MSF08065G1

Pb RoHS MSF08065G1 650V Silicon Carbide Diode Features Benefits -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications Package -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Type : TO-220F -2lead 1、Cathode 2、Anode PIN 1 CASE 1 Absolute Maximum Ratings 2 1 2 PIN 2 TC = 25 ℃ unless otherwise noted Symbol Parameter MSF08065G1 Units VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 8 A IF Continuous Forward Current Tc=120℃ IFRM Repetitive Peak Forward Surge Current tp = 10 ms, Half Sine Wave @TC=25 ̊C 45 A IFSM Non-Repetitive Peak Forward Surge Current tp= 10 ms, Half Sine Wave @TC=25 ̊C 60 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C, tp= 10 us，pulse 250 A 50 22 W -55 to +175 ̊C Ptot TJ , Tstg Power Dissipation @Tc=25 ℃ @Tc=110 ℃ Operating Junction and Storage Temperature MAPLESEMI CONDUCTOR Co.,Ltd http://www.Maplesemi.com page1 Rev1.0 Oct . 2019 MSF08065G1 LEAD FREE TC = 25°C unless otherwise noted Symbol Test Conditions Test Conditions Min Typ Max Unit VF Forward Voltage IF=8A, TC=25°C IF=8A, TC=175°C - 1.45 1.75 1.7 2.0 V IR Reverse Current VR=650V, TC=25°C VR=650V, TC=175°C - 2 40 20 200 μA QC Total Capacitive Charge VR =400V, IF =8A TJ = 25°C Vr Qc=  C （ V ） dv - 22 - MSF08065G1 Electrical Characteristics nC 0 C Total Capacitance VR =0V, TJ = 25°C, f=1MHz VR =200V, TJ = 25°C, f=1MHz VR =400V, TJ = 25°C, f=1MHz - 440 44 38 - pF EC Capacitance Stored Energy VR=400V - 5.8 - μJ Thermal Characteristics Symbol Parameter Typ Unit RθJC Thermal Resistance from Junction to Case 2.95 ℃/W Typical Characteristics 16 100 14 O Tj=25 C 12 80 O Tj=25 C O Tj=75 C O Tj=75 C O Tj=125 C O Tj=125 C 60 O Tj=175 C IR (A) IF (A) 10 8 6 4 O Tj=175 C 40 20 2 0 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 0 200 300 400 500 600 700 800 VR (V) Figure 1.Forward Characteristics MAPLESEMI CONDUCTOR Co.,Ltd 100 http://www.Maplesemi.com Figure 2. Reverse Characteristics page2 Rev1.0 Oct . 2019 900 MSF08065G1 Typical Characteristics 500 35 30 400 25 Qc (nC) C (pF) 300 200 20 15 10 100 5 0 0 0.01 0.1 1 VR (V) 10 100 1000 Figure 3. Capacitance vs. Reverse Voltage 50 8 40 Ptot (W) 10 Ec (J) 60 6 20 2 10 0 100 200 300 400 VR (V) Figure 5. Capacitance Stored Energy 500 200 300 VR (V) 400 500 600 25 50 75 TC (C) 100 125 150 Figure 6. Power Derating 60 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 50 40 IF(peak) (A) 30 20 10 0 25 50 75 100 125 150 175 TC ( °C ) Figure 7.Current Derating MAPLESEMI CONDUCTOR Co.,Ltd 600 30 4 0 100 Figure 4. Total Capacitance Charge vs. Reverse Voltage 12 0 0 Figure 8. Transient Thermal Impedance http://www.Maplesemi.com page3 Rev1.0 Oct . 2019 175