MSP10065G1
MSP10065G1
650V Silicon Carbide Schottky Diode
Features
Benefits
-650-Volt Schottky Rectifier
-Shorter recovery time
-High-speed switching possible
-High-Frequency Operation
-Temperature-Independent Switching Behavior
-Extremely Fast Switching
-Positive Temperature Coefficient on VF
-Higher safety margin against overvoltage
-Improved efficiency all load conditions
-Increased efficiency compared to Silicon Diode alternatives
-Reduction of Heat Sink Requirements
-Parallel Devices Without Thermal Runaway
-Essentialy No Switching Losses
Applications
Package
-Switch Mode Power Supplies
-Power Factor Correction
-Motor Drives
-HID Lighting
Type : TO-220 -2lead
1、Cathode 2、Anode
1
Absolute Maximum Ratings
2
TC = 25℃ unless otherwise noted
Symbol
Parameter
MSP10065G1
Units
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
10
A
IF
Continuous Forward Current
@Tc=150℃
IFRM
Repetitive Peak Forward Surge Current @TC=25 ̊C
tp = 10 ms, Half Sine Wave
80
A
IFSM
Non-Repetitive Peak Forward Surge Current @TC=25 ̊C
tp= 10 ms, Half Sine Wave
105
A
IFSM
Non-Repetitive Peak Forward Surge Current
@TC=25 ̊C, tp= 10 us,pulse
840
A
138
60
W
-55 to +175
̊C
Ptot
TJ , Tstg
Power Dissipation
@Tc=25℃
@Tc=110℃
Operating Junction and Storage Temperature
MAPLE SEMICONDUCTOR Co.,Ltd
http://www.maplesemi.com
page1
Rev1.1 Oct. 2019
TC = 25°C unless otherwise noted
Symbol
Test Conditions
Test Conditions
Min
Typ
Max
Unit
VF
Forward Voltage
IF=10A, TC=25°C
IF=10A, TC=175°C
-
1.45
1.75
1.7
2.00
V
IR
Reverse Current
VR=650V, TC=25°C
VR=650V, TC=175°C
-
2
40
20
200
μA
QC
Total Capacitive Charge
VR =400V, IF =10A
TJ = 25°C
Vr
Qc= C ( V ) dv
-
28
-
MSP10065G1
Electrical Characteristics
nC
0
C
Total Capacitance
VR =0V, TJ = 25°C, f=1MHz
VR =200V, TJ = 25°C, f=1MHz
VR =400V, TJ = 25°C, f=1MHz
-
550
53
48
-
pF
EC
Capacitance Stored Energy
VR=400V
-
7.0
-
μJ
Thermal Characteristics
Symbol
Parameter
Typ
Unit
RθJC
Thermal Resistance from Junction to Case
1.09
℃/W
Typical Characteristics
20
100
18
16
14
O
Tj=75 C
O
O
12
Tj=125 C
10
Tj=175 C
Tj=25 C
60
O
Tj=75 C
O
O
IR (A)
IF (A)
80
O
Tj=25 C
8
Tj=125 C
O
Tj=175 C
40
6
4
20
2
0
0
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
0
Figure 1.Forward Characteristics
MAPLE SEMICONDUCTOR Co.,Ltd
http://www.maplesemi.com
100
200
300
400
500
VR (V)
600
700
800
Figure 2. Reverse Characteristics
page2
Rev1.1 Oct. 2019
900
MSP10065G1
Typical Characteristics
600
40
35
500
30
300
C (pF)
25
Qc (nC)
400
20
15
200
10
100
5
0
0
0.01
0.1
1
10
100
VR (V)
0
1000
Figure 3. Capacitance vs. Reverse Voltage
100
200
300
VR (V)
400
500
600
Figure 4. Total Capacitance Charge vs. Reverse Voltage
150
14
12
120
10
PTot (W)
Ec (J)
90
8
6
4
60
30
2
0
0
0
100
200
300
VR (V)
400
500
25
50
175
0.1
1
0.5
Thermal Resistance (C/W)
IF(peak) (A)
150
1
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
80
60
40
20
0
125
Figure 6. Power Derating
140
100
100
TC(C )
Figure 5. Capacitance Stored Energy
120
75
600
0.3
0.1
0.1
0.05
0.02
0.01
SinglePulse
25
50
75
100
TC (C)
125
150
175
0.01
1E-6
1E-4
1E-3
T (sec)
0.01
Figure 8. Transient Thermal Impedance
Figure 7.Current Derating
MAPLE SEMICONDUCTOR Co.,Ltd
1E-5
http://www.maplesemi.com
page3
Rev1.1 Oct. 2019
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