MMBTA92

UMW R UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Symbol Collector-Base Voltage Parameter -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance from Junction to Ambient 417 ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE= -10V, IC= -1mA 60 hFE(2) VCE= -10V, IC=-10mA 100 hFE(3) VCE= -10V, IC=-30mA 60 DC current gain 200 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 Transition frequency www.umw-ic.com fT VCE=-20V, IC= -10mA f=30MHz 1 50 V V MHz 友台半导体有限公司 UMW R UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors IC 70 (mA) IC hFE DC CURRENT GAIN IC -350uA -300uA 40 -250uA -200uA 30 -150uA 20 Ta=100℃ Ta=25℃ 100 -100uA 10 IB=-50uA COMMON EMITTER VCE= -10V 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 20 10 -0.1 24 -1 VCE (V) -10 -100 COLLECTOR CURRENT IC VBEsat —— -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— COMMON EMITTER Ta=25℃ -400uA 50 hFE 1000 -450uA 60 COLLECTOR CURRENT VCE —— -500uA Ta=100 ℃ -100 Ta=25℃ IC IC Ta=25℃ -600 Ta=100 ℃ β=10 β=10 -50 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -300 -0.1 -50 -10 COLLECTOR CURREMT (mA) fT VBE -100 IC (mA) IC —— (MHz) 300 fT (mA) T =2 5℃ a TRANSITION FREQUENCY -10 T =1 00℃ a IC COLLECTOR CURRENT -1 -1 100 COMMON EMITTER VCE=-20V COMMON EMITTER VCE= -10V Ta=25℃ 10 -0.1 -0.1 -0 -300 -600 -900 -1200 -1 Cob/Cib 100 —— VCB/VEB (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ C 10 Cob 1 -0.1 -1 REVERSE VOLTAGE www.umw-ic.com -10 V PC 350 f=1MHz IE=0/IC=0 Cib -10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE -300 (mA) —— IC -100 (mA) Ta 300 250 200 150 100 50 0 -20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司