SPD8811B-2/TR

SPD8811B SPD8811B http//:www.sh-willsemi.com 1-Line,Bi-directional, Thyristor Surge Suppressors Descriptions The SPD8811B is a bi-directional TSS (Thyristor Surge Suppressors) which can provide ESD protection for IC. It is specifically designed to protect telecom equipments from damaging overvoltage transients. The SPD8811B is used to enable equipments to meet SMB (DO-214AA) various regulatory requirements including, ITU-T K.20, K.21 and IEC 61000-4-5 The SPD8811B is available in SMB package. Standard products are Pb-free and Halogen-free. Features  Peak off-state voltage: ±58V Max  Excellent capability of absorbing transient surge  Quick response to surge voltage  Eliminate voltage overshoot caused by fast-rising Schematic Diagram transients  Low leakage current:  Solid-state silicon technology, non degenerative 8811B Applications  Audio/Video line  Network and telecom  Data lines and security systems  Serial ports  BNC interface  DVR AAYW AA = Device code Y = Year code W = Week code Marking (Top View) Order information Will Semiconductor Ltd. 1 Device Package Shipping SPD8811B-2/TR SMB 3000/Tape&Reel Revision 1.4, 2017/11/16 SPD8811B Absolute maximum ratings Parameter Junction temperature Operating temperature Symbol Rating TJ -40~150 o -40~125 o -55~150 o TL 260 o RθJA 90 TOP Storage temperature TSTG Lead temperature Junction to ambient thermal resistance Unit C C C C o C/W Electrical characteristics (TA=25 oC, unless otherwise noted) 1) VDRM IDRM VS VBR V μA V V Max. Max. Min. 1 77 60 Part Number SPD8811B 58 2) IS IH VT IT CO mA mA V A pF Max. Max. 150 4 800 Typ. 2.2 50 Notes: 1) VBR is measured at IBR=1mA. 2) Off-state capacitance is measured at f = 1MHz, VDC = 2V. Surge Ratings Part Number SPD8811B 8/20μs 1) 1.2/50μs 400 A 2) 5/320μs 1) 10/700μs 2) 2/10μs 1) 2/10μs 2) 6000 V 500 A Notes: 1) Current waveform. 2) Voltage waveform. Will Semiconductor Ltd. 2 Revision 1.4, 2017/11/16 SPD8811B o IPP - Peak Pulse Current - %IPP Typical characteristics (TA=25 C, unless otherwise noted) I IDRM Peak off-state current VS Switching voltage IS Switching current IH Holding current VT On-state voltage IT On-state current Peak Value 100 VDRM Peak off-state voltage IT IS IH IDRM VT VDRM VS V tr = rise time to peak value td = decay time to half value Waveform = tr × td Half Value 50 0 Definitions of electrical characteristics td tr t-Time (μs) Peak pulse current waveform 10 2.00 1.75 6 Ratio of IH/IH(TC=25℃) Percent of VS Change - % 8 4 2 25℃ 0 -2 1.25 25℃ 1.00 0.75 0.50 -4 -6 1.50 -25 0 25 50 75 100 125 0.25 150 Junction Temperature(TJ) - ℃ 0 25 50 75 100 125 150 Case Temperature(TC) - ℃ Normalized VS Change vs. Junction Temperature Will Semiconductor Ltd. -25 Normalized Holding Current vs. Case Temperature 3 Revision 1.4, 2017/11/16 SPD8811B Package outline dimensions SMB Symbol Dimensions in millimeter Min. Typ. Max. A 4.30 4.50 4.70 B 3.30 3.50 3.70 C 2.00 2.15 2.30 D 5.05 5.30 5.55 E 0.10 0.20 0.30 F 0.95 1.25 1.55 G 0.20 Max. H 2.10 2.30 2.50 I 1.85 2.00 2.15 Recommend land pattern (Unit: mm) Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 4 Revision 1.4, 2017/11/16