SS320F

SS32F THRU SS320F HD AF50 SMAF Plastic-Encapsulate Diodes Features ●Io 3A SMAF ●VRRM 20V-200V ●High surge current capability ● Polarity: Color band denotes cathode ● Chip Size 1.27mm X 1.27mm Applications ● Rectifier Marking ● SS32F-SS320F : SS32-SS320 SS3 Item Symbol Unit Test Conditions 2F 3F 4F 5F 6F 8F 10F 15F 20F Repetitive Peak Reverse Voltage VRRM V 20 30 40 50 60 80 100 150 200 Maximum RMS Voltage V RMS V 14 21 28 35 42 56 70 105 140 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance 3.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 70 TJ ℃ Storage Temperature TSTG ℃ IEC61000-4-2 ESD Voltage V ESD KV Junction Temperature -55~+125 -55~+150 -55 ~ +150 Air Model _ 15 + _ 8 + Contact Model Electrical Characteristics (T =25℃ Unless otherwise specified） Item Peak Forward Voltage Symbol Unit VF IRRM1 Peak Reverse Current Thermal Resistance(Typical) IRRM2 RθJ-C IF =3.0A V mA RθJ-A RθJ-L Test Condition ℃/ W VRM=VRRM SS3 2F 3F 4F 0.55 5F 6F 0.7 8F 10F 15F 20F 0.85 0.95 Ta =25℃ 0.5 0.1 Ta =100℃ 10 5.0 Between junction and ambient 55 Between junction and terminal 17 Between junction and case 50 Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 3.0 SS32F-SS34F 90 SS35F-SS320F 2.5 8.3ms Single Half Sine Wave JEDEC Method 80 2.0 70 1.5 60 1.0 50 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5mm×5mm)Copper Pad Areas 0.5 40 0 0 25 50 75 125 100 1 150 TL(℃ ) 2 20 100 Number of Cycles FIG.4：TYPICAL REVERSE CHARACTERISTICS FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 IR(mA) IF(A) 10 TJ=25℃ Pulse width=300us 1% Duty Cycle 100 SS32F-SS36F SS38F-SS320F 10 10 Tj=75℃ 1.0 1.0 Tj=75℃ 0.1 SS32F-SS34F SS35F-SS36F SS38F-SS310F SS315F-SS320F 0.1 0.01 Tj=25℃ 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 . 1.4 VF(V) 0 20 40 High Diode Semiconductor 60 80 100 Voltage(%) 2 SMAF .193(4.90) .173(4.40) .047(1.20) .035(0.90) .146(3.70) .130(3.30) .063(1.60) .106(2.70) .051(1.30) .094(2.40) .007(0.18) .005(0.12) .051(1.30) .031(0.80) Dimensions in inches and (millimeters) SMAF 1.9 4.65 0.55 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Dev ices- SMAF High Diode Semiconductor 4 SMAF P acking Information Inner Box Inner Box 12000pcs Inner Box 180*182*70 120,000pcs High Diode Semiconductor 390*390*250 5