MMBT2907A

MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-60V. Ÿ Collector current IC=-0.6A. Ÿ Transition frequency f T >200MHz @ IC=Ÿ 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with EU RoHS 2002/95/EC Ÿ directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking:2F 3 C 2F B 2 1 E MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Vaule Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Total Device Dissipation 0.3 W Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 O -55~+150 O RθJA TJ TSTG Storage Temperature O C/W C C MMBT2907A ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol Min. Typ. Max. Units IC=-100uA,IE=0 -60 V Collector-Emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -60 V Emitter-Base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=-5V,IC=0 HFE IC=-1mA,VCE=-10V 40 HFE IC=-10mA,VCE=-10V 70 HFE IC=-150mA,VCE=-10V 100 HFE IC=-200mA,VCE=-10V 60 HFE IC=-500mA,VCE=-10V 30 DC current gain* V(BR)CBO Test Condition Collector-Emitter saturation voltage VCE(SAT) VCE=-50V,IB=0 -0.02 uA -0.05 uA -0.05 uA -0.01 uA 300 IC=-150mA,IB=-15mA -0.5 V IC=-500mA,IB=-50mA -1.6 V IC=-150mA,IB=-15mA -1.3 V IC=-500mA,IB=-50mA -2.6 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=-10V,IE=0,f=1MHZ 5.0 pF Ouput capacitance COB 8.0 pF Transition ferquency fT VEB=-0.5V,IC=0,f=1MHZ IC=-50mA,VCE=-20V, f=100MHZ Delay time td Rise time tr Storage time ts Fall time tf 200 MHZ VCC=-20V,VBE=0.5V, IC=-150mA,IB=-15mA 35 nS 35 nS VCC=-6V,VBE=0.5V, IB1=IB2=-15mA 200 nS 50 nS *Pulse Test: Pulse Width