MMBTA92

MMBTA92 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -300Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=-300V. Ÿ Collector current IC=-0.3A. Ÿ Transition frequency f T >200MHz @ IC=20mAdc, VCE=-50Vdc, f=100MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2D 3 C 2D 2 1 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage -300 Collector-Emitter Voltage -300 Emitter-Base Voltage -5 Collector Current -0.3 Total Device Dissipation(FR-5 BOARD) 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E MMBTA92 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol Min.Typ.Max. Units IC=-100uA,IE=0 -300 V Collector-Emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150 V Emitter-Base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -5 V Collector cut-off current ICBO VCB=-200V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=-5V,IC=0 HFE IC=-0.1mA,VCE=-10V 40 HFE IC=-1mA,VCE=-10V 70 HFE IC=-10mA,VCE=-10V 100 HFE IC=-20mA,VCE=-10V 60 HFE IC=-50mA,VCE=-10V 30 DC current gain* V(BR)CBO Test Condition Collector-Emitter saturation voltage VCE(SAT) VCE=-200V,IB=0 -0.25 uA -0.25 uA -0.25 uA -0.10 uA 200 IC=-20mA,IB=-2mA -0.2 V IC=-50mA,IB=-10mA -1.6 V IC=-20mA,IB=-2mA -0.9 V IC=-50mA,IB=-10mA -2.6 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=-10V,IE=0,f=1MHZ 5.0 pF Output capacitance COB 8.0 pF Transition ferquency fT Delay time td Rise time tr VEB=-0.5V,IC=0,f=1MHZ IC=-10mA,VCE=-20V, f=100MHZ VCC=-20V,VBE=0.5V, IC=-150mA,IB=-15mA Storage time ts Fall time tf VCC=-6V,VBE=0.5V, IB1=IB2=-15mA 50 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width