MMBT2222A

MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 75Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Ÿ Collector current IC=0.6A. Ÿ Transition frequency f T >250MHz @ Ÿ IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC Ÿ directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking:1P 3 C 1P B 2 1 E MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Vaule Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 0.6 A PC Total Device Dissipation 0.3 W Thermal Resistance Form Junction to Ambient 416 TJ Junction Temperature 150 O TSTG Storage Temperature -55~+150 O RθJA O C/W C C MMBT2222A ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Symbol Min. Typ.Max.Units IC=100uA,IE=0 75 V Collector-Emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IE=100uA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=4V,IC=0 HFE IC=1mA,VCE=10V 10 HFE IC=0.1mA,VCE=10V 40 HFE IC=150mA,VCE=10V 100 HFE IC=500mA,VCE=10V 40 HFE IC=200mA,VCE=10V 30 DC current gain* V(BR)CBO Test Condition Collector-Emitter saturation voltage VCE(SAT) VCE=60V,IB=0 0.01 uA 0.01 uA 0.1 uA 0.1 uA 300 IC=100mA,IB=10mA 0.2 V IC=500mA,IB=50mA 1 V IC=100mA,IB=10mA 1.1 V IC=500mA,IB=50mA 2 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=6V,IE=0,f=1MHZ 4.0 pF Ouput capacitance COB 8.0 pF Transition ferquency fT VEB=0.5V,IC=0,f=1MHZ IC=20mA,VCE=20V, f=100MHZ Delay time td Rise time tr Storage time ts Fall time tf VCC=30V,VBE=-0.5V, IC=150mA,IB=15mA VCC=30V,VBE=-0.5V, IB1=IB2=15mA 250 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width