ST0524D25

R Semitehelec ST0524D25 PROTECTION PRODUCTS Feature: l Application： IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) l IEC61000-4-4 (EFT) 40A (5/50ns) l IEC61000-4-5 (Lightning) 3.5A (8/20μs) l Solid-state silicon-avalanche technology l Up to four I/O lines of protection l Low operating voltage l Ultra low capacitance l Low operating and clamping voltage l Low leakage current l RoHS compliant l l l l l l Digital visual interface(DVI) Display port TM interface MDDI ports PCI express SATA interfaces High definition multi-media interface(HDMI) Circuit Diagram & Pin Configuration:                 Pin configuration    10 9 8 7 6 1 2 3 4 5             DFN2510-10L Top view    DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping ST0524D25 0524P 3000/Tape&Reel Version20100309 1 R Semitehelec ST0524D25 Ordering Information per line@25℃( unless otherwise specified) Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 100 W Peak Pulse Current (tp = 8/20μs) IPP 3.5 A ESD per IEC 61000-4-2 (Air) ±15 KV VESD ESD per IEC 61000-4-2 (Contact) ±8 Junc tion temperature TJ −55 to +125 ℃ Ope rating temperature TOP -55~85 ℃ Lead temperature TL 260 ℃ TSTG -55~150 ℃ Storage temperature Electrical Characteristics per line@25℃( unless otherwise specified) Characteristic Symbol Min Typ Max Unit VRWM — — 5.0 V I/O to GND VBR 6.0 7.5 9.0 V IR = 1mA, I/O to GND Reverse Leakage Current IR — 0.1 1.0 uA VR = 5.0V, I/O to GND Clamping Voltage VC — 9.0 10.0 V IPP = 1A, 8/20µs Clamping Voltage VC — 11.0 12.0 V IPP = 3.5A,8/20µs — 0.5 0.65 Reverse Working Voltage Reverse Breakdown Voltage Junction Capacitance VR = 0V, f = 1MHz, pF CJ — 0.25 0.4 Test Conditions I/O pin to GND VR = 0V, f = 1MHz, Between I/O pins Note: Electrical parameters are only for die, performance may alter after assembly. Version20100309 2 R Semitehelec ST0524D25 Typical Characteristics FIG.1:V- I curve characteristics (Uni-directional) IF FIG.2: Pulse waveform Percent of IPPM I front time: T1 = 1.25×T = 8×(1±20%)μs time to half value: T2 = 20×(1±20%)μs Peak value 100 90 Half value V VC VBR VRWM (8/20μs) IR VF IT 50 IPP 10 0 0 T2 t(μs) T T1 10 20 30 40       FIG.3: Pulse derating curve FIG.4: ESD clamping (8KV contact) PPP derating in percentage(%) 100 Percent of IPPM 100 90 80 30ns 60 60ns 40 20 0 0 25 50 Version20100309 TA(℃) 75 100 125 150 175     10 0 0 t(ns) tr 0.7 to 1ns 30 60   3 R Semitehelec ST0524D25 Dimension (DFN2510-10L) E D Top view A A1 Symbol A2 Side view e b L 1 b1 Bottom view 0.675 1.0 0.5 Max. Min. Max. A 0.50 0.65 0.020 0.026 A1 0.00 0.05 0.000 0.002 0.005REF. 0.15 0.25 0.006 0.010 b1 0.35 0.45 0.014 0.018 D 2.40 2.60 0.094 0.102 E 0.90 1.10 0.035 0.043 e 0.50BSC 0.30 0.425 0.020BSC 0.012 0.017 1.55 0.2 0.875 0.13REF. b L 0.2 Inches Min. A2 2 Millimeter 0.4 Recommended soldering footprint      Version20100309 4 R Semitehelec ST0524D25 NOTICE The information presented in this document is for reference only. Semiteh reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Semiteh Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.semiteh.com , or consult your nearest Semiteh’s sales office for further assistance. Version20100309 5