BEPxxxxSC
Features
◆ Bi-directional crowbar transient voltage protection
◆ High surge capability
◆ High off-state impedance
◆ Low leakage current
◆ Low on-state voltage
◆ Short-circuit failure mode
DO-214AA(SMB)
Main Application
BORN’s thyristor surge protector devices are desi
gned to help protect sensitive telecommunication
equipment from the hazards caused by lighning ,power contact,and power induction. These devices
enable equipment to comply with various regulatory requirements including GR 1089,ITU
K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).
Typical application including:
● Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)
● Customer Premises Equipment(CPE)such as phones, fax machines,modems,POS terminals,
●
●
●
●
●
PBX systems and caller ID adjunct boxes.
Primary protection modules including Main Distribution Frames(MDF),building
entrance equipment and station protection modules.
Access
network
equipment
such
as
remote
terminals,line
repeaters,multiplexers,cross-connects,WAN
equipment,Network
Interface
Devices(NID).
Data lines and security systems.
CATV line amplifiers and power inserters.
Sprinkler systems.
Electrcal Parameters (Tamb=25℃)
VDRM
IDRM
VBO
IBO
VT
IT
CO
`IH
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Min.
V
uA
V
mA
V
A
pF
mA
BEP0080SC
6
5
25
800
4
2.2
100
50
BEP0300SC
25
5
40
800
4
2.2
100
50
BEP0640SC
58
5
77
800
4
2.2
85
150
BEP0720SC
65
5
88
800
4
2.2
85
150
BEP0900SC
75
5
98
800
4
2.2
70
150
BEP1100SC
90
5
130
800
4
2.2
70
150
Part
Number
Page 1 of 4
BEPxxxxSC
VDRM
IDRM
VBO
IBO
VT
IT
CO
`IH
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Min.
V
uA
V
mA
V
A
pF
mA
BEP1300SC
120
5
160
800
4
2.2
70
150
BEP1500SC
140
5
180
800
4
2.2
55
150
BEP1800SC
170
5
220
800
4
2.2
55
150
BEP2000SC
180
5
220
800
4
2.2
55
150
BEP2300SC
190
5
260
800
4
2.2
50
150
BEP2600SC
220
5
300
800
4
2.2
50
150
BEP3100SC
275
5
350
800
4
2.2
45
150
BEP3500SC
320
5
400
800
4
2.2
35
150
BEP3800SC
360
5
460
800
4
2.2
35
150
BEP4200SC
400
5
540
800
4
2.2
35
150
Part
Number
Eletrical Characteristics
VDRM
Stand-off voltage,is measured at IDRM
IH
Holding current.
VBO
Breakover voltage,is measured at 100V/μs.
IBO
Breadover current.
CO
Off-state capacitance ismeasured in VDC=2V@1MHZ.
IT
ON-state current
VT
On-state voltage.
IDRM Leakage current,is measured at VDRM.
Part Numbering System
BEP
(A)
XXXX
(B)
S
C
(C)
(D)
(A) SH’s Semiconductor Surge Arrester
(B) Series:0080,0300…3500,3800,4200etc.
(C) Pake:SMB(DO-214AA)
(D) Rating Sure Voltage:C:6KV(10/700μs )
Page 2 of 4
BEPxxxxSC
Electrical Characteristics Curves
Figure1 V-I Characteristics
Figure2 tr x td Pulse Wave-form
Figure 3 Normalized VS Change versus
Junction Temperature
Figure 4 Normalized DC Holding Current
Thermal Considerations
Package
DO-214AA/SMB
Symbol
Parameter
Value
Unit
TJ
Operating Junction Temperature
-40 to +150
℃
TS
Storage Temperature Range
-40 to +150
℃
RθJA
Junction to Ambient on printed circuit
90
℃/W
Page 3 of 4
BEPxxxxSC
Solder Reflow Recommendations
●Recommended reflow methods: IR, vapor
phase oven, hot air oven, wave solder.
●The device can be exposed to a maximum
temperature of 265°C for 10 seconds.
●Devices can be cleaned using standard
industry methods and solvents.
Notes: If reflow temperatures exceed the
recommended
profile,
devices may
not meet the performance requirements.
Product Dimensions
B
Dimension
Inches
Millimeters
MIN
MAX
MIN
MAX
A
0.134
0.155
3.40
3.94
B
0.205
0.22
5.21
5.59
C
0.075
0.083
1.90
2.11
D
0.166
0.185
4.22
4.70
E
0.036
0.056
0.91
1.42
F
0.073
0.087
1.85
2.2
G
0.002
0.008
0.05
0.20
H
0.077
0.094
1.95
2.40
J
0.043
0.053
1.09
1.35
K
0.008
0.014
0.20
0.35
L
0.039
0.049
0.99
1.24
D
C
A
H
F
L
E
J
.079
(2.0)
0.110
(2.8)
.079
(2.0)
Page 4 of 4
K
G
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