MMBTA42

UMW R UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A ICM Collector Current-Peak 0.5 A PC Collector Power dissipation 0.35 W RӨJA Thermal Resistance, junction to Ambient 357 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 100 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain fT Transition frequency www.umw-ic.com 1 VCE= 20V, IC= 10mA, f=30MHz 50 200 MHz 友台半导体有限公司 UMW R UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors IC 18 VCE —— 90uA —— IC COMMON EMITTER Ta=25℃ hFE 80uA 70uA DC CURRENT GAIN (mA) 12 COLLECTOR CURRENT 14 IC 16 hFE 1000 60uA 50uA 10 40uA 8 30uA 6 Ta=100℃ Ta=25℃ 100 20uA 4 IB=10uA COMMON EMITTER VCE=10V 2 10 0.1 0 0 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 20 22 IC 10 VBEsat —— 900 Ta=100 ℃ 100 1 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 500 18 VCE (V) Ta=25℃ 100 IC (mA) IC Ta=25℃ 600 Ta=100 ℃ β=10 β=10 10 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC 300 0.1 100 fT VBE —— IC 100 (mA) IC (MHz) 300 fT 1 300 600 900 COMMON EMITTER VCE=20V Ta=25℃ 0.1 0 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 10 COMMON EMITTER VCE=10V 10 0.1 1200 1 Cob/Cib 100 —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ (pF) C 10 Cob 1 0.1 1 REVERSE VOLTAGE www.umw-ic.com 10 V PC 400 f=1MHz IE=0/IC=0 Cib 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE 10 COLLECTOR CURREMT (mA) (mA) IC COLLECTOR CURRENT 1 —— IC 100 (mA) Ta 300 200 100 0 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司