MMBTA42

MMBTA42 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 300Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=300V. Ÿ Collector current IC=0.3A. Ÿ Transition frequency f T >50MHz @ IC=10mAdc, VCE=20Vdc, f=30MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 1D 3 C 1D 1 2 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage 300 Collector-Emitter Voltage 300 Emitter-Base Voltage 5 Collector Current 0.3 Total Device Dissipation 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E MMBTA42 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Base cut-off current Emitter cut-off current DC current gain* Symbol V (BR)CBO V (BR)CEO V (BR)EBO ICBO ICEX IBEX IEBO HFE HFE HFE HFE HFE Collector-Emitter saturation voltage V CE(SAT) Base-Emitter Saturation voltage* V BE(SAT) Input capacitance Output capacitance C IB C OB Transition ferquency fT Delay time Rise time Storage time Fall time td tr ts tf Test Condition IC=100uA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 V CB=200V,IC=0 Min. Typ.Max.Units 300 300 5 0.25 0.25 0.25 0.25 V CE=200V,IB=0 V EB=4V,IC=0 IC=1mA,V CE=10V IC=0.1mA,V CE=10V IC=10mA,V CE=10V IC=50mA,V CE=10V IC=20mA,V CE=10V IC=20mA,IB=2mA IC=200mA,IB=20mA IC=20mA,IB=2mA IC=200mA,IB=20mA V CB=6V,IE=0,f=1MHZ V EB=0.5V,IC=0,f=1MHZ IC=10mA,V CE=20V, f=30MHZ V CC=30V,V BE=-0.5V, IC=150mA,IB=15mA V CC=30V,V BE=-0.5V, IB1=IB2=15mA 10 40 100 40 30 V V V uA uA uA uA 200 0.2 1 0.9 2 4.0 8.0 50 V V V V pF pF MHZ 35 35 200 50 nS nS nS nS *Pulse Test: Pulse Width