S8550

R S8550 TRANSISTOR(PNP) S E M I C O N D U C T O R SOT-23 FEATURES  Complimentary to S8050 1. BASE Collector current: IC=0.5A  MARKING : 2. EMITTER 3. COLLECTOR 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA hFE(1) VCE= -1V, IC= -50mA 120 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V DC current gain fT Transition frequency VCE= -6V, IC= -20mA 400 150 f=30MHz MHz CLASSIFICATION OF hFE(1) Rank Range L H 120-200 200-350 JINAN JINGHENG ELECTRONICS CO., LTD. 2-1 HTTP://WWW.JINGHENG.CN / S8550 JINAN JINGHENG ELECTRONICS CO., LTD. 2-2 HTTP://WWW.JINGHENG.CN