SS8550
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 25Volts POWER 300mWatts
FEATURES
PNP epitaxial silicon, planar design.
Collector-emitter voltage VCE=-25V.
Collector current IC=-1.5A.
Transition frequency f T >100MHz @ IC=
50mAdc, VCE=-10Vdc, f=30MHz.
In compliance with ER RoHS 2002/95/EC
directives.
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750,
method 2026
Approx. Weight: 0.008gram
:Marking:Y2
RANK
L
H
J
RANGE
120-200
200-350
300-400
3
C
Y2
1
2
B
E
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Vaule
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1.5
A
PC
Total Device Dissipation
0.3
W
Thermal Resistance Form Junction to Ambient
625
TJ
Junction Temperature
150
O
TSTG
Storage Temperature
-55~+150
O
RθJA
O
C/W
C
C
SS8550
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Collector-Base breakdown voltage
Symbol
Min. Typ.Max.Units
IC=-100uA,IE=0
-40
V
Collector-Emitter breakdown voltage V(BR)CEO
IC=-1mA,IB=0
-25
V
Emitter-Base breakdown voltage
V(BR)EBO
IE=-100uA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V,IC=0
Collector cut-off current
ICEX
Base cut-off current
IBEX
Emitter cut-off current
IEBO
VEB=-5V,IC=0
HFE
IC=-0.1mA,VCE=-1.0V
40
HFE
IC=-1mA,VCE=-1.0V
70
HFE
IC=-100mA,VCE=-1.0V
100
HFE
IC=-400mA,VCE=-1.0V
60
HFE
IC=-800mA,VCE=-1.0V
30
DC current gain*
V(BR)CBO
Test Condition
Collector-Emitter saturation voltage VCE(SAT)
VCE=-20V,IB=0
-0.1
uA
-0.1
uA
-0.1
uA
-0.1
uA
400
IC=-100mA,IB=-10mA
-0.5
V
IC=-800mA,IB=-80mA
-0.6
V
IC=-100mA,IB=-10mA
-1.1
V
IC=-800mA,IB=-80mA
-1.2
V
Base-Emitter Saturation voltage*
VBE(SAT)
Input capacitance
C IB
VCB=-5V,IE=0,f=1MHZ
4.0
pF
Ouput capacitance
C OB
8.0
pF
Transition ferquency
fT
VEB=-0.5V,IC=0,f=1MHZ
IC=-50mA,VCE=-10V,
f=30MHZ
Delay time
td
Rise time
tr
Storage time
ts
Fall time
tf
100
MHZ
VCC=-3V,VBE=0.5V,
IC=-10mA,IB=-1.0mA
35
nS
35
nS
VCC=-3V,VBE=0.5V,
IB1=IB2=-1.0mA
200
nS
50
nS
*Pulse Test: Pulse Width
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