HRT60N10D

南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x 60V N-Channel Power MOSFET MOSFET Metal Oixde Semiconductor Field Effect Transistor HRT60N10x Data Sheet Rev. 2020 V1.0 Rev.2020 V1.0 1 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x 60V N-Channel Power MOSFET Description TO-263 TO-252 TO-251 TO-220 N-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology.This devices provide an excellent Gate charge and Rds(on),which leads to extremely communication and conduction losses.So it is very suitable for AC/DC power conversion,load switch and industrial power applications. Features  Low FOM RDS(on)×Qgd  100% avalanche tested  Easy to use/drive  RoHS compliant Drain Applications  DC-DC Converter  Battery Protection Charge/Discharge Gate  Load Switch  Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25℃ 60 V RDS(on),max@10V 10 mΩ Qg,typ 76 nC ID@Tc=25℃ 75 A ID,pulse 300 A EAS1) 258 mJ Device Marking and Package Information Device Package Marking HRT60N10B TO263 60N10B HRT60N10D TO252 60N10D HRT60N10U TO251 60N10U HRT60N10P TO220 60N10P Rev.2020 V1.0 2 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Absolute Maximum Ratings TA = 25ºC, unless otherwise noted Parameter Drain-Source voltage(VGS=0V) Continuous Drain Current2) Symbol Values Unit VDS 60 V TC = 25ºC 75 ID TC = 100ºC A 48 Pulsed Drain Current3) ID,pulse 300 A Gate-Source Voltage VGSS ±20V V Single Pulse Avalanche Energy1) EAS 258 mJ Power Dissipation PD 105 W TJ, Tstg -55~+150 ºC Symbol Max. Unit Thermal Resistance, Junction-to-Case RthJC 1.5 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Operating Junction and Storage Temperature Range Thermal Resistance Parameter Notes 1) L=0.5mH,VDD=30V, Start TJ=25℃ 2) Limited by maximum junction temperature. 3) Repetitive Rating: Pulse width limited by maximum junction temperature. Rev.2020 V1.0 3 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Electrical Characteristics TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- VDS = 60V VGS = 0V, TJ = 25ºC -- -- 1 VDS = 48V, VGS = 0V, TJ = 125ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 3 4 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 20A -- 7.5 10 mΩ RG f = 1.0MHz open drain -- 2.2 -- Ω -- 4938 -- -- 234 -- Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current V(BR)DSS μA IDSS Gate Resistance V Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = 30V f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 167 -- Total Gate Charge Qg -- 76 -- Gate-Source Charge Qgs -- 22 -- Gate-Drain Charge Qgd -- 14 -- VPlateau -- 4.8 -- Turn-on Delay Time td(on) -- 18 -- Turn-on Rise Time tr -- 39 -- Turn-off Delay Time td(off) -- 45 -- -- 28 -- -- -- 1.2 V Gate Plateau Voltage Turn-off Fall Time VDS = 30V , ID = 20A VGS = 10V VDS = 30V , VGS =10V RG = 3Ω，ID = 20A pF nC V ns tf Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V Continuous Diode Forward Current IS -- -- 75 A Reverse Recovery Time trr -- 27 -- ns Reverse Recovery Charge Qrr -- 49 -- nC IF = 20A，diF/dt = 100A/μs Rev.2020 V1.0 4 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Typical Characteristics TJ = 25ºC, unless otherwise noted 1000 120 PD,Power Dissipation,[W] ID,Drain Current,[A] 100 100 10 Limited by RDS(on) SINGLE PULSE TC=25℃ TJ=150℃ 1 DC 0.1 80 60 40 20 0 0.1 1 10 100 0 25 VDS,Drain-to-Source Voltage,[V] 50 75 100 125 150 TC,Case Temperature,[℃] Figure 1. Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs Case Temperature 80 80 Vgs=10V (Package Limited) 70 70 60 60 Vgs=6V ID,Drain Current,[A] ID,Drain Current,[A] Vgs=5.5V 50 40 30 20 10 50 Vgs=5.0V 40 30 20 Vgs=4.5V 10 0 0 25 50 75 100 125 150 0 1 2 VDS,Drain-to-Source Voltage,[V] TC,Case Temperature,[℃] ZθJC,Thermal Response,[℃/W] Figure 3. Maximum Continuous Drain Current vs Case Temperature 10 3 Figure 4. Typical output Characteristics 1 D = 1.0 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 Notes: 1.Duty Cycle, D=t1/t2 2.TJM = PDM*RθJC + TC 0.01 0.1 1 10 T , Rectangular Pulse Duration ,[sec] Figure 5 Maximum Effective Thermal Impedance , Junction to Case Rev.2020 V1.0 5 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Typical Characteristics TJ = 25ºC, unless otherwise noted 100 1000 Note: 1.VDS=5V 2.250us Pulse Test Is,Source Current,[A] ID,Drain Current,[A] 100 Tj=150℃ 10 Tj=25℃ 1 0.1 10 Tj=150℃ 1 Tj=25℃ 0.1 0.01 3 4 5 VGS,Gate-to-Source Voltage,[V] 6 0 2 8.4 8.2 PULSED TEST Tj = 25℃ 1.8 RDS(on),(Normalized) 8 7.8 RDS(on),[mΩ] 1.2 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics 7.6 7.4 7.2 VGS = 10V 7 6.8 1.6 1.4 1.2 PULSED TEST VGS = 10V ID = 20A 1 0.8 0.6 6.6 0.4 6.4 0 -50 10 15 20 25 30 ID,Drain Current,[A] Figure 8. Drain-to-Source On Resistance vs Drain Current 5 VGS = VDS ID = 250μA 50 100 150 1.1 BVDSS,(Normalized) 1.1 0 TJ,Junction Temperature,[℃] Figure 9. Normalized On Resistance vs Junction Temperature 1.12 1.2 VGS(th),(Normalized) 0.2 0.4 0.6 0.8 1 VSD，Source-to-Drain Voltage,[V] 1 0.9 0.8 0.7 1.08 1.06 1.04 1.02 1 0.98 0.96 0.6 0.94 -50 0 50 100 150 TJ,Junction Temperature,[℃] -50 0 50 100 TJ,Junction Temperature,[℃] 150 Figure10. Normalized Threshold Voltage vs Figure 11. Normalized Breakdown Voltage vs Junction Temperature Junction Temperature Rev.2020 V1.0 6 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Typical Characteristics TJ = 25ºC, unless otherwise noted 10000 Vgs,Gate-to-Source Voltage,[V] 10 Capacitance,[pF] Ciss 1000 Coss 100 Crss VDS=30V ID=20A 8 6 4 2 0 10 0 20 40 60 VDS,Drain-to-Source Voltage,[V] Figure 12. Capacitance Characteristics Rev.2020 V1.0 7 0 20 40 60 80 Qg,Gate Charge,[nC] Figure 13 Typical Gate Charge vs Gate to Source Voltage HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform Rev.2020 V1.0 8 HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x TO263 Package SYMBOL A A1 A2 b B1 B2 b3 c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Ɵ Ɵ1 Rev.2020 V1.0 9 MIN 4.40 0 2.20 0.76 0.75 1.23 1.22 0.47 0.46 1.25 9.10 8.00 9.80 7.80 14.90 2.00 1.17 -- 0° 1° NOM 4.50 0.10 2.40 -0.80 -1.27 -0.51 1.30 9.20 -9.90 -2.54 BSC 15.30 2.30 1.27 -0.25 BSC 4.60 REF -3° MAX 4.60 0.25 2.60 0.89 0.85 1.37 1.32 0.60 0.56 1.35 9.30 -10.00 -15.70 2.60 1.40 1.75 8° 5° HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x TO252 Package SYMBOL A A1 A2 b b1 b2 b3 c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 L5 L6 Ɵ Ɵ1 Ɵ2 Rev.2020 V1.0 10 MIN 2.20 0 0.90 0.72 0.71 0.72 5.13 0.47 0.46 0.47 6.00 5.25 6.50 4.70 2.186 9.80 1.40 0.90 0.60 0.15 0° 5° 5° NOM 2.30 -1.01 -0.76 -5.33 -0.51 -6.10 -6.60 -2.286 10.10 1.50 2.90 REF 0.508 BSC -0.80 -1.80 REF -7° 7° MAX 2.38 0.10 1.10 0.85 0.81 0.90 5.46 0.60 0.56 0.60 6.20 -6.70 -2.386 10.40 1.70 1.25 1.00 0.75 8° 9° 9° HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x TO251 Package SYMBOL A A1 b b1 b2 b3 b4 b5 c c1 c2 D D1 E E1 e e1 H L L1 L2 Ɵ Ɵ1 Rev.2020 V1.0 11 MIN 2.20 0.90 0.56 0.55 0.77 0.76 5.23 -0.46 0.45 0.46 6.00 5.20 6.50 4.60 2.24 4.47 16.18 9.00 0.95 0.90 3° 1° NOM 2.30 1.01 -0.60 -0.81 5.33 --0.51 -6.10 -6.60 4.83 2.29 4.57 16.48 9.30 1.16 1.08 5° 3° MAX 2.35 1.10 0.69 0.65 0.90 0.86 5.43 1.05 0.59 0.55 0.59 6.20 -6.70 5.00 2.34 4.67 16.78 9.60 1.35 1.25 7° 5° HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x TO220 Package SYMBOL A A1 A2 b b1 c D D1 D2 E E1 e e1 H1 L L1 L2 фP Q Ɵ1 Rev.2020 V1.0 12 MIN 4.40 1.27 2.30 0.70 1.27 0.45 15.30 9.10 13.10 9.70 7.80 6.30 12.78 -3.55 2.73 1° NOM 4.50 1.30 2.40 --0.50 15.70 9.20 -9.90 8.00 2.54 BSC 5.08 BSC 6.50 13.08 -4.60REF 3.60 -3° MAX 4.60 1.33 2.50 0.90 1.40 0.60 16.10 9.30 13.70 10.20 8.20 6.70 13.38 3.50 3.65 2.87 5° HR-micro © Copyright reserved 2019 南京华瑞微集成电路有限公司 NanJing HRM Semiconductor Co.,Ltd HRT60N10x Disclaimer HRM has made reasonable commercial efforts to ensure that the information given in this datasheet is correct. 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HRM is not responsible or liable for any such statements. HRM’s products are not authorized for use as critical components in life support devices or systems without the express written approval of HRM. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Rev.2020 V1.0 13 HR-micro © Copyright reserved 2019