S9014

S9014 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 45Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=45V. Ÿ Collector current IC=0.1A. Ÿ Transition frequency f T >150MHz @ IC=10mAdc, VCE=5Vdc, f=30MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: J6 3 C J6 1 2 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage 50 Collector-Emitter Voltage 45 Emitter-Base Voltage 5 Collector Current 0.1 Total Device Dissipation 0.3 Thermal Resistance Form Junction to Ambient 625 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E S9014 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Base cut-off current Emitter cut-off current DC current gain* Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBEX IEBO HFE Collector-Emitter saturation voltage VCE(SAT) Base-Emitter Saturation voltage* VBE(SAT) Input capacitance Output capacitance CIB COB Transition ferquency fT Delay time Rise time Storage time Fall time td tr ts tf Test Condition IC=100uA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=45V,IC=0 Min. Typ.Max.Units 50 45 5 VCE=35V,IB=0 VEB=3V,IC=0 IC=1mA,VCE=5V IC=20mA,IB=1mA IC=100mA,IB=5mA IC=20mA,IB=1mA IC=100mA,IB=5mA VCB=5V,IE=0,f=1MHZ VEB=0.5V,IC=0,f=1MHZ IC=10mA,VCE=5V, f=30MHZ VCC=3V,VBE=-0.5V, IC=10mA,IB=1mA VCC=3V,VBE=-0.5V, IB1=IB2=1mA 200 0.1 0.1 0.1 0.1 600 0.2 0.3 0.85 0.95 4.0 8.0 150 V V V uA uA uA uA V V V V pF pF MHZ 35 35 200 50 nS nS nS nS *Pulse Test: Pulse Width