MSF06065G1

MSF06065G1 MSF06065G1 650V Silicon Carbide Diode Features Benefits -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications Package -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Type : TO-220F -2lead 1、Cathode 2、Anode 1 Absolute Maximum Ratings 2 TC = 25℃ unless otherwise noted Symbol Parameter MSF06065G1 Units VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 6 A IF Continuous Forward Current @Tc=120V IFRM Repetitive Peak Forward Surge Current @TC=25 ̊C tp = 10 ms, Half Sine Wave 24 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C tp= 10 ms, Half Sine Wave 42 A IF Max Non-Repetitive Peak Forward Surge Current @TC=25 ̊C， tp= 10 us，pulse 200 A 46 20 W -55 to +175 ̊C Power Dissipation Ptot TJ , Tstg @Tc=25℃ @Tc=110℃ Operating Junction and Storage Temperature MAPLESEMICONDUCTOR Co.,Ltd http://www.Mplesemi.com page1 Rev1.1 August . 2018 MSF06065G1 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Test Conditions Test Conditions Min Typ Max Unit VF Forward Voltage IF=6A, TC=25°C IF=6A, TC=175°C - 1.45 1.75 1.70 2.0 V IR Reverse Current VR=650V, TC=25°C VR=650V, TC=175°C - 2 40 20 200 μA QC Total Capacitive Charge - 17 - VR =400V, TJ = 25°C Qc= V r C （ V ） dv nC  0 C Total Capacitance VR =0V, TJ = 25°C, f=1MHz VR =200V, TJ = 25°C, f=1MHz VR =400V, TJ = 25°C, f=1MHz - 332 33 28 - pF EC Capacitance Stored Energy VR=400V - 4.3 - μJ Thermal Characteristics Symbol Parameter Typ Unit RθJC Thermal Resistance from Junction to Case 3.22 ℃/W Typical Characteristics 100 12 11 10 O Tj=25 C O Tj=75 C 8 O Tj=75 C O Tj=125 C 7 6 O Tj=125 C 60 O Tj=175 C IR (A) IF (A) 80 O Tj=25 C 9 5 O Tj=175 C 40 4 3 20 2 1 0 0 0.0 0.5 1.0 VF (V) 1.5 2.0 2.5 Figure 1.Forward Characteristics MAPLESEMICONDUCTOR Co.,Ltd http://www.Mplesemi.com 0 100 200 300 400 500 VR (V) 600 700 800 900 Figure 2. Reverse Characteristics page2 Rev1.1 August . 2018 MSF06065G1 Typical Characteristics 350 25 300 20 15 200 Qc (nC) C (pF) 250 150 10 100 5 50 0 0 0.1 1 10 100 VR (V) 1000 Figure 3. Capacitance vs. Reverse Voltage 100 200 300 VR (V) 400 500 600 Figure 4. Total Capacitance Charge vs. Reverse Voltage 8 50 40 6 30 PTot (W) Ec (J) 0 4 2 0 20 10 0 0 100 200 300 400 VR (V) 500 600 25 Figure 5. Capacitance Stored Energy 50 75 100 TC(C) 125 150 175 0.01 0.1 1 Figure 6. Power Derating 60 IF(peak) (A) 45 Thermal Resistance (℃ /W) 10%Duty 20%Duty 30%Duty 50%Duty 70%Duty DC 30 1 0.1 15 0.5 0.3 0.1 0.05 0.02 SinglePulse 0 25 50 75 100 125 TC ℃ 150 175 0.01 1E-6 Figure 7.Current Derating MAPLESEMICONDUCTOR Co.,Ltd http://www.Mplesemi.com 1E-5 1E-4 1E-3 T (sec) Figure 8. Transient Thermal Impedance page3 Rev1.1 August . 2018