SLD60R380S2

General Description Features This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th These d i devices are wellll suited it d for f AC/DC power conversion i in switching mode operation for higher efficiency. - 11A, 600V, RDS(on)typ= 0.3Ω@VGS = 10 V - Low gate charge ( typical 22nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability LEAD FREE Pb RoHS D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings g Symbol VDSS ID IDM VGSS TC = 25°C unless otherwise noted Parameter SLD60R380S2 SLU60R380S2 Units Drain-Source Voltage 600 V Drain Current - Continuous (TC = 25℃) 11 A - Continuous (TC = 100℃) 7 A (Note 1) 44 ±30 A V Drain Current - Pulsed Gate-Source Voltage EAS Single g Pulsed Avalanche Energy gy (Note 2) 310 mJ IAR dv/dt Avalanche Current Peak Diode Recovery dv/dt (Note 1) 11 15 A V/ns PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 89 W 0.71 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SLD60R380S2 RθJC Thermal Resistance, Junction-to-Case SLU60R380S2 Units 1.44 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. -- ℃/W RθJA Th Thermal lR Resistance, i t JJunction-to-Ambient ti t A bi t 62 ℃/W Maple Semiconductor CO., LTD http://www.meipusen.com Rev1.0 Nov. 2018 SLD60 0R380S2/SLU U60R380S2 SLD60R380S2/SLU60R380S2 600V N-channel MOSFET Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units 600 -- -- V Off Characteristics Ch t i ti BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 uA VDS = 480 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Gate Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A -- 0.30 0.38 Ω Gate resistance F=1MHZ -- 5.2 -- Ω VDS = 100 V, VGS = 0 V, f = 1.0 MHz -- 634 -- pF -- 38 -- pF -- 2.6 -- pF -------- 10 29 37 23 22 5.0 11 -------- ns ns ns ns nC nC nC Rg Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) ( ) tr td(off) tf Qg Qgs Qgd Turn-On Delayy Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 300 V, ID = 11A, RG = 10 Ω (Note 4, 5) VDS = 480 V, ID = 11A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 11A, -- 371 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us -- 3.8 -- uC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 79 mH, IAS = 2.6A, VDD =100V, RG = 25Ω, Starting TJ = 25°C 3. ISD  11A, di/dt  100A/us, VDD  BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature Maple Semiconductor CO., LTD http://www.meipusen.com Rev1.0 Nov. 2018 SLD60 0R380S2/SLU U60R380S2 Electrical Characteristics 100 100 10 150 ℃ 25 ℃ ID（A) ID（A) 10 -55 ℃ VGS 15V 6 0V 6.0V 5.5V 5.0V 4.5V 1 1 Notes: 1.250us pulse test 2.VDS=50V Notes: 1.250us pulse test 2.TC=25℃ 0.1 0 1 10 VDS（V) 0.1 100 4 2 6 8 VGS（V) 10 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 100 10 360 VGS=10V 340 150℃ ID（A) RDS(ON)(mΩ) 380 1 -50℃ 25℃ 320 VGS=20V 300 0 2 10 6 Notes: 1.250us pulse test 2.VGS=0V Notes: TC=25 ℃ 0.1 0.2 12 0.4 0.6 ID（A) Figure 3. On-Resistance Variation vs g Drain Current and Gate Voltage 0.8 VGS（V) 1.0 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 104 12 10 Ciss 8 Coss VGS(V) Capcitan nce(pF) 103 102 10 1 0.1 Crss CISS=CGS+CGD(CDS=shorted) COSS=CDS+CGD CRSS=CGD VDS（V) 10 Notes: ID=11A 2 100 0 0 10 20 30 Totall Gate Charge h QG(nC) Figure 5. Capacitance Characteristics Maple Semiconductor CO., LTD VDS=480V 4 Notes: 1.F=1MHZ 2.VGS=0V 1 6 Figure 6. Gate Charge Characteristics http://www.meipusen.com Rev1.0 Nov. 2018 SLD60 0R380S2/SLU U60R380S2 Typical Characteristics (Continued) 3.0 1.2 RDS(ON)(Normalized) BVDSS(Normalized) B 2.5 1.1 1.0 09 0.9 0.8 -100 Notes: 1.VGS=0V 2.ID=250uA 1.5 1.0 Notes: 1.VGS=10V 2.ID=5.5A 0.5 0.0 -100 200 100 0 2.0 200 100 0 Junction Temperature Tj(℃) Junction Temperature Tj(℃) Figure 8. On-Resistance Variation vs Temperature p Figure 7. Breakdown Voltage Variation p vs Temperature 12 102 10 100uS 101 1mS 8 Operation in This Area Is Limited RDS(ON) ID(A) ID(A) 10mS 100 DC 6 4 10-1 2 Notes: TC=25 ℃ 10-2 100 101 VDS（V) 102 103 25 50 75 100 125 150 Case Temperature Tc(℃) Figure 9. 9 Maximum Safe Operating Area Maple Semiconductor CO., LTD 0.0 Figure 10. 10 Maximum Drain Current vs Case Temperature http://www.meipusen.com Rev1.0 Nov. 2018 SLD60 0R380S2/SLU U60R380S2 Typical Characteristics SLD60 0R380S2/SLU U60R380S2 Gate Charge Test Circuit & Waveform Current Regulator 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Charge Current Sampling (IG) Current Sampling (ID) Resistor Resistor Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms LL EAS = VDS Vary tp to obtain required peak ID 1 ---- LL IAS2 2 BVDSS -------------------BVDSS -- VDD BVDSS ID IAS RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Maple Semiconductor CO., LTD http://www.meipusen.com Time Rev1.0 Nov. 2018 + DUT VDS -IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dtcontrolled controlledby by밨 RGG ••dv/dt • I SD controlled by pulse period • IS controlled by Duty Factor 밆? Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop Maple Semiconductor CO., LTD http://www.meipusen.com Rev1.0 Nov. 2018 SLD60 0R380S2/SLU U60R380S2 Peak Diode Recovery dv/dt Test Circuit & Waveforms