SVT078R0ND

UMW R SVT078R0ND 68V N-Channel Power Mosfet UMW SVT078R0ND General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 68V,ID =88A RDS(ON),6.3mΩ(Typ) @ VGS =10V Low On-Resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Application Power switching applications DC-DC converters UPS power supply Package Marking and Ordering Information Device Marking SVT078R0ND Device Device Package Reel Size Tape width Quantity SVT078R0ND TO-252 330mm 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 68 V Gate-Source Voltage VGS ±20 V 88 A 61 A Drain Current-ContinuousNote3 TC=25℃ ID TC=100℃ Drain Current-PulsedNote1 IDM 292 A Avalanche Energy EAS 550 mJ PD 167 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Note4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction to Case-sink RθJC - - 0.9 ℃/W Thermal Resistance,Junction to Ambient RθJA - - 75 ℃/W www.umw-ic.com 1 友台半导体有限公司 UMW R SVT078R0ND Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions VGS=0V,IDS=250uA Min. Typ. Max. Unit 68 - - V Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS=68V,VGS=0V - - 1.0 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 2.5 3.0 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=30A - 6.3 7.5 mΩ Symbol Conditions Min. Typ. Max. Unit - 4100 - - 323 - - 242 - Min. Typ. Max. - 25.5 - DYNAMIC CHARACTERISTICS Parameter Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss VDS=30V,VGS=0V, f=1MHz pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol Conditions Td(on) tr VDS=30V,ID=30A, - 92.9 - Td(off) VGS=10V, RGEN=6Ω - 74.3 - - 70.4 - - 86 - - 24.3 - - 26.4 - tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=30V,IDS=20A, VGS=10V Unit ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Drain-Source Diode Forward Voltage Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=30A - - 1.3 V - 27.9 - nS - 33.6 - nC Reverse Recovery Time trr Reverse Recovery Charge Qrr IF=50A,dI/dt=100A/us Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. www.umw-ic.com 2 友台半导体有限公司 UMW R SVT078R0ND Typical characteristics diagrams www.umw-ic.com 3 友台半导体有限公司 UMW R www.umw-ic.com SVT078R0ND 4 友台半导体有限公司 UMW R SVT078R0ND Typical Test Circuit and Waveform www.umw-ic.com 5 友台半导体有限公司 UMW R www.umw-ic.com SVT078R0ND 6 友台半导体有限公司 UMW R www.umw-ic.com SVT078R0ND 7 友台半导体有限公司