SI9948AEY-T1-E3-VB

SI9948AEY-T1-E3 www.VBsemi.com Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d, e RDS(on) (Ω) 0.059 at VGS = - 10 V - 5.3 0.069 at VGS = - 4.5 V - 5.0 • Halogen-free • TrenchFET® Power MOSFET • 100 % UIS Tested Qg (Typ.) 17 nC RoHS COMPLIANT APPLICATIONS • Load Switches S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C V - 5.0e - 5.3a, b - 5.0a, b - 32e - 4.1 ID TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 2.0a, b - 20 20 4.0 2.5 2.0a, b 1.4a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 5.3e IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 60 ± 20 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. e. Limited by package. 服务热线：400-655-8788 1 SI9948AEY-T1-E3 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time mV/°C 4.5 - 1.0 - 3.0 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 6.3 A VGS = - 4.5 V, ID = - 6.2 A VDS = - 10 V, ID = - 6.1 A - 30 A 0.054 Ω 0.060 23 S 210 pF 180 VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A 32 50 15 25 VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A 4 f = 1 MHz 5.8 10 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω Ω 15 8 15 70 tf 12 25 td(on) 42 70 tr td(off) nC 7.5 45 td(off) µA 1345 VDS = - 15 V, VGS = 0 V, f = 1 MHz td(on) tr V - 31 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω tf 35 60 40 70 16 30 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.1 - 32 IS = - 2 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 34 60 ns 22 40 nC 11 23 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 SI9948AEY-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 VGS = 10 thru 5 V 12 0.8 TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 4 V 8 4 0.6 0.4 TC = 25 °C 0.2 VGS = 3 V TC = 125 °C 0 0.0 0.5 1.0 1.5 0.0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 2400 0.08 1800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS = 4.5 V 0.06 VGS = 10 V Ciss 1200 600 0.04 Coss Crss 0 0.02 0 10 20 30 0 40 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = - 6 . 1 A ID = - 6 . 3 A 8 VDS = 15 V 6 VDS = 7.5 V VDS = 22.5 V 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.2 VGS = 10 V 0.9 2 VGS = 4.5 V 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge 36 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 SI9948AEY-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 10 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = - 6 . 3 A TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.06 TJ = 125 °C 0.04 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 100 80 0.4 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 2 ID = 1 mA 60 40 0.0 20 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 0.1 10 s 1 s, DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 SI9948AEY-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 I D - Drain Current (A) 12 9 Package Limited 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 6.0 2.0 4.8 1.6 3.6 1.2 Power (W) Power (W) Current Derating* 2.4 0.8 0.4 1.2 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 SI9948AEY-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDM Z thJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 SI9948AEY-T1-E3 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 服务热线：400-655-8788 7 SI9948AEY-T1-E3 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 SI9948AEY-T1-E3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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