VIS30940

VIS30940 30V N-Channel SGT MOSFET General Description Product Summary • SGT MOSFET Technology VDS 30V • Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V, typ) 4.6mΩ • High Current Capability RDS(ON) (at VGS=4.5V, typ) 5.8mΩ • RoHS and Halogen-Free Compliant Applications • General DC/DC Converters 100% UIS Tested • VRM Vcore for Notebook and Server 100% Rg Tested • Load Switch and Battery Power Management • Motor Drive Bridge Switch D Top View S S S G G S Orderable Part Number 1 8 2 7 3 6 4 5 Package Type VIS30940 Top View DFN3.3x3.3 DFN3.3X3.3 D D D D PIN1 Form Tape & Reel Symbol Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current (5) 5000 Pulsed Drain Current Continuous Drain Current TA=25°C 30 V VGS ±20 V 32 A 32 A IAS EAS (3) TC=25°C PD TC=100°C TA=25°C PDSM TA=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient (1) TJ, TSTG Symbol t ≤ 10s Maximum Junction-to-Ambient (1,4) Steady-State Maximum Junction-to-Case Steady-State Rev0.61 (12/2021) VDS IDSM TA=100°C Avalanche Energy L=0.1mH Power Dissipation (1) Units IDM (3) Avalanche Current (3) Power Dissipation (2) Maximum ID TC=100°C PIN1 Minimum Order Quantity Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Bottom View RθJA RθJC 150 A 20 A 12.5 A 33 54 A mJ 26 W 10.4 W 3.1 W 1.25 W °C -55 to 150 Typ Max Units 30 40 °C/W 60 75 °C/W 4 4.8 °C/W Voltaic Semiconductor Confidential and Proprietary Information 1 VIS30940 30V N-Channel SGT MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA V VDS=30V, VGS=0V 1 TJ=55°C VGS=10V, ID=20A RDS(ON) 30 Static Drain-Source On-Resistance TJ=125° VGS=4.5V, ID=20A 5 1.4 μA ±100 nA 1.7 2.3 V 4.6 5.5 6.5 5.8 mΩ 7.5 gFS Forward Transconductance VDS=5V, ID=20A 83 S VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 V IS Maximum Body-Diode Continuous Current 34 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 1575 pF 450 pF 35 pF 2.5 Ω 23.2 nC 10.9 nC 6.9 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge 1.5 nC tD(on) Turn-On Delay Time 8 ns tr Turn-On Rise Time tD(off) Turn-Off Delay Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5 ns 12 ns tf Turn-Off Fall Time 5 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=200A/μs 22 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=200A/μs 20 nC 1) 2) 3) 4) 5) 2 RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. Single pulse width limited by junction temperature TJ(MAX)=150°C. RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. The maximum current rating is package limited. Rev0.61 (12/2021) Voltaic Semiconductor Confidential and Proprietary Information 2 VIS30940 30V N-Channel SGT MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3.5V VDS=5V 4.5V 3V 75 7V ID (A) ID (A) 75 50 10V 25 0 0.00 VGS=2.5V 1.00 2.00 3.00 4.00 50 TJ=150°C 25 0 5.00 0.0 1.0 2.0 Fig 1. Typical Output Characteristics 4.0 5.0 6.0 Fig 2. Typical Transfer Characteristics 2000 1.5 1800 1.4 1.3 Ciss 1600 VGS=10V ID=20A Capacitance (pF) Normalized On-Resistance 3.0 VGS (V) VDS (V) 1.2 1.1 VGS=4.5V ID=20A 1 1400 1200 1000 800 Coss 600 Crss 400 0.9 0.8 TJ=25°C 200 0 25 50 75 100 125 0 150 0 5 10 TJ, Junction Temperature (℃) 15 20 25 30 VDS (V) Fig 3. Normalized On-Resistance vs. Temperature Fig 4. Typical Capacitance vs. VDS 1000 10 9 8 100 6 IS(A) VGS(V) 7 5 TJ=150°C 10 TJ=25°C 4 3 1 2 1 0 0 5 10 15 20 25 0.1 0 0.2 0.4 Fig 5. Typical Gate Charge vs. VGS Rev0.61 (12/2021) 0.6 0.8 1 1.2 VSD(V) Qg(nC) Fig 6. Typical Source-Drain Diode Forward Voltage Voltaic Semiconductor Confidential and Proprietary Information 3 VIS30940 30V N-Channel SGT MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 1000 10μs RDS(ON) limited 100μs 10 TJ(MAX)=150℃ TC=25℃ 1 1ms DC 10ms 30 Current Rating ID (A) ID (A) 100 25 20 15 10 5 0.1 0.01 0.1 1 10 100 0 0 25 50 Fig 7. Maximum Safe Operating Area ZθJC Normalized Transient Thermal Resistance 10 1 75 100 125 150 TCASE (℃) VDS(V) Fig 8. Maximum Drain Current vs. Case Temperature In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJC∙RθJC RθJC=4.8℃/W 0.1 PD 0.01 TON T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig 9. Normalized Maximum Transient Thermal Impedance, Junction-to-Case ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJA∙RθJA RθJA=75℃/W 0.1 PD 0.01 TON T 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Fig 10. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient Rev0.61 (12/2021) Voltaic Semiconductor Confidential and Proprietary Information 4 VIS30940 30V N-Channel SGT MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10000 TJ(MAX)=150℃ TC=25℃ 1000 Power (W) Power (W) 600 TJ(MAX)=150℃ TA=25℃ 400 100 10 200 0 0.0001 0.001 0.01 0.1 1 1 0.00001 10 0.001 Fig 11. Single Pulse Power Rating Junction-to-Case 10 1000 Fig 12. Single Pulse Power Rating Junction-to-Ambient 30 15.00 25 12.50 20 10.00 RDSON (mΩ) Power Dissipation (W) 0.1 Pulse Width (s) Pulse Width (s) 15 10 ID=20A 150℃ 7.50 5.00 25℃ 5 2.50 0 0 25 50 75 100 125 150 0.00 2.0 4.0 6.0 8.0 10.0 VGS (V) TCASE (℃) Fig 13. Maximum Power Rating vs. Temperature Fig 14. On-Resistance vs. VGS 8 RDSON (mΩ) 7 VGS=4.5V 6 5 VGS=10V 4 3 2 0 10 20 30 40 50 60 ID (A) Fig 15. On-Resistance vs. Drain Current Rev0.61 (12/2021) Voltaic Semiconductor Confidential and Proprietary Information 5 VIS30940 30V N-Channel SGT MOSFET TEST CIRCUIT BV DSS VDS L IAS + VDD DUT IAS Fig16. Unclamped Inductive Test Circuit Fig17. Unclamped Inductive Waveform VDS Qg VGS 10V L DUT VCC Qgs Fig18. Qg Test Circuit Qgd Fig19. Qg Waveform RL VDS 90% + VGS RG DUT VDD 10% tr td (o n ) td (o ff) to n Fig18. Resistive Switching Test Circuit Rev0.61 (12/2021) tf to ff Fig19. Switching Time Waveform Voltaic Semiconductor Confidential and Proprietary Information 6 VIS30940 30V N-Channel SGT MOSFET TEST CIRCUIT VDS+ VG S DUT VDS- L ISD ISD + VGS VDD IF dI/ dt trr VD D VD S Fig20. Diode Recovery Test Circuit Fig21. Diode Recovery Test Waveform DFN3.3x3.3 OUTLINE A2 A A1 D DIM SYMBOL L3 H L2 E2 D1 L E1 E L1 b e Rev0.61 (12/2021) A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ MILLIMITERS MIN [mm] MAX [mm] 0.650 0.850 0.152 REF 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9º 13º Voltaic Semiconductor Confidential and Proprietary Information 7