AGM310A

AGM310A ● General Description Product Summary The AGM310A combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance BVDSS RDSON ID 30V 9.7mΩ 28A PDFN5*6 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM310A AGM310A PDFN5*6 ----- ----- 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 28 A Drain Current-Continuous(Tc=100℃) 22 A Drain Current-Continuous@ Current-Pulsed (Note 2) 70 A Maximum Power Dissipation(Tc=25℃) 40 w Maximum Power Dissipation(Tc=100℃) 16 w Avalanche energy (Note 3) 75 mJ -55 To 150 ℃ Typ Max Unit VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.1 ℃/W www.agm-mos.com 1 VER2.5 AGM310A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1.0 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V gFS Forward Transconductance VDS=10V,ID=5A -- 10 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=15A -- 9.7 14 mΩ VGS=4.5V, ID=15A -- 15 22 mΩ -- 850 -- pF -- 130 -- pF -- 98 -- pF -- 1.9 -- 4.7 -- nS -- 11 -- nS -- 17 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz -- Ω Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 5.6 -- nS Qg Total Gate Charge -- 16 -- nC -- 3.0 -- nC -- 3.8 -- nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=10V,VDS=15V RL=0.75Ω,RGEN=3.3Ω VGS=10V, VDS=15V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VG=VD=0V , Force Current -- -- 28 A VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.2 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature. Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM310A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=10V VGS=4.5V 25 0.2 0 0 0 0 50 100 150 Temperature (。C) 0.5 1 1.5 Drain-Source voltage (V) 200 Fig.3 Threshold Voltage V.S Junction Temperature 2 Fig.4 Resistance V.S Drain Current 2.5 20 ON Resistance Vgs(th ) 2 1.5 1 10 0.5 0 -50 50 Junction Temperature 0 150 0 Fig.5 On-Resistance VS Gate Source Voltage 30 Fig.6 On-Resistance V.S Junction Temperature 1.5 Normalized ON-Resistance 14 12 RDson(mΩ) 10 20 Drain Current(A) 10 8 6 4 2 0 1 0.5 3 www.agm-mos.com 5 7 VGS( V ) 9 -50 3 0 50 100 Temperature 150 VER2.5 AGM310A Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.5 k AGM310A MILLIMETER SYMBO L MIN Typ. A 0.900 1.000 A1 0.254 REF. A2 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 5 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 10˚ 1²˚ 0 8˚ Ø 1.100 d www.agm-mos.com MA X 1.100 1.200 1.300 0.100 VER2.5 AGM310A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5