OSG70R750DF

OSG70R750DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent stability and uniformity Applications  PC power  LED lighting  Telecom power  Server power  EV Charger  Solar/UPS Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 750 V ID, pulse 21 A RDS(ON) , max @ VGS=10V 750 mΩ Qg 9.2 nC Product Name Package Marking OSG70R750DF TO252 OSG70R750D Marking Information Package & Pin Information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage VDS 700 V Gate-source voltage VGS ±30 V Continuous drain current1), TC=25 °C 7 ID A Continuous drain current1), TC=100 °C 4.4 Pulsed drain current2), TC=25 °C ID, pulse 21 A IS 7 A IS, pulse 21 A Power dissipation3), TC=25 °C PD 63 W Single pulsed avalanche energy5) EAS 190 mJ MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns Tstg, Tj -55 to 150 °C Symbol Value Unit Thermal resistance, junction-case RθJC 2 °C/W Thermal resistance, junction-ambient4) RθJA 62 °C/W Continuous diode forward current1), TC=25 °C Diode pulsed current2), TC=25 °C Operation and storage temperature Thermal Characteristics Parameter Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Symbol Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Drain-source onstate resistance RDS(ON) Gate-source leakage current IGSS Drain-source leakage current IDSS Min. Typ. Max. Unit VGS=0 V, ID=250 μA 700 750 V VGS=0 V, ID=250 μA, Tj=150 °C V VDS=VGS, ID=250 μA 810 2.0 4.0 0.65 0.75 VGS=10 V, ID=4 A Ω 1.8 100 VGS=10 V, ID=4 A, Tj=150 °C VGS=30 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 Test condition 1 VGS=-30 V μA VDS=700 V, VGS=0 V Page.2 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 459 pF Output capacitance Coss 33.8 pF Reverse transfer capacitance Crss 1.44 pF Turn-on delay time td(on) 17 ns tr 10.1 ns td(off) 28.9 ns tf 23.6 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=50 V, ƒ=1 MHz VGS=10 V, VDS=400 V, RG=25 Ω, ID=4 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 9.2 nC Gate-source charge Qgs 2.4 nC Gate-drain charge Qgd 3.5 nC Vplateau 5.6 V Gate plateau voltage Test condition VGS=10 V, VDS=400 V, ID=4 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 212 ns Reverse recovery charge Qrr 1.7 μC Peak reverse recovery current Irrm 14.2 A Test condition IS=4 A, VGS=0 V VR=400 V, IS=4 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 10 VDS=20V 10 7V 10V Id, Drain current(A) ID, Drain-source current (A) 8 6V 6 4 150 ℃ 25 ℃ 5V 2 VGS= 4.5V 0 1 0 5 10 2 VDS, Drain-source voltage (V) Figure 1. Typ. output characteristics 6 8 10 Figure 2. Typ. transfer characteristics 4 10 3 VGS, Gate-source voltage(V) 10 10 C, Capacitance(pF) 4 VGS, Gate-source voltage(V) Ciss 2 10 Coss 1 10 6 4 2 0 10 8 Crss 0 -1 10 0 20 40 60 80 0 100 10 Qg, Gate charge(nC) VDS, Drain-source voltage (V) Figure 3. Typ. capacitances Figure 4. Typ. gate charge 850 RDS(on) , On-resistance() BVDSS , Drain-source voltage (V) 1.2 800 750 1.0 0.8 0.6 0.4 0.2 700 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj , Juntion temperature (℃ ) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj , Juntion temperature (℃ ) Figure 6. Drain-source on-state resistance Page.4 OSG70R750DF Enhancement Mode N-Channel Power MOSFET 1.2 RDS(ON), On-resistance() Is, Source current(A) 10 o 125 C 1 o 25 C 1.1 1.0 0.9 VGS=7V 0.8 0.7 VGS=10V 0.6 0.5 0.1 0.4 0.6 0.8 1.0 1 1.2 2 3 4 Figure 7. Forward characteristic of body diode 6 7 8 9 10 Figure 8. Drain-source on-state resistance 8 100 6 10 ID, Drain current(A) ID, Drain-source current (A) 5 ID, Drain current(A) VSD, Source-drain voltage(V) 4 2 10us RDS(ON) Limited 1 100s 1ms 10ms 0.1 DC 0 0.01 0 25 50 75 100 125 TC , Case temperature (℃) 150 Figure 9. Drain current Oriental Semiconductor © Copyright Reserved V2.0 1 10 100 VDS, Drain-source voltage(V) 1000 Figure 10. Safe operation area TC=25 °C Page.5 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.6 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Package Information E C H D D1 L5 L3 b3 E1 L4 L1 A2 e θ L A1 L2 A b (L1) Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 θ Min 2.20 0.00 0.97 0.68 5.20 0.43 5.98 6.40 4.63 9.40 1.38 0.88 0.50 0˚ mm Nom 2.30 1.07 0.78 5.33 0.53 6.10 5.30REF 6.60 2.286BSC 10.10 1.50 2.90REF 0.51BSC - Max 2.38 0.20 1.17 0.90 5.46 0.61 6.22 6.73 10.50 1.75 1.28 1.00 8˚ Version 1: TO252-C package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.7 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Package Information E c2 D1 L6 L3 θ1 b3 H θ1 L1 θ1 b2 L4 L5 D Φ K AR M E- 0.1 p To .30± 1 E1 A2 e b θ2 C L A1 A θ L2 C (L1) Symbol A A1 A2 b b1 b2 b3 c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 L5 L6 θ θ1 θ2 Min 2.20 0.00 0.90 0.72 0.71 0.72 5.13 0.47 0.46 0.47 6.00 5.25 6.50 4.70 2.186 9.80 1.40 0.90 0.60 0.15 0˚ 5˚ 5˚ mm Nom 2.30 1.01 0.76 5.33 0.51 6.10 6.60 2.286 10.10 1.50 2.90REF 0.508BSC 0.80 1.80REF 7˚ 7˚ Max 2.38 0.10 1.10 0.85 0.81 0.90 5.46 0.60 0.56 0.60 6.20 6.70 2.386 10.40 1.70 1.25 1.00 0.75 8˚ 9˚ 9˚ Version 2: TO252-J package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.8 OSG70R750DF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TO252-C 2500 2 5000 5 25000 TO252-J 2500 2 5000 5 25000 Product Information Product Package Pb Free RoHS Halogen Free OSG70R750DF TO252 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.9