2SC1623
NPN TRANSISTOR
FEATURES
• High DC current gain :h FE =200(Typ)
VCE =6V,I C =1mA
• High voltage:V CEO =50V
e
A
M
D
e
e
C
a
E
L1
L
HE
1.BASE
2.EMITTER
3.COLLECTOR
SOT-23 mechanical data
UNIT
Marking
mm
Type number
Marking code
2SC1623
L4/L5/L6/L7
mil
A
E
HE
max 1.1 0.15 1.4
3.0
2.6
min 0.9 0.08 1.2
2.8
2.2
max 43
6
55
118 102
20
77
min
3
47
110
12
67
35
C
D
87
e
M
L
L1
a
0.5 1.95 0.55 0.36 0.0
(ref) (ref)
0.3 1.7
0.15
14 0.0
22
(ref) (ref)
6
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Operation Junction andStorage
Temperature Range
Symbol
Value
Unit
V CBO
V CEO
V EBO
IC
PC
60
50
5
100
200
V
V
V
mA
mW
R thJA
625
℃/W
T J ,T stg
-55~+150
℃
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2SC1623
CLASSIFICATION OF h FE
L4
Rank
Range
90-180
L4
Marking
L6
L7
200-400
300-600
L6
L7
L5
135-270
L5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Test conditions
Min
Max
Typ
Unit
60
V
50
V
5
V
Collector-base breakdown voltage
V (BR)CBO
Collector-emitter breakdown voltage
V (BR)CEO I C = 1 mA, I B = 0
Emitter-base breakdown voltage
V (BR)EBO
I E = 100uA, I C = 0
Collector cut-off current
I CBO
V CB = 60V, I E = 0
0.1
uA
Emitter cut-off current
I EBO
V EB = 5V, I C = 0
0.1
uA
DC current gain
h FE
V CE = 6V, I C = 1mA
I C = 100uA, I E = 0
90
600
200
Collector-emitter saturation voltage
V CE(sat)
I C = 100mA, I B = 10mA
0.3
V
Base-emitter saturation voltage
V BE(sat)
I C = 100mA, I B =10mA
1
V
Transition frequency
fT
V CE = 6V, I C = 10mA
250
MH Z
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PAGE:2/3
COLLECTOR CURRENT I C (mA)
Fig.1 Static characteristics
4
I B =10uA
I B =9uA
3
I B =8uA
I B =7uA
I B =6uA
2
I B =5uA
I B =4uA
I B =3uA
1
I B =2uA
I B =1uA
0
4
2
6
8
COLLECTOR POWER DISSIPATION
Pc (mW)
RATING AND CHARACTERISTIC CURVES (2SC1623)
200
150
100
50
0
25
2 5℃
T a=
1
COMMON EMITTER
V CE =6V
BASE-EMITTER SATURATION
VOLTAGE V BEsat (mV)
℃
100
T a=
COLLECTOR CURRENT I C (mA)
Fig.4
I C —— V BE
100
10
0.3
0.6
0.9
1.2
Τ α =25℃
β=10
h FE --Ic
10
TRANSITION FREQUENCY f T (MHz)
DC CURRENT GAIN h FE
COMMON EMITTER
V CE =6V
COMMON EMITTER
V CE =6V
T a =25℃
10
1
C ib
C ob
1
0.1
100
COLLECTOR-EMITTER SATURATION
VOLTAGE V CEsat (mV)
CAPACITANCE C (pF)
70
10
Fig.8
C ob /C ib —— CB /V EB
1
10
REVERSE VOLTAGE V (V)
f T ——I C
I C , COLLECTOR CURRENT (mA)
10
0
100
100
100
100
1
10
1000
I C , COLLECTOR CURRENT (mA)
Fig.7
1
Fig.6
100
1
150
I C , COLLECTOR CURRENT (mA)
1000
10
0.1
125
V BEsat ——I C
1000
Base-Emitter Voltages
Fig.5
100
2000
100
0.1
0.1
0
75
50
Ambient Temperature (°C)
COLLECTOR-EMITTER VOLTAGE V CE (V)
Fig.3
P C —— T a
Fig.2
250
V CEsat ——I C
300
200
100
T a =100℃
T a=25℃
10
0.1
1.0
10
100
I C , COLLECTOR CURRENT (mA)
REV 1.0 2021 JAN
PAGE:3/3
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