MMBT5401

MMBT5401 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -150Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=-150V. Ÿ Collector current IC=-0.6A. Ÿ Transition frequency f T >100MHz @ IC=20mAdc, VCE=-6Vdc, f=100MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2L 3 C 2L 2 1 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage -160 Collector-Emitter Voltage -150 Emitter-Base Voltage -6 Collector Current -0.6 Total Device Dissipation(FR-5 BOARD) 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E MMBT5401 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol Min. Typ.Max.Units IC=-100uA,IE=0 -160 V Collector-Emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150 V Emitter-Base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -5 V Collector cut-off current ICBO VCB=-150V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=-5V,IC=0 HFE IC=-0.1mA,VCE=-5V 40 HFE IC=-1mA,VCE=-5V 70 HFE IC=-10mA,VCE=-5V 100 HFE IC=-20mA,VCE=-5V 60 HFE IC=-50mA,VCE=-5V 30 DC current gain* V(BR)CBO Test Condition Collector-Emitter saturation voltage VCE(SAT) VCE=-150V,IB=0 -0.1 uA -0.1 uA -0.1 uA 0.1 uA 300 IC=-10mA,IB=-1mA -0.5 V IC=-50mA,IB=-5mA -0.6 V IC=-10mA,IB=-1mA -1.1 V IC=-50mA,IB=-5mA -1.2 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=-10V,IE=0,f=1MHZ 5.0 pF Output capacitance COB 8.0 pF Transition ferquency fT Delay time td Rise time tr VEB=-0.5V,IC=0,f=1MHZ IC=-10mA,VCE=-20V, f=100MHZ VCC=-3V,VBE=0.5V, IC=10mA,IB=-1mA Storage time ts Fall time tf VCC=-3V,VBE=0.5V, IB1=IB2=-1mA 100 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width