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MSP10065G1

MSP10065G1

  • 厂商:

    MAPLESEMI(美浦森)

  • 封装:

    TO220-2

  • 描述:

    二极管配置:独立式;直流反向耐压(Vr):650V;平均整流电流(Io):10A;正向压降(Vf):1.45V@10A;反向电流(Ir):2uA@650V;

  • 数据手册
  • 价格&库存
MSP10065G1 数据手册
MSP10065G1 MSP10065G1 650V Silicon Carbide Schottky Diode Features Benefits -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications Package -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Type : TO-220 -2lead 1、Cathode 2、Anode 1 Absolute Maximum Ratings 2 TC = 25℃ unless otherwise noted Symbol Parameter MSP10065G1 Units VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 10 A IF Continuous Forward Current @Tc=150℃ IFRM Repetitive Peak Forward Surge Current @TC=25 ̊C tp = 10 ms, Half Sine Wave 80 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C tp= 10 ms, Half Sine Wave 105 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C, tp= 10 us,pulse 840 A 138 60 W -55 to +175 ̊C Ptot TJ , Tstg Power Dissipation @Tc=25℃ @Tc=110℃ Operating Junction and Storage Temperature MAPLE SEMICONDUCTOR Co.,Ltd http://www.maplesemi.com page1 Rev1.1 Oct. 2019 TC = 25°C unless otherwise noted Symbol Test Conditions Test Conditions Min Typ Max Unit VF Forward Voltage IF=10A, TC=25°C IF=10A, TC=175°C - 1.45 1.75 1.7 2.00 V IR Reverse Current VR=650V, TC=25°C VR=650V, TC=175°C - 2 40 20 200 μA QC Total Capacitive Charge VR =400V, IF =10A TJ = 25°C Vr Qc=  C ( V ) dv - 28 - MSP10065G1 Electrical Characteristics nC 0 C Total Capacitance VR =0V, TJ = 25°C, f=1MHz VR =200V, TJ = 25°C, f=1MHz VR =400V, TJ = 25°C, f=1MHz - 550 53 48 - pF EC Capacitance Stored Energy VR=400V - 7.0 - μJ Thermal Characteristics Symbol Parameter Typ Unit RθJC Thermal Resistance from Junction to Case 1.09 ℃/W Typical Characteristics 20 100 18 16 14 O Tj=75 C O O 12 Tj=125 C 10 Tj=175 C Tj=25 C 60 O Tj=75 C O O IR (A) IF (A) 80 O Tj=25 C 8 Tj=125 C O Tj=175 C 40 6 4 20 2 0 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 0 Figure 1.Forward Characteristics MAPLE SEMICONDUCTOR Co.,Ltd http://www.maplesemi.com 100 200 300 400 500 VR (V) 600 700 800 Figure 2. Reverse Characteristics page2 Rev1.1 Oct. 2019 900 MSP10065G1 Typical Characteristics 600 40 35 500 30 300 C (pF) 25 Qc (nC) 400 20 15 200 10 100 5 0 0 0.01 0.1 1 10 100 VR (V) 0 1000 Figure 3. Capacitance vs. Reverse Voltage 100 200 300 VR (V) 400 500 600 Figure 4. Total Capacitance Charge vs. Reverse Voltage 150 14 12 120 10 PTot (W) Ec (J) 90 8 6 4 60 30 2 0 0 0 100 200 300 VR (V) 400 500 25 50 175 0.1 1 0.5 Thermal Resistance (C/W) IF(peak) (A) 150 1 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 80 60 40 20 0 125 Figure 6. Power Derating 140 100 100 TC(C ) Figure 5. Capacitance Stored Energy 120 75 600 0.3 0.1 0.1 0.05 0.02 0.01 SinglePulse 25 50 75 100 TC (C) 125 150 175 0.01 1E-6 1E-4 1E-3 T (sec) 0.01 Figure 8. Transient Thermal Impedance Figure 7.Current Derating MAPLE SEMICONDUCTOR Co.,Ltd 1E-5 http://www.maplesemi.com page3 Rev1.1 Oct. 2019
MSP10065G1 价格&库存

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