MMBT4403

UMW R UMW MMBT4403 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor MARKING ：2T 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE DC current gain VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V VCE= -10V, IC= -20mA Transition frequency fT Detay time td VCC=-30V,VEB=-2V, 15 ns Rise time tr IC=-150mA.IB1=-15mA 20 ns Storage time ts VCC=-30V, IC=-150mA. 225 ns Fall time tf IB1= IB2=-15mA 30 ns www.umw-ic.com 1 f = 100MHz 200 MHz 友台半导体有限公司 UMW R UMW MMBT4403 Typical Characterisitics Static Characteristic -200 —— IC COMMON EMITTER VCE=-2V hFE Ta=100℃ DC CURRENT GAIN COLLECTOR CURRENT COMMON EMITTER Ta=25℃ -0.9mA -0.8mA -0.7mA -150 hFE 1000 -1mA IC (mA) -250 -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 Ta=25℃ 100 -0.2mA IB=-0.1mA -0 10 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat -700 —— VCE -1 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) IC (mA) IC —— β=10 -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -3 -1 -600 -100 VBEsat -1.2 β=10 -10 -10 COLLECTOR CURRENT (V) -10 -100 -30 COLLECTOR CURRENT IC -600 IC -600 -1 -3 (mA) -10 -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 50 —— IC -600 (mA) VCB/ VEB f=1MHz IE=0/IC=0 (pF) -10 C Ta=100℃ Ta=25℃ -1 -0.1 -0.0 -0.4 Cob 10 CAPACITANCE COLLECTOR CURRENT Ta=25℃ Cib -100 IC (mA) COMMON EMITTER VCE=-2V -0.8 1 -0.1 -1.2 -1 fT -600 -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— IC PC 400 —— V -30 (V) Ta VCE=-10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ -100 -10 300 200 100 0 -1 -10 -3 COLLECTOR CURRENT www.umw-ic.com IC 0 -30 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBT4403 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司