2SC3265

UMW R UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors 2SC3265 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=30 V, IE=0 0.1 μA Collector cut-off current IEBO VEB=5 V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC= 100mA Collector-emitter saturation voltage VBE Transition frequency fT Collector output capacitance VCE=1V,IC=10mA VCE=5V, IC=10mA f=100MHz Cob 320 IC=500mA, IB=20mA VCE(sat) base-emitter voltage 100 VCB=10V,IE=0,f=1MHZ 0.5 0.5 V 0.8 V 120 MHz 13 pF CLASSIFICATION OF hFE Rank Range Marking www.umw-ic.com O Y 100-200 160-320 EO EY 1 友台半导体有限公司 UMW R UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors Typical Characterisitics Static Characteristic 160 COMMON EMITTER Ta=25℃ 450uA hFE DC CURRENT GAIN 400uA 350uA 300uA 80 250uA 200uA 150uA 40 —— IC Ta=100℃ 120 IC (mA) 500uA COLLECTOR CURRENT hFE 400 300 Ta=25℃ 200 100 100uA COMMON EMITTER VCE=1V IB=50uA 0 0 0.0 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 10 3 IC VBEsat 1.2 300 100 30 COLLECTOR CURRENT (V) IC Ta=100℃ 100 Ta=25℃ 30 IC —— Ta=25℃ 0.8 Ta=100℃ 0.4 β=25 β=25 10 0.0 1 10 3 IC 800 300 100 30 COLLECTOR CURRENT IC 1 800 10 3 (mA) COLLECTOR CURRENT —— VBE Cob/ Cib 100 —— IC 300 800 (mA) VCB/ VEB Cib (mA) Ta=100℃ (pF) 30 C 100 30 CAPACITANCE IC 100 30 300 COLLECTOR CURRENT 800 (mA) 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 2.5 Ta=25℃ 10 10 Cob 3 f=1MHz IE=0/IC=0 3 COMMON EMITTER VCE=1V 1 0.2 0.4 0.6 0.8 1.0 Ta=25℃ 1 0.1 1.2 fT 400 1 0.3 —— IC PC 250 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V 20 (V) Ta VCE=5V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 200 100 5 200 150 100 50 0 10 COLLECTOR CURRENT www.umw-ic.com 100 30 IC 0 (mA) 25 50 75 100 AMBIENT TEMPERATURE 2 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司