SI2301CDS-T1-GE3-HXY

HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Description The SI2301CDS-T1-GE3 uses advanced trench technology to provide excellent R DS(ON), low gate D chargeand operation with gate voltages as low as S 1.8V. This device is suitable for use as a load switch G or in PWM applications. SOT-23 General Features VDS = -20V,ID = - 2.3A RDS(ON) < 140m Ω @ VGS=-4.5V D RDS(ON) < 170m Ω @ VGS=-2.5V G Application PWM applications S Load switch P-Channel MOSFET Package Marking and Ordering Information Product ID Pack Brand Qty(PCS) SI2301CDS-T1-GE3 SOT-23 HXY MOSFET 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID Drain Current-Continuous -2.3 A IDM Drain Current-Pulsed (Note 1) -9 A PD Maximum Power Dissipation 0.65 W -55 To 150 ℃ 178 ℃/W TJ,TSTG RθJA Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient (Note 2) Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - -1 μA - - ±100 nA -0.4 -0.7 -1 V VGS=-4.5V, ID=-2A 130 140 mΩ VGS=-2.5V, ID=-1.8A 152 170 mΩ 4 - - S - 285 - PF - 58 - PF - 32 - PF - 9.8 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS VDS=-5V,ID=-2A (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=-10V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V, RL=5Ω - 4.9 - nS td(off) VGS=-4.5V,RGEN=3Ω - 20.5 - nS - 7 - nS - 2.9 - nC - 0.45 - nC - 0.75 - nC - - -1.2 V - - -2.0 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-2A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-2A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 10% 10% 90% VIN 50% 10% 50% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) -ID- Drain Current (A） Figure 1:Switching Test Circuit 90% INVERTED TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation -Vds Drain-Source Voltage (V) Figure 5 Output Characteristics Shenzhen HuaXuanYang Electronics CO.,LTD -ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.hxymos.com HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET ID- Drain Current (A) Normalized On-Resistance HUAXUANYANG TJ-Junction Temperature(℃) -Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics -Vgs Gate-Source Voltage (V) -Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds -Vgs Gate-Source Voltage (V) -Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Shenzhen HuaXuanYang Electronics CO.,LTD -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.hxymos.com HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET ID- Drain Current (A) HUAXUANYANG Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2301CDS-T1-GE3 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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