瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
●
低浪涌电阻
●
优异的箝位性能
●
小型化紧凑封装，内部结构去应力设计
●
12 V 以上电压规格对应漏电典型值低于1.0 μA
●
重复率0.01% 的10/1000 μS 波形对应峰值脉冲功率 600 W
●
表贴应用，节约空间
●
典型的故障模式为电压或电流超过额定而导致的短路
●
IEC 61000-4-2 ESD 30 kV (空气)，30 kV (接触)
●
数据线EFT保护符合IEC 61000-4-4
●
快速响应时间
瞬态抑制二极管 (TVS) 是一种电路保护元件，它可以削
●
玻璃钝化保护
弱或过滤突增的瞬态电压(过压)，在浪涌到来瞬间几纳
●
回流焊高温保证:260 °C/30 s
秒时间内发生雪崩击穿，将浪涌电流引至接地端，并将
●
温度系数典型值0.1%
电压箝位在安全范围内，从而实现了高效能的电压保
●
密封材料阻燃等级V-0
护。
●
湿度敏感等级符合MSL 等级1
TVS
概述 Description
●
引脚镀锡
Transient Voltage Suppressor (TVS) is a circuit
●
无卤素，符合RoHS要求
protection component that either attenuates (reduces)
●
or filters a transient voltage spike (overvoltage), TVS
无铅E3：二级互连引线无铅，端子镀锡(Sn) (IPC/JEDEC J-STD609A.01)
diodes provide critical protection by going into
●
Low incremental surge resistance
avalanche breakdown within no more than a few
●
Excellent clamping capability
nanoseconds after a strike, clamping the transient
●
Low profile package with built-in strain relief for surface mounted
voltage, and routing its current to the ground.
应用 Applications
applications
●
Typical IR less than 1.0 μA above 12 V
●
600 W peak pulse power capability with a 10/1000 μS Waveform,
repetition rate (duty cycle): 0.01%
●
For surface mounted applications to optimize board space
●
Low profile package，Built-in strain relief
●
通信设备
Communication Equipment
●
安防
Security & Protection
●
工控设备
Industrial Control Equipment
●
Typical failure mode is short from over-specified voltage or current
●
电源
Power Supply
●
IEC 61000-4-2 ESD 30 kV (Air), 30 kV (Contact)
●
汽车电子
Automotive Electronics
●
EFT protection of data lines in accordance with IEC 61000-4-4
●
新能源设备
New Energy
●
Very fast response time
●
防雷保护
Lightning Protection
●
Glass passivated chip junction
●
High temperature to reflow soldering guaranteed: 260
°C/30sec
功能图 Functional Diagram
●
(αT:Temperature Coefficient, typical value is 0.1%)
●
负极
Cathode
正极
Anode
单向 Uni-Directional
双向 Bi-Directional
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VBR @ TJ= VBR@25 °C x (1+αT x (TJ - 25))
Plastic package is flammability rated V-0 per Underwriters Laboratories
●
Meet MSL level1, per J-STD-020
●
Matte tin lead–free plated
●
Halogen free and RoHS compliant
●
Pb-free E3 means 2nd level interconnect is Pb-free and the terminal
finish material is tin(Sn) (IPC/JEDEC J-STD-609A.01)
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1
TVS
特性 Features
瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
封装尺寸 Package Outline Dimensions (DO-214AA)
W1 W
L
H
D
T
L2
TVS
L1
A
E
B
安装布局
(Mounting Pad Layout)
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C
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Symbol
英制(英寸)
Inches
Min.
Max.
Min.
Max.
L
4.060
4.750
0.160
0.187
W
3.300
3.940
0.130
0.155
W1
1.930
2.200
0.076
0.086
H
1.990
2.610
0.078
0.103
T
0.152
0.305
0.006
0.012
L1
5.210
5.590
0.205
0.220
L2
0.760
1.520
0.030
0.060
D
-
0.203
-
0.008
A
-
2.740
-
0.107
B
2.160
-
0.085
-
C
2.160
-
0.085
-
E
2.260
-
0.089
-
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2
TVS
公制(毫米)
Millimeters
符号
瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
额定参数与特性 Maximum Ratings and Characteristics
参数
Parameter
符号
Symbol
值
Value
单位
Unit
PPPM
600
W
10/1000 μS波形(1)(2)(图4)的峰值脉冲功耗(图2)(注1)、(注2)-双芯片器件(5)
Peak Power Dissipation (Fig2) with a 10/1000 μS waveform(1)(2)(Fig.4)-Stacked Die Parts(5)
PPPM
800
W
峰值功耗 ,无限散热，TL=50 °C
Peak Power Dissipation on Infinite Heat Sink at TL=50 °C
PD
5.0
W
IFSM
100
A
正向瞬态峰值电压 @ IF=50 A ，仅适用于单向产品
Maximum Instantaneous Forward Voltage at 50 A for Unidirectional Only(4)
VF
3.5/5.0
V
工作温度范围
Operating Temperature Range
TJ
-65 to 150
°C
存储温度范围
Storage Temperature Range
TSTG
-65 to 175
°C
热阻(结至引线)
Typical Thermal Resistance Junction to Lead
RθJL
20
°C/W
热阻(结至环境)
Typical Thermal Resistance Junction to Ambient
RθJA
100
°C/W
10/1000 μS脉冲波形(1)(2)(图4)下，峰值脉冲功耗 (图2)-单芯片器件
Peak Power Dissipation（Fig.2)- with a 10/1000 μS waveform(1)(2)(Fig.4)-Single Die Parts
TVS
正向脉冲电流峰值(3),额定负载叠加8.3 ms 单半正弦波测得(JEDEC方法)
Peak Forward Surge Current,8.3ms single half sinewave superimposed on rated load
(JEDEC Method)(3)
注释 Notes
1.
2.
3.
4.
5.
参照图4非重复性脉冲电流波形，初始结温25 °C 以图3所示曲线降额（环境温度TA=25 ℃ ）。
Non-repetitive current pulse, per Fig. 4 and derated above TJ (initial)=25 °C per Fig.
测试安装于5.0 mm 2 焊盘。
Mounted on 5.0 mm 2 land areas.
叠加波形为8.3 ms单个半周期正弦波或等幅方波 , 最长周期4次/min。
Measured of 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute
单芯片VF< 3.5 V，叠层芯片VF< 5.0 V。
VF < 3.5 V for single die parts and VF< 5.0 V for stacked-die parts.
双芯片产品的详细信息，请参阅电气特性中以*标示的部件编号。
For stacked die component details, please refer to models marked with * in electrical characteristics table.
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3
TVS
(除另有注释，默认TA=25 ℃ Ratings at 25 °C ambient temperature unless otherwise specified.)
瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
型号规则 Part Numbering System
SMBJ
XX
C
A
产品系列 Product Series
反向关断电压
Reverse Stand-off Voltage
C: 双向 Bi-directional
None: 单向 uni-direction
TVS
TVS
5% VBR 电压容差
5% VBR Voltage tolerance
标记 Marking
阴极线
Cathode Band
SET
SET
XXX
YMXXX
YMXXX
商标
Trademark
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XXX
日期代码 Data Code
标记代码
Marking Code
商标
Trademark
日期代码 Data Code
Y-年 Year
Y-年 Year
M-月 Month
M-月 Month
XXX-批次号 Lot code
XXX-批次号 Lot code
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标记代码
Marking Code
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瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
术语 Glossary
项目
Item
描述
Description
箝位电压 Clamping Voltage
VC
TVS在低差阻区域内的电压，用于限制设备两端的电压。
Voltage across TVS in a region of low differential resistance that serves to limit the voltage across the device
terminals.
TVS
VR
TVS 在没有导通状态下最高电压。
Maximum voltage that can be applied to the TVS without operation.
注：也用VWM（最高直流工作电压）表示，也称为截止电压(Vso)。
NOTE : It is also shown as VWM (maximum working voltage (maximum d.c. voltage)) and known as rated standoff voltage (Vso).
反向漏电流 Reverse Leakage Current
IR
量测VR的电流。
Current measured at VR.
注：也用ID 待机电流表示。
NOTE : Also shown as ID for stand-by current.
击穿电压 Breakdown Voltage
VBR
在击穿区以指定电流IT (测试电流)通过TVS的电压。
Voltage across TVS at a specified current IT (test current) in the breakdown region.
额定随机重复峰值脉冲电流 Rated Random Recurring Peak Impulse Current
IPPM
施加在设备上的随机重复峰值脉冲电流的最大额定值。
Maximum-rated value of random recurring peak impulse current that may be applied to a device.
额定平均功率 Rated Average Power Dissipation
PM(AV)
所有电源(包括瞬态电流和待机电流)在短时间内平均产生的最大额定功耗。
Maximum-rated value of power dissipation resulting from all sources, including transients and standby current,
averaged over a short period of time.
额定随机重复峰值脉冲功率 Rated Random Recurring Peak Impulse Power Dissipation
PPPM
额定随机重复峰值脉冲电流(IPPM) 和规定的最大箝位电压(VC)乘积的最大额定值。
Maximum-rated value of the product of rated random recurring peak impulse current (IPPM) multiplies by specified
maximum clamping voltage (VC).
电容 Capacitance
CJ
在规定的频率和电压下所测量的TVS电容。
Capacitance across the TVS measured at a specified frequencyx and voltage.
—(GB-T 18802.321 / IEC 61643-321 / JESD210A)
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5
TVS
反向关断电压 Reverse Stand-off Voltage
瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
项目
Item
描述
Description
正向浪涌峰值电压 Peak Forward Surge Voltage
VFS
在指定的正向浪涌电流(IFS)和持续时间下，通过TVS的峰值电压。
Peak voltage across TVS for a specified forward surge current (IFS) and time duration.
注：也用VF 表示。
NOTE : Also shown as VF.
正向浪涌电流 Forward Surge Current
在正向导通区域通过TVS的脉冲电流。
Pulsed current through TVS in the forward conducting region.
注：也用IF表示。
NOTE : Also shown as IF.
击穿电压温度系数 Temperature Coefficient of Breakdown Voltage
αV(BR)
击穿电压的变化与温度变化的比值。
The change of breakdown voltage divided by the change of temperature.
峰值脉冲电流 Peak pulse Current
IPP
施加在TVS上的峰值脉冲电流，以确定箝位电压VC 的特定波形。
Peak pulse current value applied across the TVS to determine the clamping voltage VC for a specified wave shape.
脉冲直流测试电流 Pulsed D.C. Test Current
IT
测量击穿电压VBR的试测试电流。该电流值由制造商确定，通常以脉冲持续时间小于40 ms的毫安级电流给出。
Test current for measurement of the breakdown voltage VBR. This is defined by the manufacturer and usually
given in milliamperes with a pulse duration of less than 40 ms.
注：也用IBR表示。
NOTE : Also shown as IBR .
—(GB-T 18802.321 / IEC 61643-321 / JESD210A)
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6
TVS
TVS
IFS
瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
型号
Part Number
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
Uni
Bi
Uni
Bi
SMBJ5.0A
SMBJ5.0CA
KE
AE
6.4
SMBJ6.0A
SMBJ6.0CA
KG
AG
SMBJ6.5A
SMBJ6.5CA
KK
SMBJ7.0A
SMBJ7.0CA
SMBJ7.5A
Max
反向关断
最大反向
最大峰值
最大箝位
电流
电压
Test
Reverse
Current Stand-off
IT
Voltage
VR
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak
Pulse
Current
IPP
电压
Max.
Clamping
Voltage
VC@IPP
(mA)
(V)
(μA)
(A)
(V)
7
10
5
800
65.3
9.2
6.67
7.37
10
6
800
58.3
10.3
AK
7.22
7.98
10
6.5
500
53.6
11.2
KM
AM
7.78
8.6
10
7
200
50
12
SMBJ7.5CA
KP
AP
8.33
9.21
1
7.5
100
46.6
12.9
SMBJ8.0A
SMBJ8.0CA
KR
AR
8.89
9.83
1
8
50
44.2
13.6
SMBJ8.5A
SMBJ8.5CA
KT
AT
9.44
10.4
1
8.5
20
41.7
14.4
SMBJ9.0A
SMBJ9.0CA
KV
AV
10
11.1
1
9
10
39
15.4
SMBJ10A
SMBJ10CA
KX
AX
11.1
12.3
1
10
5
35.3
17
SMBJ11A
SMBJ11CA
KZ
AZ
12.2
13.5
1
11
1
33
18.2
SMBJ12A
SMBJ12CA
LE
BE
13.3
14.7
1
12
1
30.2
19.9
SMBJ13A
SMBJ13CA
LG
BG
14.4
15.9
1
13
1
28
21.5
SMBJ14A
SMBJ14CA
LK
BK
15.6
17.2
1
14
1
25.9
23.2
SMBJ15A
SMBJ15CA
LM
BM
16.7
18.5
1
15
1
24.6
24.4
SMBJ16A
SMBJ16CA
LP
BP
17.8
19.7
1
16
1
23.1
26
SMBJ17A
SMBJ17CA
LR
BR
18.9
20.9
1
17
1
21.8
27.6
SMBJ18A
SMBJ18CA
LT
BT
20
22.1
1
18
1
20.6
29.2
SMBJ20A
SMBJ20CA
LV
BV
22.2
24.5
1
20
1
18.6
32.4
SMBJ22A
SMBJ22CA
LX
BX
24.4
26.9
1
22
1
16.9
35.5
SMBJ24A
SMBJ24CA
LZ
BZ
26.7
29.5
1
24
1
15.5
38.9
SMBJ26A
SMBJ26CA
ME
CE
28.9
31.9
1
26
1
14.3
42.1
SMBJ28A
SMBJ28CA
MG
CG
31.1
34.4
1
28
1
13.3
45.4
SMBJ30A
SMBJ30CA
MK
CK
33.3
36.8
1
30
1
12.4
48.4
SMBJ33A
SMBJ33CA
MM
CM
36.7
40.6
1
33
1
11.3
53.3
SMBJ36A
SMBJ36CA
MP
CP
40
44.2
1
36
1
10.4
58.1
SMBJ40A
SMBJ40CA
MR
CR
44.4
49.1
1
40
1
9.3
64.5
SMBJ43A
SMBJ43CA
MT
CT
47.8
52.8
1
43
1
8.7
69.4
SMBJ45A
SMBJ45CA
MV
CV
50
55.3
1
45
1
8.3
72.7
SMBJ48A
SMBJ48CA
MX
CX
53.3
58.9
1
48
1
7.8
77.4
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(V)
测试
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7
TVS
电气特性 ( 除另有注释，默认TA=25 ℃ )
Electrical Characteristics (TA=25 °C unless otherwise noted )Table 1
瞬态抑制二极管 TVS Diodes
型号
Part Number
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
Uni
Bi
Uni
Bi
SMBJ51A
SMBJ51CA
MZ
CZ
56.7
SMBJ54A
SMBJ54CA
NE
DE
SMBJ58A
SMBJ58CA
NG
SMBJ60A
SMBJ60CA
SMBJ64A
Max
(V)
测试
反向关断
最大反向
最大峰值
最大箝位
电流
电压
Test
Reverse
Current Stand-off
IT
Voltage
VR
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak
Pulse
Current
IPP
电压
Max.
Clamping
Voltage
VC@IPP
(mA)
(V)
(μA)
(A)
(V)
62.7
1
51
1
7.3
82.4
60
66.3
1
54
1
6.9
87.1
DG
64.4
71.2
1
58
1
6.5
93.6
NK
DK
66.7
73.7
1
60
1
6.2
96.8
SMBJ64CA
NM
DM
71.1
78.6
1
64
1
5.9
103
SMBJ70A
SMBJ70CA
NP
DP
77.8
86
1
70
1
5.3
113
SMBJ75A
SMBJ75CA
NR
DR
83.3
92.1
1
75
1
5
121
SMBJ78A
SMBJ78CA
NT
DT
86.7
95.8
1
78
1
4.8
126
SMBJ85A
SMBJ85CA
NV
DV
94.4
104
1
85
1
4.4
137
SMBJ90A
SMBJ90CA
NX
DX
100
111
1
90
1
4.1
146
SMBJ100A
SMBJ100CA
NZ
DZ
111
123
1
100
1
3.7
162
SMBJ110A
SMBJ110CA
PE
EE
122
135
1
110
1
3.4
177
SMBJ120A
SMBJ120CA
PG
EG
133
147
1
120
1
3.1
193
SMBJ130A
SMBJ130CA
PK
EK
144
159
1
130
1
2.9
209
SMBJ150A
SMBJ150CA
PM
EM
167
185
1
150
1
2.5
243
SMBJ160A
SMBJ160CA
PP
EP
178
197
1
160
1
2.3
259
SMBJ170A
SMBJ170CA
PR
ER
189
209
1
170
1
2.2
275
SMBJ180A
SMBJ180CA
PT
ET
201
222
1
180
1
2.1
292
SMBJ188A
SMBJ188CA
PB
EB
209
231
1
188
1
2
304
SMBJ200A
SMBJ200CA
PV
EV
224
247
1
200
1
1.9
324
SMBJ220A
SMBJ220CA
PX
EX
246
272
1
220
1
1.7
356
SMBJ250A
SMBJ250CA
PZ
EZ
279
309
1
250
1
1.5
405
SMBJ300A*
SMBJ300CA*
QE
FE
335
371
1
300
1
1.7
486
SMBJ350A*
SMBJ350CA*
QG
FG
391
432
1
350
1
1.5
567
SMBJ400A*
SMBJ400CA*
QK
FK
447
494
1
400
1
1.3
648
SMBJ440A*
SMBJ440CA*
QM
FM
492
543
1
440
1
1.1
713
注释 Notes:
1.对于VR为10 V及更低的双向产品，IR值需乘以两倍。
For bidirectional type having VR of 10 volts and less, the IR should be doubled.
2.对于没有A的产品，VBR范围为±10%且VC也比有A的产品高5%，当前不推荐没有A的产品用于新设计，带A的产品推荐优先选用。
For parts without A in the PN, the VBR tolerance is ± 10% and VC is 5% higher than parts with A. The parts without A are currently
available, but not recommended for new designs. The parts with A are preferred.
3.双芯片产品的详细信息，请参阅电气特性中以*标示的部件编号 。
For stacked die component details, please refer to models marked with * in electrical characteristics table.
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8
TVS
SMBJ Series
Transient Voltage Suppression Diodes
瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
伏安特性曲线 I-V Curve Characteristics
IF
单向
Uni-directional
VC
双向
Bi-directional
VBR VWM
VC VBR VWM
ID VF
IT
IPP
IT
ID
ID
IT
IPP
脉冲峰值功率 PPPM - Peak Pulse Power (KW)
电压/电流 Voltage or Current
Voltage Transient
Voltage Across TVS
Current Through TVS
Time
100
TJ (initial)=Tamb
Stacked die,800W
At 10×1000µs,25 °C
10
Signal die,600W
At 10×1000µs,25 °C
1.0
0.1
60
40
20
0
0
25
50
75
100
120
150
175
0.1
1
10
td – 脉宽 Pulse Width (ms)
FIGURE 2 峰值脉冲功率额定曲线
Peak Pulse Power Rating Curve
IPPM - 峰值脉冲电流 Peak Pulse Current, % IRSM
80
0.01
0.001
FIGURE 1 TVS瞬态箝位波形
TVS Transients Clamping Waveform
100
TVS
参考性能曲线(除有另外注释，默认TA=25 ℃ )
Performance Curve for Reference(TA=25 °C unless otherwise noted)
降额百分比 Peak Pulse Power (PPP) or
Current (IPPM) Derating in Percentage, %
TVS
IPP
VWM VBR VC
TJ –初始结温 Initial Junction Temperature (°C )
150
Tr=10μs
TJ = 25 °C Pulse Width
(td) is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
100
Half Value
IPPM/2
10/1000 μs Waveform
as defined by R.E.A.
50
td
0
0
1.0
2.0
3.0
4.0
t –时间 Time (ms)
FIGURE 3 峰值脉冲功率降额曲线
Peak Pulse Power Derating Curve
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FIGURE 4 脉冲波形 Pulse Waveform
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瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
Uni-direction at Zero-bias
1000
电容 CJ –(pF)
Bi-direction at
Zero-bias
100
Bi/Uni direction at
10
VR-bias
1
TVS
1
10
100
1000
100
10
1
0.1
0.01
0.001
0.01
0.1
VBR – 反向击穿电压 Reverse Breakdown Voltage (V)
10
100
1000
TP – 脉宽 Pulse Duration (s)
FIGURE 5 典型结电容 Typical Junction Capacitance
FIGURE 6 典型瞬态热阻 Typical Transient Thermal Impedance
120
100.0
IF– 正向峰值电流 Peak Forward Current (A)
IFSM - 正向浪涌峰值电流 Peak Forward Surge Current (A)
1
TVS
瞬态热阻 Transient Thermal Impedance (°C /W)
10000
100
80
60
40
20
0
1
10
100
Single die
Stacked die
10.0
1.0
0.1
0.0
1.0
2.0
60 Hz周波数 Number of Cycles at 60 Hz
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VF– 正向峰值电压 Peak Forward Voltage (V)
FIGURE 7 最大非重复正向浪涌电流(单向型)
FIGURE 8 峰值正向电压及电流(典型值)
Maximum Non-Repetitive Forward Surge Current
Peak Forward Drop vs Peak Forward Current (Typical Values)
Uni-Directional only
环境特性 Environmental Specifications 物理特性 Physical Specifications
高温存储
High Temp. Storage
JESD22-A103
高温反偏 HTRB
JESD22-A108
温度循环
Temperature Cycling
JESD22-A104
湿度敏感性等级 MSL
JESDEC-J-STD-020, Level 1
高温高湿反偏 H3TRB
JESD22-A101
耐焊接热 RSH
JESD22-A111
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重量
Weight
0.003 ounce,0.093 grams
封装
Case
JESD22DO214AA. Molded plastic body
极性
Polarity
Color band denotes positive end
端子
Terminal
Matte Tin-plated leads, Solderability per
over glass passivated junction
(cathode) except Bidirectional
JESD22-B102
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瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
焊接参数 Soldering Parameters
tP
TP
Ramp-up
tL
TS (max)
TS (min)
Ramp-down
tS
Preheat
TVS
温度 Temperature (T)
TL
TVS
Critical Zone
TL to TP
25°C
t 25°C to Peak
时间 Time (t)
回流焊条件 Reflowing Condition
回流焊接参数
Reflow Soldering Parameters
预热 Pre-heat
无铅组装
Lead-Free Assembly
最低温(TS (min))
Temperature Min (TS (min))
150 °C
最高温(TS (max))
Temperature Max (TS (max))
200 °C
升温时长(tS)
Time (min to max) (tS)
60 ~ 120 seconds
平均升温速率(液相温度(TL)至峰值温度(TP))
3 °C / second max.
Average Ramp-up Rate ( Liquidus Temp (TL) to Peak Temp (TP))
TS (max) 到TL升温速率
3 °C / second max.
TS (max) to TL Ramp-up Rate
温度 Temperature (TL) (Liquidus)
回流 Reflow
时长 Time (min to max) (tL)
实际峰值温度 (tP) 5 °C 以内的时间
Time of within 5 °C of Actual Peak Temperature (tP)
降温速率 Ramp-down Rate
8 Minutes max.
260 °C
极限温度 Do Not Exceed
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20 ~ 40 seconds
6 °C / second max.
25 °C 至峰值温度时长 Time from 25 °C to Peak Temperature
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60 ~ 150 seconds
260+0/-5 °C
峰值温度 Peak Temperature (TP)
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217 °C
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瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
编带 Tape
P2
P0
T
B0
W
F
E
D0
TVS
D1
A0
符号
Symbol
尺寸
Dimension (mm)
W
12.00+0.30/-0.10
P0
4.00±0.10
P1
8.00±0.10
P2
2.00±0.05
D0
1.55±0.05
D1
1.55±0.05
E
1.75±0.1
F
5.50±0.05
A0
3.78±0.10
B0
5.65±0.15
K0
2.70±0.10
T
0.30±0.05
P1
K0
卷盘尺寸 Reel Size
13寸卷盘 13” Reel
A
A
330 mm
C
13.2 mm
W1
12.5 mm
C
Arbor hole Dia.
Direction of Feed
W1
型号
Part Number
封装
Package
卷盘数量QTY
(Reel)
包装选项
Packaging Option
包装规格
Packaging Specification
SMBJ×××
DO-214AA
3000 PCS
Tape & Reel – 12 mm tape/13” reel
EIA STD RS-481
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12
TVS
包装信息 Packaging Information
瞬态抑制二极管 TVS Diodes
SMBJ Series
TVS
TVS
Transient Voltage Suppression Diodes
注意
ATTENTION
使用方法 Usage
1.
2.
3.
请在规定的温度范围内使用TVS。
TVS must be operated in the specified ambient temp.
请勿使用强极性溶剂清洗TVS以免破坏封装层。
Do not clean the TVS with strong polar solvent such as ketone, esters, benzene and halogenated hydrocarbon, to avoid
damaging the encapsulating layer.
请勿对TVS施加剧烈的振动，冲击或压力，以避免元件开裂。
Please do not apply severe vibration, shock or pressure to TVS, to avoid element cracking.
更换 Replacement
1.
2.
若TVS出现可视化损伤，请将其更换。
If TVS is visually damaged, please replace it.
TVS为非修理型产品，安全起见，请更换同等规格的TVS。
TVS is a non-repairable product. For safety sake, please use equivalent TVS for replacement.
存储 Storage
1.
存储温度范围。
Storage Temp. Range: (-55 to 150) °C.
2.
请勿将TVS存放于高温高湿或腐蚀性气体环境中，已避免影响引脚的焊接性能，请于收货后一年内进行使用 。
Do not store the TVS at the high temp., high humidity or corrosive gas environment, to avoid influencing the solder-ability
of the lead wires. The product shall be used up within 1 year after receiving the goods.
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瞬态抑制二极管 TVS Diodes
SMBJ Series
Transient Voltage Suppression Diodes
环境条件 Environmental Conditions
1.
2.
3.
请勿暴露于室外阳光直射环境。
TVS should not be exposed to the open air, nor direct sunshine.
请避免雨水，水汽等高温高湿环境。
TVS should avoid rain, water vapor or other condition of high temp. and high humidity.
请避免沙尘，盐雾等有害环境。
TVS should avoid sand dust, salt mist, or other harmful gases.
TVS最大典型结电容 Max. Typical Capacitance of TVS
高频线路应用中请参照规格书中所给出的典型电容曲线。
The typical capacitance of TVS is listed in the specifications. Designers may refer to it when designing TVS in high frequency
circuit.
1.
安装TVS时请避免敲击，防止物理损伤。
TVS
TVS
安装机械应力 Installation Mechanical Stress
Do not knock TVS when installing, to avoid mechanical damage.
2.
请不要对 TVS 施加剧烈的振动、冲击或压力，以免表面树脂或元件破裂。
Please do not apply severe vibration, shock or pressure to TVS, to avoid surface resin or element cracking.
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