XenCreator
XC8113B
High-Efficiency,3A, 18V, 500KHz Synchronous,Step-Down Converter
FEATURES
GENERAL
DESCRIPTION
The XC8113B is a high-frequency, synchronous, rectified,
step-down, switch-mode converter with internal power
MOSFETs. It offers a very compact solution to achieve a
3A continuous output current over a wide input supply
range, with excellent load and line regulation. The XC8113B
has synchronous-mode operation for higher efficiency
over the output current-load range.
Current-mode operation provides fast transient response and
eases loop stabilization.
Protection features include over-current protection and
thermal shutdown.
The XC8113Brequires a minimal number of readily available,
standard external components and is available in a spacesaving TSOT23-6L package.
● 3.6 Vto 18V input voltage
● Output adjustable from 0.8V to 15V
● Output current up to 3A
● Integrated 110mΩ/58mΩ power MOSFET switches
● Shutdown current 3μA typical
● Efficiency up to 95%
● Fixed frequency 500KHz
● Internal soft start
● Over current protection and Hiccup
● Over temperature protection
● RoHS Compliant and 100% Lead (Pb) Free
APPLICATIONS
● Digital Set-top Box (STB)
● Tablet Personal Computer (Pad)
● Flat-Panel Television and Monitors
● Digital Video Recorder (DVR)
● Portable Media Player (PMP)
● General Purposes
TYPICAL APPLICATIONS
XC8113B
XC8113B v.1.00
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XC8113B
PACKAGE/ORDER INFORMATION
Order Part Num ber
XC811 3B
Packa ge
SOT23-6L
FUNCTIONAL PIN DESCRIPTION
PIN
NAME
TYPE
FUNC TION DESCR IPTIONS
1
BOOT
I
High-Side Gate Drive Boost Input. BOOT supplies the drive for the highside N-Channel MOSFET switch. Connect a 0.1μF or greater capacitor
from SW to BOOT to power the high side switch.
2
GND
I
Ground.
3
FB
I/O
4
EN
G
5
IN
I/O
6
SW
XC8113B v.1.00
I
Feedback Input. FB senses the output voltage to regulate that voltage.
Drive FB with a resistive voltage divider from the output voltage. The
feedback threshold is 0.6V.
Enable Input. EN is a digital input that turns the regulator on or off.
Drive EN high to turn on the regulator, drive it low to turn it off. Pull
up with 100kΩ resistor for automatic startup.
Power Input. IN supplies the power to the IC, as well as the step-down
converter switches. Drive IN with a 4.75V to 18V power source.
Bypass IN to GND with a suitably large capacitor to eliminate noise on
the input to the IC.
Power Switching Output. SW is the switching node that supplies power
to the output. Connect the output LC filter from SW to the output
load. Note that a capacitor is required from SW to BOOT to power the
high-side switch.
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XC8113B
Function Block Diagram
XC811 3B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
ABSOLUTE MAXIMUM RATINGS
UNIT
VIN
-0.3 to 20
V
VSW
-0.3 to VIN+0.3
V
VSW -0.3 to VSW+6
V
VBOOT
-0.3 to 6
V
Continuous Power Dissipation(TA =+25℃)
1.25
W
Junction Temperature
150
°C
Lead Temperature
260
°C
-65 to 150
°C
Thermal Resistance θJA
100
°C /W
Thermal Resistance θJC
55
°C /W
All Other Pins
Storage Temperature
XC8113B v.1.00
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XC8113B
RECOMMENDED OPERATING CONDITIONS
PARAMETER
RECOMMENDED
UNIT
Supply Voltage VIN
3 . 6 to 18
V
0 .6 to VIN-3V
Output Voltage VOUT
V
-40 to 125
Operating Junction Temp.(TJ)
°C
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VIN = +12V, unless otherwise noted.)
PARAMETER
SYMBOL
Supply Voltage
VIN
VOUT
Output Voltage
Shutdown Supply Current
MIN
MAX
UNIT
3.6
18
V
0.8
15
V
6
µA
VEN = 0V
Supply Current
Feedback Voltage
TEST
CONDITIO NS
3
4.75V ≤ VIN ≤ 18V
0.588
High-Side Switch-On Resistance *
Low-side Switch-On Resistance *
V
AEA
1000
V/V
RDS(ON)1
RDS(ON)2
110
58
mΩ
mΩ
VEN = 0V, VSW =
0V, TA = +125°C
Upper Switch Current Limit
Minimum Duty Cycle
Lower Switch Current Limit
From Drain to Source
Oscillation Frequency
FOSC1
Short Circuit Oscillation
Maximum Duty Cycle
FOSC2
DMAX
VFB = 0V
VFB = 0.5V
VEN Falling
VEN Rising
VIN Rising
Soft-Start Period
Thermal Shutdown *
XC8113B v.1.00
0.612
V
High-Side Switch Leakage Current
Minimum On Time *
EN Falling Threshold Voltage
EN Rising Threshold Voltage
Input Under Voltage Lockout
Threshold
Input Under Voltage Lockout
Threshold Hysteresis
0.6
0.88
Feedback Over-voltage Threshold
Error Amplifier Voltage Gain *
mA
0.7
VEN = 2.0V, VFB = 1V
VFB
TYP
- 4-
10
3.7
µA
4.3
A
0
A
600
KHz
400
500
100
125
90
KHz
%
120
1.22
1.32
3.75
ns
V
V
V
200
mV
1
150
ms
°C
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XC8113B
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 12V, VO = 3.3V, L1 = 4.7μH, C1 = 10μF, C2 = 22μF x 2, TA = +25°C, unless otherwise noted.
Start UP & Inrush Current 12V→3.3V (Load 1A)
Shut Down (Iout 1A→Shut down)
Vout
Vout
VEN
VEN
ISW
ISW
Output Ripple (12V => 3.3V, Load=2A)
Output Ripple (12V => 3.3V, Load=1A)
Vout
Vout
ISW
ISW
Dynamic Load (Iload=0.2A_1.2AVout=3.3V)
Output Ripple (12V => 3.3V, Load=0A)
Vout
Vout
ISW
ISW
Short Circuit Protection
Vout
ISW
XC8113B v.1.00
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XC8113B
TYPICAL PERFORMANCE CHARACTERISTICS
Efficiency
XC8113B v.1.00
Efficiency
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XC8113B
Overview
The XC8113B is a synchronous rectified, current-mode, step-down regulator. It regulates input voltages from
4.7V to 18V down to an output voltage as low as 0.8V, and supplies up to 3A of load current.The XC8113B
uses current-mode control to regulate the output voltage. The output voltage is measured at FB through a
resistive voltage divider and amplified through the internal transconductance error amplifier. The converter uses
internal N-Channel MOSFET switches to step-down the input voltage to the regulated output voltage. Since the
high side MOSFET requires a gate voltage greater than the input voltage, a boost capacitor connected
between SW and BOOT is needed to drive the high side gate. The boost capacitor is charged from the internal
5V rail when SW is low.When the XC8113B FB pin exceeds 10% of the nominal regulation voltage of 0.8V, the
over voltage comparator is tripped, forcing the high-side switch off.
:
Setting the Output Voltage
Inductor Selection
The external resistor divider sets the output
voltage.The feedback resistor R1 also sets
the feedback-loop bandwidth through the
internal compensation capacitor (see the
Typical Application circuit). Choose R1
around 10kΩ, and R2 by:
The inductor is required to supply constant current to
the output load while being driven by the swi
tched input voltage. A larger value inductor will re
sult in less ripple current that will result in lower out
put ripple voltage. However, the larger value inductor
will have a larger physical size, higher series
resistance, and/or lower saturation current.
A good rule for determining the inductance to use is
to allow the peak-to-peak ripple current in the indu
ctor to be approximately 30% of the maximum switch
current limit. Also, make sure that the peak inductor
current is below the maximum switch current limit.
The inductance value can be calculated by:
Use a network below for when V OUT is low
L = [ VOUT / (fS × ΔIL) ] × (1 − VOUT/VIN)
Figure 1: Network.
Where VOUT is the output voltage, VIN is the input
voltage, fS is the switching frequency, and ΔIL is the
peak-to-peak inductor ripple current. Choose an
inductor that will not saturate under the maximum
inductor peak current. The peak inductor current
can be calculated by:
Table 1 lists the recommended T-type resistors
value for common output voltages.
VOUT (V) R1 (KΩ) R2 (KΩ)
Rt(KΩ)
COUT (μF)
1.05
1.2
1.8
2.5
3.3
20.5
30.1
40.2
40.2
40.2
82
60.4
32.4
19.1
13
82
82
56
33
33
44
44
44
44
44
5
40.2
7.68
33
44
ILP = I LOAD + [ VOUT / (2 × fS × L) ] × (1 −
VOUT/VIN)
Where ILOAD is the load current.The
choice
of
which style inductor to use mainly depends on the
price
vs.size
requirements
and
any
EMI
requirements.
Table 1: Resistor selection for common output
voltages. Rt is used to set control loop’s
bandwidth, which is proportional to the relation
by R1, R2, RT:1/[(Rt+15k)*(1+R1/R2)+R1]
So Increase RT & Decrease R1&R2
value(keeping R1/R2 ratio), the bandwidth can
be kept the same(the relation value need to be
the same)
XC8113B v.1.00
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XC8113B
Input Capacitor Selection
The input current to the step-down converter is discontinuous, therefore a capacitor is required to supply
the AC current to the step-down converter while maintaining the DC input voltage. Use low ESR capacitors
for the best performance. Ceramic capacitors are preferred, but tantalum or low-ESR electrolytic capacitors
may also suffice. Choose X5R or X7R dielectrics when using ceramic capacitors.
Since the input capacitor (C1) absorbs the input switching current it requires an adequate ripple
current rating. The RMS current in the input capacitor can be estimated by:
IC1 = I LOAD × [ (VOUT/VIN) × (1 − VOUT/VIN) ] 1/2
The worst-case condition occurs at VIN = 2VOUT, where IC1 = ILOAD /2. For simplification, choose the input
capacitor whose RMS current rating greater than half of the maximum load current.
The input capacitor can be electrolytic, tantalum or ceramic. When using electrolytic or tantalum capacitors,
a small, high quality ceramic capacitor, i.e. 0.1μF, should be placed as close to the IC as possible. When
using ceramic capacitors, make sure that they have enough capacitance to provide sufficient charge to
prevent excessive voltage ripple at input. The input voltage ripple for low ESR capacitors can be estimated by:
ΔVIN = [ ILOAD/(C1 × fS) ] × (VOUT/VIN) × (1 − VOUT/VIN) Where C1 is the input capacitance value.
Optional Schottky Diode Selection
During the transition between high-side switch and low-side switch, the body diode of the low-side power
MOSFET conducts the inductor current. The forward voltage of this body diode is high. An optional Schottky
diode may be paralleled between the SW pin and GND pin to improve overall efficiency. Table 2 lists
example Schottky diodes and their Manufacturers.
Part
Number
B130
Voltage and
Current Rating
30V, 1A
Diodes Inc.
SK13
MBRS130
30V, 1A
30V, 1A
Diodes Inc.
International Rectifier
Vendor
Table 2: Diode selection guide.
Output Capacitor Selection
The output capacitor is required to maintain the DC output voltage. Ceramic, tantalum, or low ESR
electrolytic capacitors are recommended. Low ESR capacitors are preferred to keep the output
voltage ripple low. The output voltage ripple can be estimated by:
ΔVOUT = [ VOUT/(fS × L) ] × (1 − VOUT/VIN)× [ RESR + 1 / (8 × fS × C2) ]
Where C2 is the output capacitance value and RESR is the equivalent series resistance (ESR) value of the
output capacitor.In the case of ceramic capacitors, the impedance at the switching frequency is dominated by
the capacitance. The output voltage ripple is mainly caused by the capacitance. For simplification, the
output voltage ripple can be estimated by:
ΔVOUT = [ VOUT/(8 × fS2 × L × C2) ] × (1 − VOUT/VIN)
In the case of tantalum or electrolytic capacitors, the ESR dominates the impedance at the switching frequency.
For simplification, the output ripple can be approximated to:
ΔVOUT = [ VOUT/(fS × L) ] × (1 − VOUT/VIN) × RESR
The characteristics of the output capacitor also affect the stability of the regulation system. The XC8113B
can be optimized for a wide range of capacitance and ESR values.
XC8113B v.1.00
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XC8113B
External Bootstrap Diode Selection
An external bootstrap diode may enhance the efficiency of the regulator, the applicable conditions of external BOOT
diode are:
● VOUT = 5V or 3.3V; and
● Duty cycle is high: D = VOUT/VIN > 65%
XC8113B
XC8113B
Figure 2: Add optional external bootstrap
Figure 3: Add a Schottky diode to promote efficiency
diode to enhance efficiency.
when VIN ≤ 6V.
In these cases, an external BOOT diode is recommended from the output of the voltage regulator to BOOT pin, as
shown in Figure 2.
The recommended external BOOT diode is IN4148, and the BOOT capacitor is 0.1 ~ 1μF.
When VIN ≤ 6V, for the purpose of promote the efficiency,it can add an external Schottky diode between IN and BOOT
pins, as shown in Figure 3.
PC BOARD LAYOUT
PCB layout is very important to achieve stable operation. Please follow the guidelines below.
1) Keep the path of switching current short and minimize the loop area formed by Input capacitor, high-side
MOSFET and low-side MOSFET.
2) Bypass ceramic capacitors are suggested to be put close to the VIN Pin.
3) Ensure all feedback connections are short and direct.
Place the feedback resistors and compensation components as close to the chip as possible.
4) Rout SW away from sensitive analog areas such as FB.
5) Connect IN, SW, and especially GND respectively to a large copper area to cool the chip to improve thermal
performance and long-term reliability.
6) Make sure Vcc capacitor (C6) as close to the IC as possible.
BOM of XC8113B
Please refer to the Typical Application Circuit.
Item
Reference
Part
1
C1
10μF
2
C5
100nF
3
C7
0.1μF
4
R4
100K
Vout = 5.0V
Vout = 3.3V
Vout = 2.5V
Vout = 1.8V
Vout = 1.2V
L1
6.8μH
6.8μH
4.7μH
3.3μH
2.2μH
R1
40.2K
40.2K
40.2K
40.2K
20.5K
R2
7.68K
13K
19.1K
32.4K
41.2K
C2
22μF×2
22μF×2
22μF×2
22μF×2
22μF×2
Table 4: BOM selection table II.
Table 3: BOM selection table I.
XC8113B v.1.00
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XC8113B
PACKAGE
SOT23-6L
D
C
B
e
A
b
H
A1
L
Symbol
A
A1
B
b
C
D
e
H
L
XC8113B v.1.00
Dimensions in mm
Min
Max
0.700
0.900
0.000
0.100
1.600
1.700
0.350
0.500
2.650
2.950
2.820
3.020
0.950 BSC
0.080
0.200
0.300
0.600
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Dimensions in Inch
Min
Max
0.028
0.035
0.000
0.004
0.063
0.067
0.014
0.020
0.104
0.116
0.111
0.119
0.037 BSC
0.003
0.008
0.012
0.024
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