CI72N170SM

1700V SiC N-Channel MOSFET Features CI72N170SM Package  High Blocking Voltage with Low On-Resistance  High Speed Switching with Low Capacitance  Easy to Parallel and Simple to Drive Benefits  Higher System Efficiency  Reduced Cooling Requirements  Increased Power Density  Increased System Switching Frequency TO-247-3 Applications  Solar Inverters  High Voltage DC/DC Converters  Motor Drives  Switch Mode Power Supplies  Pulsed Power applications Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax Drain-Source Voltage 1700 V VGS=0V, ID=100μA VGSmax Gate-Source Voltage -10/+25 V Absolute maximum values VGSop Gate-Source Voltage -5/+20 V Recommended operational values ID ID(pulse) PD TJ, TSTG 72 Continuous Drain Current 48 A VGS=20V, Tc=25℃ VGS=20V, Tc=100℃ Pulsed Drain Current 160 A Pulse width tp limited by TJmax Power Dissipation 520 W Tc=25℃, TJ=150℃ -55 to +150 ℃ Operating Junction and Storage Temperature www.tokmas.com Note 1700V SiC N-Channel MOSFET CI72N170SM Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit 1700 / / V 2.0 2.6 4.0 / 1.8 / V Test Conditions VGS=0V, ID=100μA VDS=VGS, ID=18mA VDS=VGS, ID=18mA, TJ=150℃ IDSS Zero Gate Voltage Drain Current / 1 100 µA VDS=1700V, VGS=0V IGSS+ Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=25V IGSS- Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=-10V / 45 70 / 90 / / 25.8 / / 27.0 / RDS(on) Drain-Source On-State Resistance gfs Transconductance Ciss Input Capacitance / 3550 / Coss Output Capacitance / 165 / Crss Reverse Transfer Capacitance / 6.1 / Eoss Coss Stored Energy / 101 / EON Turn-On Switching Energy / 3.1 / EOFF Turn-Off Switching Energy / 1.1 / td(on) Turn-On Delay Time / 27 / Rise Time / 32 / Turn-Off Delay Time / 36 / Fall Time / 10 / Internal Gate Resistance / 2.6 / QGS Gate to Source Charge / 54 / QGD Gate to Drain Charge / 25 / QG Total Gate Charge / 193 / Typ. Max. 4.5 / 4.2 / tr td(off) tf RG(int) mΩ S VGS=20V, ID=50A, TJ=150℃ VDS=20V, ID=50 A VDS=20V, ID=50A, TJ=150℃ mJ ns Ω Fig. 4,5,6 Fig. VDS=1000V 15,16 f=1MHz µJ Fig. 11 VGS=20V, ID=50A VGS=0V pF Note VAC=25mV VDS=1200V, VGS=-5V/20V ID=30A, RG(ext)=2.5Ω, L=100μH VDS=1200V, VGS=-5V/20V, ID=30A RG(ext)=2.5Ω, RL=20Ω f=1MHz, VAC=25mV VDS=1200V nC VGS=-5V/20V ID=50A Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Unit V IS Continuous Diode Forward Current / 72 A trr Reverse Recover Time 55 / ns Qrr Reverse Recovery Charge 220 / nC Irrm Peak Reverse Recovery Current 6.7 / A Typ. Max. 0.24 / / 40 Test Conditions VGS=-5V, ISD=25A VGS=-5V, ISD=25A, TJ=150℃ Note Fig. 8,9,10 TC=25℃ VR=1200V, ISD=50A Thermal Characteristics Symbol Parameter RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient www.tokmas.com Unit ℃/W Test Conditions Note 1700V SiC N-Channel MOSFET CI72N170SM Typical Performance Figure 1. Output Characteristics TJ = -40 ºC Figure 3. Output Characteristics TJ = 150 ºC Figure 5. On-Resistance vs. Drain Current Figure 2. Output Characteristics TJ = 25 ºC Figure 4. Normalized On-Resistance vs. Temperature Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage www.tokmas.com 1700V SiC N-Channel MOSFET CI72N170SM Typical Performance Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -40 ºC Various Junction Temperatures Figure 9. Body Diode Characteristic at 25 ºC Figure 11. Threshold Voltage vs. Temperature Figure 10. Body Diode Characteristic at 150 ºC Figure 12. 3rd Quadrant Characteristic at -40 ºC www.tokmas.com 1700V SiC N-Channel MOSFET CI72N170SM Typical Performance Figure 13. 3rd Quadrant Characteristic at 25 ºC Figure 14. 3rd Quadrant Characteristic at 150 ºC Figure 15. Capacitances vs. Drain-Source Figure 16. Capacitances vs. Drain-Source Voltage (0 - 200V) Voltage (0 - 1000V) Figure 17. Gate Charge Characteristic Figure 18. Output Capacitor Stored Energy www.tokmas.com 1700V SiC N-Channel MOSFET CI72N170SM Package Dimensions Package TO-247-3 DIMENSIONS IN MILLMETERS SYMBOLS MIN NOM MAX A 4.9 5 5.1 A1 2.9 3 3.1 A2 2.31 2.36 2.41 b 1.16 1.2 1.26 b1 2.05 - 2.2 b2 3.05 - 3.2 c 0.58 0.6 0.66 D 20.9 21 21.1 D1 16.46 16.56 16.76 D2 1.17 d1 6.05 6.15 6.25 d2 2.2 2.3 2.4 E 15.7 15.8 15.9 E1 10.5 E2 14.02 e - 1.27bcs - L 19.82 19.92 20.02 L1 1.88 1.98 2.08 θ 0° 7° 8° R1 - 2.7 - R2 - 2.5 - Ф1 Ф2 www.tokmas.com 3.6 - 7.19 -