ES2G

ES2A THRU ES2J HD BK 60 SMBG Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 2A SMBG ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES2X X : From A To J Item Symbol Unit ES2 Test Conditions A B C D G 300 400 Repetitive Peak Reverse Voltage VRRM V 50 100 Maximum RMS Voltage V RMS V 35 70 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, TL=110℃ 2.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 50 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature 150 200 E H J 500 600 105 140 210 280 350 420 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Peak Forward Voltage VF V IF =2.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,Irr=0.25A Peak Reverse Current Thermal Resistance(Typical) IRRM1 μA IRRM2 RθJ-A Test Condition VRM=VRRM ES2 A B C D E 0.95 G 1.25 H J 1.7 35 Ta =25℃ 5.0 Ta =100℃ 100 1) Between junction and ambient 75 Between junction and terminal 20 ℃/W RθJ-L 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)er copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 3.5 50 3.0 8.3ms Single Half Sine Wave 40 2.5 30 2.0 1.5 20 1.0 0 10 60Hz Resistive or Inductive Load P.C.B. Mounted on 0.27"×0.27" (7.0mm×7.0mm)Copper Pad Areas 0.5 50 70 90 110 130 0 150 TL(℃) 1 10 FIG.4：TYPICAL REVERSE CHARACTERISTICS IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 TJ=25℃ Pulse width=300us 1% Duty Cycle ES2A-D 10 100 Number of Cycles 10000 Tj=150℃ 1000 ES2E-G Tj=125℃ Tj=100℃ 100 ES2H-J 1.0 10 0.1 Tj=25℃ 1.0 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF(V) 0 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMBG 0.155(3.94) 0.130(3.30) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.220(5.59) 0.205(5.21) Dimensions in inches and (millimeters) SMBG 4.26 1.8 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMBG G High Diode Semiconductor 4