MSNP10065G1

MSNP10065G1 MSNP10065G1 650V Silicon Carbide Schottky Diode Features Benefits -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications Package -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Type : TO-220 -2lead 1、Cathode 2、Anode 1 Absolute Maximum Ratings 2 TC = 25℃ unless otherwise noted Symbol Parameter MSNP10065G1 Units VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V IF Continuous Forward Current @Tc=135℃ 10 A IFRM Repetitive Peak Forward Surge Current @TC=25 ̊C tp = 10 ms, Half Sine Wave 80 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C tp= 10 ms, Half Sine Wave 90 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C, tp= 10 us，pulse 840 A 71 31 W Ptot Power Dissipation @Tc=25℃ @Tc=110℃ TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ̊C VI Isolation Blocking Voltage (leg to case) 3000 V Meipusen Co.,Ltd http://www.meipusen.com page1 Rev1.0 Sep . 2019 MSNP10065G1 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Test Conditions Test Conditions Min Typ Max Unit VF Forward Voltage IF=10 A, TC=25°C IF= 10 A, TC=175°C - 1.45 1.75 1.7 2.00 V IR Reverse Current VR=650V, TC=25°C VR=650V, TC=175°C - 2 40 20 200 μA QC Total Capacitive Charge VR =400V, TJ = 25°C Vr Qc= 0 C （ V ） dv - 28 - C Total Capacitance VR =0V, TJ = 25°C, f=1MHz VR =200V, TJ = 25°C, f=1MHz VR =400V, TJ = 25°C, f=1MHz - 550 53 48 - pF EC Capacitance Stored Energy VR=400V - 7.0 - μJ nC Thermal Characteristics Symbol Parameter Typ Unit RθJC Thermal Resistance from Junction to Case 2.1 ℃/W Typical Characteristics 100 20 18 16 14 O Tj=75 C O Tj=25 C 60 O Tj=125 C 12 O Tj=75 C O O Tj=175 C 10 IR (A) IF (A) 80 O Tj=25 C 8 Tj=125 C O Tj=175 C 40 6 20 4 2 0 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 Figure 1.Forward Characteristics Meipusen Co.,Ltd http://www.meipusen.com 0 100 200 300 400 500 VR (V) 600 700 800 Figure 2. Reverse Characteristics page2 Rev1.0 Sep . 2019 900 MSNP10065G1 Typical Characteristics 600 40 35 500 30 Qc (nC) C (pF) 400 300 25 20 15 200 10 100 5 0 0 0.01 0.1 1 10 100 VR (V) 1000 Figure 3. Capacitance vs. Reverse Voltage 0 100 200 300 VR (V) 400 500 600 Figure 4. Total Capacitance Charge vs. Reverse Voltage 80 14 12 60 8 Ptot (W) Ec (J) 10 6 40 20 4 2 0 0 0 100 200 300 VR (V) 400 500 600 25 Figure 5. Capacitance Stored Energy 50 75 100 125 150 175 0.01 0.1 1 TC(C ) Figure 6. Power Derating 70 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC IF(peak) (A) 50 1 Thermal Resistance (C /W) 60 40 30 20 10 0 25 50 75 TC (C) 100 125 150 175 Figure 7.Current Derating Meipusen Co.,Ltd http://www.meipusen.com 0.5 0.3 0.1 0.1 0.05 0.02 0.01 SinglePulse 0.01 1E-6 1E-5 1E-4 1E-3 T (sec) Figure 8. Transient Thermal Impedance page3 Rev1.0 Sep . 2019