MBR10100CT

MBR10100CT Dual High Voltage Schottky Rectifier ●Features： ■Common Cathode Structure ■Low Power Loss and High Efficiency ■Low Forward Voltage Drop ■High Surge Capability ●Application: ■ High Frequency Switch ■ Free Wheeling,and Polarity Protection Applications Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V VR Maximum DC Reverse Voltage IF(AV) IFSM 100 5(Per Leg) Average Rectified Forward Current, Tc=120C 10(Per Device) Peak Forward Surge Current,8.3ms Half Sine wave 100 V A A Tj Operating Junction Temperature 150 C Tstg Storage Temperature Range -55 to+150 C Thermal Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Max Unit RθJC Thermal Resistance,Junction to Case Per Leg 2.5 C /W RθJA Thermal Resistance,Junction to Ambient Per Leg 105 C /W Electrical Characteristics(Tc=25C unless otherwise noted) Symbol VRRM Parameter Maximum Repetitive Reverse Voltage IR Reverse Current VF Forward Voltage HUAKE semiconductors 2017.08 Test Conditons Min IR=100μA 100 VR =100V Tc=25C VR =100V Tc=125C IF=5A Tc=25C IF=5A Tc=125C IF=10A Tc=25C IF=10A Tc=125C 1/3 Max Unit V 0.1 5 0.86 0.76 0.96 0.86 mA V 编号：HK-WI-TD-004 版本/版次：B/0 MBR10100CT Dual High Voltage Schottky Rectifier Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current Figure 3. Junction Capacitance HUAKE semiconductors 2017.08 Figure 4. Power Derating 2/3 编号：HK-WI-TD-004 版本/版次：B/0 MBR10100CT Dual High Voltage Schottky Rectifier TO-220 MECHANICAL DATA SYMBOL A B B1 b1 c D D1 min 4.00 1.15 0.90 0.65 0.30 14.40 5.90 HUAKE semiconductors nom 2017.08 max 4.80 1.45 1.40 0.95 0.50 16.40 6.90 SYMBOL E e F L L1 Q Q1 φP 3/3 min 9.70 1.10 12.50 2.90 2.50 2.00 3.60 nom 2.54 3.40 UNIT：mm max 10.70 1.40 14.50 3.90 3.10 3.00 4.00 编号：HK-WI-TD-004 版本/版次：B/0