子)

  • 封装:

    SMB(DO-214AA)

  • 描述:

  • 数据手册
  • 价格&库存
P3100SB 数据手册
P3100SB Thyristors Solid Protection Device Features  For surface mounted applications to optimize board space  Low profile package  Bidirectional crowbar protection  Low leakage current : I = 5uA max  Low on-state voltage  Low Capacitance  Response Time is < 1us  YD/T 950 IEC 61000-4-5  YD/T 993 ITU K.20/21  YD/T 1082 TIA-968-A  GR 1089 Intra-building  Solid-state silicon technology  Meets MSL 1 Requirements  ROHS compliant SMB Schematic Diagram Maximum Ratings and Electrical Characteristics Symbol Parameter Value Unit IPP Non-repetitive peak pulse current 10/1000 us 80 A VPP Non-repetitive peak pulse voltage 10/700us 4000 V VESD ESD Rating per IEC61000-4-2: Contact 8 Air 15 KV Ts Storage temperature range -40 to +150 ℃ Tj Maximum junction temperature 150 ℃ Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected. *Other voltages may be available upon request. Revision B1 1  service@jy-electronics.com.cn  www.jy-electronics.com.cn P3100SB Thyristors Solid Protection Device Electrical Parameters Symbol VRM Peak off-state voltage IRM Off-state current VS Switching voltage IS Switching current VT On-state voltage IT On-state current IH Holding current CO Off-state capacitance Parameter VRM IRM Ih IBO VBO Min. IRM=1μA VRM 1KV/μs VT IT=2.2A IH 10A,10/1000μs IR VRWM VBO Typ. Max. 2 Unit V 5 uA 350 4 V 120 2V,1MHz V IBO Ih 275 IS Revision B1 IR VRWM Revision B1 TestsConditions Vs CO I Parameter V mA 45 pF 800 mA  service@jy-electronics.com.cn  www.jy-electronics.com.cn P3100SB Thyristors Solid Protection Device Typical electrical characterist applications Rating and Characteristics Curves 1 Repetitive peak current %IPP 100 Tj=25℃ C[VR]/C[VR=1V] Tr=rise time(us) Tp =pulse duration time (us) F=1MHZ 0.8 VRM S=1V 0.6 0.4 50 0.2 VR(V) 0 tr 1 tp 2 5 10 20 50 100 300 Fig. 2 Relation Variation Of Junction Capacitance Fig.1 Pulse Waveform (5/310us) Versus Reverse Voltage Applied (Typical Values) 100 40 IT(A) Tj=25℃ F=50HZ Tj=25℃ ITSM(A) 30 20 10 t(s) VT(V) 0 10 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Fig.3 Non Repetitive Surge Peek On-State Current Versus Overload Duration 2.0 IH(TJ)/IH[Tj=25℃] 1.0 Tj(℃) 0 -40 -20 0 20 40 60 80 100 120 130 1 2 3 4 5 6 7 8 Fig.4 On-State Voltage Versus On-State Current (Typical Values) 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -40 VBO[Tj]/V BO[Tj=25℃] Tj(℃) -20 0 20 40 60 80 100 120 130 Fig.6 Relative Variation of Break Over Voltage Versus Junction Temperature Fig.5 Relative Variation of Hold Current Versus Junction Temperature Revision B1 0 3  service@jy-electronics.com.cn  www.jy-electronics.com.cn P3100SB Thyristors Solid Protection Device Typical electrical characterist applications Rating and Characteristics Curves 1.E+03 1.0 IR[Tj]/IR[Tj=25℃] ZTH(j-a)/RTH(j-a) 0.9 VR=243V 0.8 0.7 1.E+02 0.6 0.5 0.4 1.E+01 0.3 0.2 Tj(℃) 1.E+00 25 50 75 Tp(s) 0.1 0 100 125 Fig.7 Relative Variation Of Leakage Current Versus Reverse Voltage (Typical Values) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Fig.8 Variation Of Thermal Impedance Junction To Ambient Versus Pulse Duration SOLDERING PARAMETERS Reflow Condition +150℃ -Temperature Max(Ts(max)) +200℃ TP -Time (Min to Max) (ts) 60-180 secs. TL 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max -Temperature(TL)(Liquid us) +217℃ -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed +260℃ Revision B1 tp Critical Zone TL to TP Ramp-up tL TS(max) Average ramp up rate (Liquid us Temp (TL)to peak) Reflow Reflow condition -Temperature Min (Ts(min)) 4 Temperature Pre Heat Pb-Free assembly Ramp-down Preheat TS(min) 25 ts time to peak temperatue (t 25℃ to peak) Time  service@jy-electronics.com.cn  www.jy-electronics.com.cn P3100SB Thyristors Solid Protection Device Package information SMB SMB Mechanical Data  Case: SMB  Case Material: Molded Plastic. UL Flammability  Classification Rating 94V-0  Weight: 0.003 ounces, 0.096 gram C Millimeters Inches B A DIM G G D F E B Min Nom Max Min Nom Max A 3.30 3.62 3.94 0.130 0.142 0.155 B 1.95 2.08 2.20 0.077 0.082 0.087 C 4.06 4.40 4.57 0.160 0.173 0.180 D 0.125 0.20 0.305 0.005 0.008 0.012 E 0.76 1.14 1.52 0.030 0.045 0.06 F 4.95 5.40 5.59 0.194 0.213 0.22 G 2.05 2.30 2.50 0.080 0.090 0.098 SMB SMB Reel Dim E P0 K P2 D T W F D1 A0 B0 B1 K0 P1 A0 B0 B1 D D1 E F K0 T W P0 P1 P2 4.0 5.9 6.1 1.5 1.5 1.75 5.5 3.0 0.50 12.0 4.0 8.0 2.0 Dimension is in mm Leader and Trailer Direction of Feed Tape Leader No Components 30 components in length Components Tape Trailer (Connected To Reel Hub) No Components 50 components in length The LEADER is a minimum of 30 components in length and it consists of empty cavities with sealed cover tape The TRAILER is a minimum of 50 components in length and it consists of empty cavities with sealed cover tape. Revision B1 5  service@jy-electronics.com.cn  www.jy-electronics.com.cn P3100SB Thyristors Solid Protection Device Marking Codes P3100 P3100 OR XXXYY XXXYY Note: (1) "P3100" is part number,fixed. (2) "XXX" is the last 3 characters of the wafer's Lot No., "YY" is internal code. Ordering Information Device Qty per Reel Reel Size P3100SB 3000 13 Inch Revision B1 6  service@jy-electronics.com.cn  www.jy-electronics.com.cn
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