VIS30039

VIS30039 30V N-Channel Power Trench MOSFET General Description Product Summary • Trench Power MOSFET Technology VDS 30V • Low RDS(ON) ID (at VGS=10V) 32A • Optimized for High Reliable Switch Application RDS(ON) (at VGS=10V, typ) 3.7mΩ • High Current Capability RDS(ON) (at VGS=4.5V, typ) 4.9mΩ • RoHS and Halogen-Free Compliant Applications • Motor Drive 100% UIS Tested • Load Switch 100% RG Tested • Battery Protection • General DC/DC Converters D Top View S S S G G Top View 1 8 2 7 3 6 4 5 DFN3.3X3.3 Bottom View D D D D PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity VIS30039 DFN3.3x3.3 Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (3) 30 V VGS ±20 V 32 A 32 A 250 A 21 A 17 A 33.3 IDM TA=25°C IDSM TA=100°C IAS Avalanche Energy L=0.1mH Power Dissipation (1) VDS ID TC=100°C Avalanche Current (3) Power Dissipation (2) Units TC=25°C Continuous Drain Current (5) Pulsed Drain Current Maximum (3) EAS TC=25°C PD TC=100°C TA=25°C PDSM TA=100°C Junction and Storage Temperature Range TJ, TSTG 55 A mJ 36 W 13 W 3.1 W 1.25 W °C -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Symbol (1) t ≤ 10s Maximum Junction-to-Ambient (1,4) Steady-State Maximum Junction-to-Case Steady-State Rev0.93 (03/2021) RθJA RθJC Typ Max Units 30 40 °C/W 60 75 °C/W 2.8 3.4 °C/W Voltaic Semiconductor Confidential and Proprietary Information 1 VIS30039 30V N-Channel Power Trench MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA V VDS=30V, VGS=0V 1 TJ=55°C VGS=10V, ID=20A RDS(ON) 30 Static Drain-Source On-Resistance TJ=125° VGS=4.5V, ID=20A 5 1.4 μA ±100 nA 1.8 2.2 V 3.7 4.5 5.3 4.9 mΩ 6.7 gFS Forward Transconductance VDS=5V, ID=20A 71 S VSD Diode Forward Voltage IS=1A, VGS=0V 0.71 V IS Maximum Body-Diode Continuous Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 2366 pF 350 pF 225 pF 0.7 Ω 45.5 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 21.6 nC 9.7 nC Qgd Gate Drain Charge 9.4 nC tD(on) Turn-On Delay Time 12.3 ns tr Turn-On Rise Time tD(off) Turn-Off Delay Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9.4 ns 28.5 ns tf Turn-Off Fall Time 9.8 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=200A/μs 6.8 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=200A/μs 10.2 nC 1) 2) 3) 4) 5) 2 RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. Single pulse width limited by junction temperature TJ(MAX)=150°C. RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. The maximum current rating is package limited. Rev0.93 (03/2021) Voltaic Semiconductor Confidential and Proprietary Information 2 VIS30039 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150.00 150 VDS=5V 4.5V 125.00 125 7V 100 3.5V 10V ID (A) ID (A) 100.00 75.00 50.00 75 50 TJ=150°C 3V 25.00 VGS=2.5V 0.00 0.00 1.00 2.00 3.00 4.00 0 5.00 0.0 1.0 2.0 VDS (V) 4.0 5.0 6.0 Fig 2. Typical Transfer Characteristics 1.6 4000 1.5 3500 1.4 Capacitance (pF) Normalized On-Resistance 3.0 VGS (V) Fig 1. Typical Output Characteristics VGS=4.5V ID=20A 1.3 TJ=25°C 25 1.2 1.1 VGS=10V ID=20A 1 3000 Ciss 2500 2000 Coss 1500 Crss 1000 0.9 500 0.8 0 0 25 50 75 100 125 150 0 5 10 TJ, Junction Temperature (℃) 15 20 25 30 VDS (V) Fig 3. Normalized On-Resistance vs. Temperature Fig 4. Typical Capacitance vs. VDS 10 1000 9 8 100 TJ=150°C 6 IS(A) VGS(V) 7 5 10 TJ=25°C 4 3 1 2 1 0 0.1 0 10 20 30 40 50 0 0.2 0.4 Qg(nC) Fig 5. Typical Gate Charge vs. VGS Rev0.93 (03/2021) 0.6 0.8 1 1.2 VSD(V) Fig 6. Typical Source-Drain Diode Forward Voltage Voltaic Semiconductor Confidential and Proprietary Information 3 VIS30039 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 100μs ID (A) 30 10μs RDS(ON) limited 10 1ms TJ(MAX)=150℃ TC=25℃ 10ms DC 1 Current Rating ID (A) 100 35 25 20 15 10 5 0 0.1 0.01 0.1 1 10 0 100 25 50 Fig 7. Maximum Safe Operating Area ZθJC Normalized Transient Thermal Resistance 100 125 150 Fig 8. Maximum Drain Current vs. Case Temperature 10 1 75 TCASE (℃) VDS(V) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJC∙RθJC RθJC=3.4℃/W 0.1 PD 0.01 TON T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig 9. Normalized Maximum Transient Thermal Impedance, Junction-to-Case ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJA∙RθJA RθJA=75℃/W 1 0.1 PD 0.01 TON T 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Fig 10. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient Rev0.93 (03/2021) Voltaic Semiconductor Confidential and Proprietary Information 4 VIS30039 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10000 TJ(MAX)=150℃ TC=25℃ 1000 Power (W) Power (W) 800 TJ(MAX)=150℃ TA=25℃ 600 400 100 10 200 0 0.00001 0.0001 0.001 0.01 0.1 1 1 0.00001 10 0.001 Pulse Width (s) Fig 11. Single Pulse Power Rating Junction-to-Case 10 1000 Fig 12. Single Pulse Power Rating Junction-to-Ambient 15.00 40 ID=20A 35 12.50 30 RDSON (mΩ) Power Dissipation (W) 0.1 Pulse Width (s) 25 20 15 10.00 7.50 150℃ 5.00 10 2.50 5 0 25℃ 0.00 0 25 50 75 100 125 150 2.0 4.0 TCASE (℃) 6.0 8.0 10.0 VGS (V) Fig 13. Maximum Power Rating vs. Temperature Fig 14. On-Resistance vs. VGS 8 RDSON (mΩ) 7 6 VGS=4.5V 5 4 VGS=10V 3 2 0 10 20 30 40 50 60 ID (A) Fig 15. On-Resistance vs. Drain Current Rev0.93 (03/2021) Voltaic Semiconductor Confidential and Proprietary Information 5 VIS30039 30V N-Channel Power Trench MOSFET TEST CIRCUIT BV DSS VDS L IAS + VDD DUT IAS Fig16. Unclamped Inductive Test Circuit Fig17. Unclamped Inductive Waveform VDS Qg VGS 10V L DUT VCC Qgs Fig18. Qg Test Circuit Qgd Fig19. Qg Waveform RL VDS 90% + VGS RG DUT VDD 10% tr td (o n ) td (o ff) to n Fig18. Resistive Switching Test Circuit Rev0.93 (03/2021) tf to ff Fig19. Switching Time Waveform Voltaic Semiconductor Confidential and Proprietary Information 6 VIS30039 30V N-Channel Power Trench MOSFET TEST CIRCUIT VDS+ VG S DUT VDS- L ISD ISD + VGS VDD IF dI/ dt trr VD D VD S Fig20. Diode Recovery Test Circuit Fig21. Diode Recovery Test Waveform DFN3.3x3.3 OUTLINE A2 A A1 D DIM SYMBOL L3 H L2 E2 D1 L E1 E L1 b e Rev0.93 (03/2021) A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ MILLIMITERS MIN [mm] MAX [mm] 0.650 0.850 0.152 REF 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9º 13º Voltaic Semiconductor Confidential and Proprietary Information 7