MMBT5401

UMW R UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT–23 MARKING: 2L 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Power Dissipation 0.3 W Thermal Resistance from Junction to Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO hFE(1) DC current gain hFE(2) * hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage * * Test conditions Min Typ Max Unit IC=-100µA, IE=0 -160 V IC=-1mA, IB=0 -150 V IE=-10µA, IC=0 -5 V VCB=-120V, IE=0 -0.1 μA VEB=-4V, IC=0 -0.1 μA VCE=-5V, IC=-1mA 80 VCE=-5V, IC=-10mA 100 VCE=-5V, IC=-50mA 50 300 VCE(sat)1 * IC=-10mA, IB=-1mA -0.2 V VCE(sat)2 * IC=-50mA, IB=-5mA -0.5 V VBE(sat)1 * IC=-10mA, IB=-1mA -1 V VBE(sat)2 * IC=-50mA, IB=-5mA -1 V Transition frequency fT VCE=-5V,IC=-10mA, f=30MHz 100 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE (2) RANK L H RANGE 100-200 200-300 www.umw-ic.com 1 友台半导体有限公司 UMW R UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors Static Characteristic -20 -100uA VCE=-5V COMMON EMITTER Ta=25℃ -90uA o hFE -70uA 200 -12 -60uA -10 -50uA -8 -40uA -6 Ta=100 C 250 -80uA DC CURRENT GAIN (mA) -14 COLLECTOR CURRENT -16 IC -18 hFE —— IC 300 150 o Ta=25 C 100 -30uA -4 50 -20uA -2 IB=-10uA -0 -0 -3 0 -6 -9 COLLECTOR-EMITTER VOLTAGE VCE -1 VBEsat —— IC -1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0.6 Ta=100℃ -0.4 -0.2 -1 -10 COLLECTOR CURRENT IC IC -0.1 Ta=25℃ -1 -10 Cob / Cib 100 IC (mA) —— VCB / VEB VCE=-5V o (pF) o Ta=100 C Ta=25℃ -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 10 Cob 1 -0.5 -1.0 -1 -10 REVERSE VOLTAGE VBE(V) —— IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) 300 250 fT (MHz) Cib C -10 CAPACITANCE COLLECTOR CURRENT IC (mA) f=1MHz IE=0 / IC=0 Ta=25 C -0.1 -0.0 TRANSITION FREQUENCY -600 -100 COLLECTOR CURRENT (mA) IC —— V BE -100 (mA) Ta=100℃ -0.01 -0.1 -600 -100 IC β=10 Ta=25℃ -0.0 -0.1 -600 -100 VCEsat —— -1 β=10 -0.8 -10 COLLECTOR CURRENT (V) 200 150 100 50 —— V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C 0 0.0 -0 -5 -10 -15 COLLECTOR CURRENT www.umw-ic.com -20 IC -25 -30 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司