S9013

S9013 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 25Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=25V. Ÿ Collector current IC=0.5A. Ÿ Transition frequency f T >150MHz @ IC=20mAdc, VCE=6Vdc, f=30MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: J3 RANK RANGE L 120-200 H 200-350 3 C J3 1 2 B J 300-40 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage 40 Collector-Emitter Voltage 25 Emitter-Base Voltage 5 Collector Current 0.5 Total Device Dissipation 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E S9013 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol V(BR)CBO Test Condition Min. Typ.Max.Units IC=100uA,IE=0 40 V Collector-Emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-Base breakdown voltage V(BR)EBO IE=100uA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=5V,IC=0 DC current gain* HFE IC=50mA,VCE=1V Collector-Emitter saturation voltage VCE(SAT) VCE=20V,IB=0 120 0.1 uA 0.1 uA 0.1 uA 0.1 uA 400 IC=100mA,IB=10mA 0.5 V IC=500mA,IB=50mA 0.6 V IC=100mA,IB=10mA 1.1 V IC=500mA,IB=50mA 1.2 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance C IB VCB=6V,IE=0,f=1MHZ 4.0 pF Output capacitance C OB 8.0 pF Transition ferquency fT Delay time td Rise time tr VEB=0.5V,IC=0,f=1MHZ IC=10mA,VCE=6V, f=30MHZ VCC=3V,VBE=-0.5V, IC=10mA,IB=1mA Storage time ts Fall time tf VCC=3V,VBE=-0.5V, IB1=IB2=1mA 150 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width