ES1JT

R ES1AT THRU ES1JT S M E M T O S E I CI C O O N N D D U U C C T O R R Surface Mount Superfast Rectifiers Reverse Voltage – 50 to 600 V PINNING Forward Current – 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Juntion • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: ES1AT~ES1JT: ES1AT~ES1JT Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES1AT ES1BT ES1CT ES1DT ES1ET ES1GT ES1JT Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 30 A Maximum Forward Voltage at 1 A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C 1.25 1 1.7 V IR 5 100 μA Typical Junction Capacitance at V R =4V, f=1MHz Cj 10 pF Maximum Reverse Recovery Time at I F =0.5A, I R =1A, I rr =0.25A t rr 35 ns T j , T stg -55 ~ +150 °C Operating and Storage Temperature Range JINAN JINAN JINGHENG JINGHENG ELECTRONICS ELECTRONICS CO., CO., LTD. LTD. 2-1 3-1 HTTP://WWW.JINGHENG.CN HTTP://WWW.JINGHENG.CN ES1AT THRU ES1JT Surface Mount Superfast Rectifiers Characteristic Curves (TA=25 ℃ unless otherwise noted) Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 1.2 300 1.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 Single phase half wave resistive or inductive P.C.B mounted on 0.315×0. 315"(8.0×8. 0mm ) pad areas 0.2 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 80 60 100 % of PIV.VOLTS Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 14 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 40 20 ES1AT 1.0 ES1ET ES1JT 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 8 6 T J =25°C f = 1.0MHz V sig = 50mV p-p 4 2 0.1 Instaneous Forward Voltage (V) JINAN JINGHENG ELECTRONICS CO., LTD. 12 1 10 100 Reverse Voltage (V) 2-1 3-2 HTTP://WWW.JINGHENG.CN ES1AT THRU ES1JT Surface Mount Superfast Rectifiers PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF FL ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View A C D E e g HE max 1.2 0.23 3.7 2.7 1.6 1.3 4.9 min 0.9 0.18 3.3 2.4 1.3 1.0 4.4 max 47 9.1 146 106 63 51 193 min 35.4 7.1 130 94 51 39 173 UNIT mm g pad e E A pad HE ∠ 7° The recommended mounting pad size Marking Type number 2.8(110) Marking code 1.6(63) 1.8(71) 1.6(63) Unit：mm(mil) JINAN JINGHENG ELECTRONICS CO., LTD. JINAN JINGHENG ELECTRONICS CO., LTD. 3-3 2-1 ES1AT ES1AT ES1BT ES1BT ES1CT ES1CT ES1DT ES1DT ES1ET ES1ET ES1GT ES1GT ES1JT ES1JT HTTP://WWW.JINGHENG.CN HTTP://WWW.JINGHENG.CN