AO3404
Rev-1.1
www.elecsuper.com
SuperMOS –SOT-23 30V BVDSS 16mΩ RDS(on) 6.2A ID, N-channel MOSFET
1. Description
The AO3404 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO3404 is Pb-free.
2. Features
30V, RDS(ON)=16mΩ(Typ), VGS=10V
Material: Halogen free
RDS(ON)=26mΩ(Typ), VGS=4.5V
Reliable and rugged
Use trench MOSFET technology
Avalanche Rated
High density cell design for low RDS(on)
Low leakage current
3. Applications
PWM applications
DC/DC conversion
Load switch
Power management in portable/desktop PCs
4. Ordering Information
Part
Number
Package
Marking
Material
Packing
Quantity
per reel
Flammability
Rating
Reel
Size
AO3404
SOT-23
R4
Halogen
free
Tape &
Reel
3,000 PCS
UL 94V-0
7
inches
Table-1
Ordering information
5. Pin Configuration and Functions
Pin
Function
2
Source
1
Gate
3
Drain
Outline
Circuit Diagram
D
3
R4
1
G
2
Table-2
S
Pin configuration
6. Specification
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Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
BVDSS
30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
Continuous Drain Current
TA=75°C
Maximum Power Dissipation
TA=25°C
TA=75°C
6.2
ID
A
4.7
1.4
PD
W
0.9
Pulsed Drain Current a
IDM
24.8
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance a
Symbol
Typical
Maximum
Unit
RθJA
72
90
°C/W
Note:
a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
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Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1.0
uA
Gate-to-source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
1.5
2.2
V
VGS=10V, ID=6.2A
16
24
VGS=4.5V, ID=4A
26
38
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
Forward Trans conductance
gFS
VGS=VDS, ID=250uA
1.0
VDS=5.0V, ID=5A
40
mΩ
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
255
VGS=0V, f=1MHz, VDS
=15V
45
pF
35
VGS=10V, VDS=15V,
ID=5A
9.8
12
1.8
2.2
2.2
3
nC
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5
td(ON)
tr
td(OFF)
3.2
VGS=10V, VDS=15V,
RL=2Ω, RGEN=3Ω
ns
24
6
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, IS=1.0A
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0.45
1.2
V
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Rev-1.1
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Typical Characteristic
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8. Dimension (SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Units: mm
Symbol
Dimensions
Symbol
Dimensions
Min.
Max.
Min.
Max.
A
0.900
1.150
E1
2.250
2.550
A1
0.900
1.050
e
b
0.300
0.500
e1
c
0.080
0.150
L
D
2.800
3.00
L1
0.300
0.500
E
1.200
1.400
θ
0°
8°
0.950TYP
1.800
2.000
0.550REF
0.60
0.80
2.02
1.90
Note:
1. Controlling dimension: in millimeters
2. General tolerance: ±0.05mm
3. The pad layout is for reference only
4. Unit: mm
DISCLAIMER
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INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
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