TSD16N25M

TSD16N25M TSD16N25M 250V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. • 16A,250V,Max.R DS(on)=0.25Ω @ VGS =10V Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±30 V TC=25℃ 16 A TC=100℃ 7.2 A IDM 64 A PD 35 W Drain current (DC) * Drain current (Pulsed) ID * Power dissipation Avalanche current (Single) ② IAS 16 A Single pulsed avalanche energy ② EAS 144 mJ Avalanche current (Repetitive) ① IAR 14 A Repetitive avalanche energy ① EAR 13.9 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range °C * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max. Junction-case Rth(J-C) - 3.57 Junction-ambient Rth(J-A) - 62.5 © 2018 Truesemi Semiconductor Corporation Ver.B1 Unit ℃/W www.truesemi.com 1 TSD16N25M Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V 250 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=250V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(on) VGS=10V, ID=8.0A - 0.22 0.25 Ω Forward transfer conductance ④ gfs VDS=10V, ID=8.0A - 10.5 - S - 1200 1275 - 150 170 - 49 64 - 15 - - 30 - - 135 - - 40 - - 22 28 - 7.1 - - 5.9 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge VGS=0V, VDS=25V f=1 MHz VDD=125V, ID=16A RG=25Ω ③④ VDS=200V, VGS=10V ID=16A ③④ Qgd pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Source current (DC) IS Test Condition Min. Typ. Max. Unit - - 16 - - 64 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=16A - - 1.4 V Reverse recovery time trr - 208 - ns Reverse recovery charge Qrr IS=16A, VGS=0V dIF/dt=100A/us - 1.63 - uC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=3.0mH, IAS=16A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com 2 TSD16N25M Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com 3 TSD16N25M Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C Fig. 9 C Fig. 10 Safe Operating Area ID - TC ` * © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com 4 TSD16N25M Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com 5 TSD16N25M Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com 6