HRT60N08D

南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x 60V N-Channel Power MOSFET MOSFET Metal Oxide Semiconductor Field Effect Transistor HRT60N08x Data Sheet Rev. 2020 V1.0 Rev.2020 V1.0 1 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x 60V N-Channel Power MOSFET Description TO-263 TO-252 TO-251 TO-220 N-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features ⚫ Low FOM RDS(on)×Qgd ⚫ 100% avalanche tested ⚫ Easy to use/drive ⚫ RoHS compliant Drain Applications ⚫ DC/DC Converter ⚫ Battery Protection Charge/Discharge Gate ⚫ Load Switch ⚫ Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25℃ 60 V RDS(on),max@10V 8 mΩ Qg,typ 76 nC ID@Tc=25℃ 80 A ID,pulse 320 A EAS1) 244 mJ Device Marking and Package Information Device Package Marking HRT60N08B TO-263 60N08B HRT60N08D TO-252 60N08D HRT60N08U TO-251 60N08U HRT60N08P TO-220 60N08P Rev.2020 V1.0 2 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Absolute Maximum Ratings TA = 25ºC, unless otherwise noted Parameter Symbol Values Unit VDS 60 V Drain-Source Voltage(VGS=0V) Continuous Drain Current2) TC = 25ºC 80 ID TC = 100ºC A 51 Pulsed Drain Current3) ID,pulse 320 A Gate-Source Voltage VGSS ±20 V Single Pulse Avalanche Energy1) EAS 244 mJ Power Dissipation PD 83 W TJ, Tstg -55~+150 ºC Symbol Max. Unit Thermal Resistance, Junction-to-Case RthJC 1.5 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Operating Junction and Storage Temperature Range Thermal Resistance Parameter Notes 1) L=0.5mH, VDD=30V, Start TJ=25℃. 2) Limited by maximum junction temperature. 3) Repetitive Rating: Pulse width limited by maximum junction temperature. Rev.2020 V1.0 3 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Electrical Characteristics TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- VDS = 60V VGS = 0V, TJ = 25ºC -- -- 1 VDS = 60V VGS = 0V, TJ = 125ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 2.8 4 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 20A -- 6.5 8 mΩ RG f = 1.0MHz open drain -- 1.6 -- Ω -- 4009 -- -- 243 -- Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current V(BR)DSS μA IDSS Gate Resistance V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 201 -- Total Gate Charge Qg -- 76 -- Gate-Source Charge Qgs -- 17 -- Gate-Drain Charge Qgd -- 19 -- VPlateau -- 4.3 -- Turn-on Delay Time td(on) -- 19 -- Turn-on Rise Time tr -- 42 -- Turn-off Delay Time td(off) -- 48 -- -- 29 -- -- -- 1.2 V Gate Plateau Voltage Turn-off Fall Time VGS = 0V, VDS = 30V f = 1.0MHz VDS = 30V, ID = 20A VGS = 10V VDS = 30V, VGS =10V RG = 3Ω, ID = 20A tf pF nC V ns Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 20A VGS = 0V Continuous Diode Forward Current IS -- -- 80 A Reverse Recovery Time trr -- 28 -- ns Reverse Recovery Charge Qrr -- 52 -- nC IF = 20A, diF/dt = 100A/μs Rev.2020 V1.0 4 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Typical Characteristics TJ = 25ºC, unless otherwise noted 1000 90 PD, Power Dissipation (W) ID, Drain Current (A) 80 100 10 Limited by RDS(on) Single Pulse TC=25℃ TJ=150℃ 1 DC 70 60 50 40 30 20 10 0.1 0 0.1 1 10 VDS, Drain-to-Source Voltage (V) 100 0 90 80 80 70 70 60 50 40 30 20 VGS=10V 60 VGS=6V VGS=5.5V 50 40 VGS=5.0V 30 VGS=4.5V 20 10 10 0 0 25 50 75 100 125 150 TC, Case Temperature (℃) Figure 3. Maximum Continuous Drain Current vs Case Temperature 10 ZθJC, Thermal Response (℃/W) 150 Figure 2. Maximum Power Dissipation vs Case Temperature ID, Drain Current (A) ID, Drain Current (A) Figure 1. Maximum Safe Operating Area 25 50 75 100 125 TC, Case Temperature (℃) 0 1 2 3 VDS, Drain-to-Source Voltage (V) Figure 4. Typical output Characteristics 1 D = 1.0 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 Notes: 1.Duty Cycle, D=t1/t2 2.TJM = PDM*RθJC + TC 0.01 0.1 1 10 T, Rectangular Pulse Duration (s) Figure 5. Maximum Effective Thermal Impedance, Junction to Case Rev.2020 V1.0 5 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Typical Characteristics TJ = 25ºC, unless otherwise noted 100 1000 Is, Source Current (A) ID, Drain Current (A) Note: 1.VDS=5V 2.250μs Pulsed Test 100 TJ=150℃ TJ=25℃ 10 1 10 TJ=25℃ 1 0.1 0.1 0 3 4 5 6 VGS, Gate-to-Source Voltage (V) Figure 6. Typical Transfer Characteristics 7.4 Pulsed Test TJ = 25℃ 1.8 RDS(on) (Normalized) 7 6.8 RDS(on) (mΩ) 0.2 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) Figure 7. Typical Body Diode Transfer Characteristics 2 7.2 6.6 6.4 6.2 VGS = 10V 6 1.6 1.4 1.2 1 0.8 5.8 Pulsed Test VGS = 10V ID = 20A 0.6 5.6 0.4 5.4 0 -50 10 15 20 25 30 ID, Drain Current (A) Figure 8. Drain-to-Source On Resistance vs Drain Current 1.2 5 1.12 VGS = VDS ID = 250μA 0 50 100 150 TJ, Junction Temperature (℃) Figure 9. Normalized On Resistance vs Junction Temperature VGS = 0V ID = 250μA 1.1 BVDSS (Normalized) 1.1 VGS(th) (Normalized) TJ=150℃ 1 0.9 0.8 1.08 1.06 1.04 1.02 1 0.98 0.7 0.96 0.6 0.94 -50 0 50 100 150 TJ, Junction Temperature (℃) Figure 10. Normalized Threshold Voltage vs Junction Temperature Rev.2020 V1.0 6 -50 0 50 100 150 TJ, Junction Temperature (℃) Figure 11. Normalized Breakdown Voltage vs Junction Temperature HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Typical Characteristics TJ = 25ºC, unless otherwise noted 10 Vgs, Gate-to-Source Voltage (V) 10000 Capacitance (pF) Ciss 1000 Coss 100 Crss VGS=0V f=1MHz 10 VDS=30V ID=20A 8 6 4 2 0 0 20 40 60 VDS, Drain-to-Source Voltage (V) Figure 12. Capacitance Characteristics Rev.2020 V1.0 0 7 20 40 60 80 Qg, Gate Charge (nC) Figure 13. Typical Gate Charge vs Gate to Source Voltage HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform Rev.2020 V1.0 8 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Outlines TO-263 Package SYMBOL MIN NOM MAX A 4.4 4.5 4.6 A1 0 0.1 0.25 A2 2.2 2.4 2.6 b 0.76 -- 0.89 b1 0.75 0.8 0.85 b2 1.23 -- 1.37 b3 1.22 1.27 1.32 c 0.47 -- 0.6 c1 0.46 0.51 0.56 c2 1.25 1.3 1.35 D 9.1 9.2 9.3 D1 8 -- -- E 9.8 9.9 10 E1 7.8 -- -- e Rev.2020 V1.0 9 2.54 BSC H 14.9 15.3 15.7 L 2 2.3 2.6 L1 1.17 1.27 1.4 L2 -- -- 1.75 L3 0.25 BSC L4 4.60 REF Ɵ 0° -- 8° Ɵ1 1° 3° 5° HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Outlines TO-252 Package Rev.2020 V1.0 10 SYMBOL MIN NOM MAX A 2.2 2.3 2.4 A1 0 -- 0.2 A2 0.9 1.035 1.17 b 0.645 -- 0.9 b3 5.13 5.326 5.46 c 0.43 -- 0.61 c2 0.41 -- 0.61 D 5.98 6.1 6.22 D1 5.244 -- -- E 6.4 6.6 6.73 E1 4.63 -- -- e 2.186 2.286 2.386 H 9.4 10.04 10.5 L 1.38 1.5 1.75 L1 2.6 2.872 3 L2 0.5 0.509 0.52 L3 0.88 -- 1.28 L4 0.5 -- 1 L6 1.5 1.7 1.95 Ɵ 0° -- 10° HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Outlines TO-251 Package Rev.2020 V1.0 11 SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A1 0.90 1.04 1.17 b 0.56 -- 0.90 b4 5.20 5.33 5.46 b5 -- -- 1.05 c 0.43 -- 0.61 c2 0.43 -- 0.61 D 5.98 6.10 6.22 D1 5.2 -- -- E 6.40 6.60 6.73 E1 4.60 -- -- e 2.24 2.29 2.34 e1 4.47 4.57 4.67 H 16.18 16.50 16.82 L 9 9.35 9.65 L2 0.88 1.05 1.28 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Outlines TO-220 Package Rev.2020 V1.0 12 SYMBOL MIN NOM MAX A 4.37 4.535 4.7 A1 1.25 1.3 1.4 A2 2.2 2.4 2.6 b 0.7 --- 0.95 b1 1.17 --- 1.47 c 0.45 0.5 0.6 D 15.1 15.65 16.1 D1 8.8 9.15 9.4 D2 11.8 --- --- E 9.7 9.95 10.3 E1 7 --- --- e 2.54 BSC e1 5.08 BSC H1 6.25 6.5 6.85 L 12.75 13.29 13.8 L1 --- --- 3.5 ΦP 3.4 3.67 3.8 Q 2.6 --- 3 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd 联系人：　Ｍｉｃｈａｅｌ　　电话：　１３７　６０３５　３５９０　　Ｅｍａｉｌ：　ｌｉｕｑ＠ｈｒ－ｍｉｃｒｏ．ｃｏｍ HRT60N08x Disclaimer HRM has made reasonable commercial efforts to ensure that the information given in this datasheet is correct. However, it must clearly be understood that such information is for guidance only and does not constitute any representation or form part of any offer or contract. For documents and material available from this datasheet, HRM does not warrant or assume any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, product, technology or process disclosed hereunder. HRM reserves the rights to at its own discretion to make any changes or improvements to this datasheet. Unless said datasheet is incorporated into the formal contract, any customer should not rely on the information as any specification or product parameters duly committed by HRM. Customers are hereby advised to verify that the information contained herein is current and complete before the entering of any contract or acknowledgement of any purchase order. Accordingly, all products specified hereunder shall be sold subject to HRM’s terms and conditions supplied at the time of order acknowledgement. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed. HRM does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information contained herein shall be only permissible if such reproduction is without any modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. HRM is not responsible or liable for such altered documentation. Resale of HRM’s products with statements different from or beyond the parameters stated by HRM for that product or service voids all express or implied warrantees for the associated HRM’s product or service and is unfair and deceptive business practice. HRM is not responsible or liable for any such statements. HRM’s products are not authorized for use as critical components in life support devices or systems without the express written approval of HRM. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Rev.2020 V1.0 13 HR-micro © Copyright reserved 2019