S9012

S9012 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 25Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=-25V. Ÿ Collector current IC=-0.5A. Ÿ Transition frequency f T >150MHz @ IC=20mAdc, VCE=-6Vdc, f=30MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2T1 3 C 2T1 1 2 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage -40 Collector-Emitter Voltage -25 Emitter-Base Voltage -5 Collector Current -0.5 Total Device Dissipation(FR-5 BOARD) 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E S9012 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol V(BR)CBO Test Condition Min. Typ.Max.Units IC=-100uA,IE=0 -40 V Collector-Emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V Emitter-Base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=-5V,IC=0 DC current gain* HFE IC=-50mA,VCE=-1V Collector-Emitter saturation voltage VCE(SAT) VCE=-20V,IB=0 120 -0.1 uA -0.1 uA -0.1 uA -0.1 uA 400 IC=-100mA,IB=-10mA -0.5 V IC=-500mA,IB=-50mA -0.6 V IC=-100mA,IB=-10mA -1.1 V IC=-500mA,IB=-50mA -1.2 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=-10V,IE=0,f=1MHZ 5.0 pF Output capacitance COB 8.0 pF Transition ferquency fT Delay time td Rise time tr VEB=-0.5V,IC=0,f=1MHZ IC=-10mA,VCE=-20V, f=30MHZ VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA Storage time ts Fall time tf VCC=-3V,VBE=0.5V, IB1=IB2=-1mA 150 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width