MMBT4401

TRANSISTOR ( NPN) FEATURES SOT-23 Switching transistor 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55to +150 ℃ RӨJA Thermal Resistance, junction to Ambient 357 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 μA Collector cut-off current ICEO VCE=30 V, IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC=150mA Collector-emitter saturation voltage VCE(sat) IC=150mA, Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA Transition frequency fT B=15mA VCE= 10V, IC= 20mA f = 100MHz 100 250 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 300 0.4 V 0.95 V MHz 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.